초록 ▼

A foaming process for preparing wafer-level glass micro-cavities that include, etching silicon trenches on a Si wafer through Si micro-machining process; placing high-temperature outgassing agent in the silicon trenches; bonding the Si wafer with a piece of glass wafer by anodic bonding to form seal

A foaming process for preparing wafer-level glass micro-cavities that include, etching silicon trenches on a Si wafer through Si micro-machining process; placing high-temperature outgassing agent in the silicon trenches; bonding the Si wafer with a piece of glass wafer by anodic bonding to form sealing cavities; heating up the bonded wafer, and holding the temperature the high-temperature outgassing agent such that the molten glass corresponding to the sealing cavities deforms and structures corresponding to the silicon trenches are formed in the glass; cooling down to obtain wafer-level glass micro-flow channels.

대표청구항 ▼

1. A foaming process for preparing wafer-level glass micro-cavities, comprising the following steps: step 1: etching silicon trenches with 10-200 μm depth and a depth-width ratio of <2 on a silicon wafer through a silicon micro-machining process,step 2: placing powder of a high-temperature outgassin

1. A foaming process for preparing wafer-level glass micro-cavities, comprising the following steps: step 1: etching silicon trenches with 10-200 μm depth and a depth-width ratio of <2 on a silicon wafer through a silicon micro-machining process,step 2: placing powder of a high-temperature outgassing agent in the silicon trenches,step 3: bonding a piece of Pyrex7740 glass wafer to the silicon wafer by anodic bonding in air or vacuum, such that the silicon trenches form sealing cavities,step 4: heating up in air the silicon wafer bonded with the Pyrex7740 glass wafer to 820° C.-890° C., and holding for 3˜5 min, so that the high-temperature outgassing agent releases gas due to heat and thereby positive pressure inside the sealing cavities is created, and the molten glass corresponding to the sealing cavities deforms and thereby glass micro-cavity structures corresponding to the silicon trenches are formed on the glass wafer, and cooling down to obtain wafer-level glass micro-cavities. 2. The foaming process for preparing wafer-level glass micro-cavities according to claim 1, wherein, the silicon trenches are silicon micro-flow channels, or independent silicon trench arrays, or silicon trench arrays, connected by micro-flow channels. 3. The foaming process for preparing wafer-level glass micro-cavities according to claim 1, wherein, the high-temperature outgassing agent is calcium carbonate, titanium hydride, magnesium carbonate, strontium carbonate, titanium hydride, or zirconium hydride. 4. The foaming process for preparing wafer-level glass micro-cavities according to claim 1, wherein, the silicon trenches have a depth of 50-100 μm and a depth-width ratio of <1. 5. The foaming process for preparing wafer-level glass micro-cavities according to claim 1, wherein, the silicon wafer and Pyrex7740 glass wafer are bonded by anodic bonding under the following process conditions: temperature: 400° C., voltage: 600V. 6. The foaming process for preparing wafer-level glass micro-cavities according to claim 1, wherein, the powder of high-temperature outgassing agent is placed in the silicon trenches by the following method that includes, mixing the high-temperature outgassing agent powder with volatile solvent, adding the mixture of high-temperature outgassing agent powder and volatile solvent into the silicon trenches (4), and then drying the mixture to remove the solvent. 7. The foaming process for preparing wafer-level glass micro-cavities according to claim 6, wherein, the volatile solvent is water or alcohol. 8. The foaming process for preparing wafer-level glass micro-cavities according to claim 1, wherein, the silicon trenches comprise silicon trench arrays connected by micro-flow channels, and the high-temperature outgassing agent is placed in one or more silicon trenches in the arrays. 9. The foaming process for preparing wafer-level glass micro-cavities according to claim 8, wherein, a width of the micro-channels is smaller than a particle diameter of the powder of high-temperature outgassing agent.