Thick-film pastes containing lead-tellurium-boron-oxides, and their use in the manufacture of semiconductor devices
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-031/00
H01L-021/44
H01B-001/02
H01B-001/22
H01L-031/0224
B22F-001/00
B22F-007/04
B22F-007/08
C03C-008/10
C03C-008/12
C04B-035/01
H01B-001/16
H01L-031/18
H01L-031/0264
출원번호
US-0100550
(2011-05-04)
등록번호
US-8895843
(2014-11-25)
발명자
/ 주소
Carroll, Alan Frederick
Hang, Kenneth Warren
Laughlin, Brian J.
Mikeska, Kurt Richard
Torardi, Carmine
Vernooy, Paul Douglas
출원인 / 주소
E I du Pont de Nemours and Company
인용정보
피인용 횟수 :
4인용 특허 :
17
초록
The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal and a lead-tellurium-boron-oxide dispersed in an organic medium.
대표청구항▼
1. A thick-film paste composition for use in forming an electrical connection in a photovoltaic device comprising a semiconductor substrate having at least one insulating layer on a main surface thereof, the composition comprising: a) 85 to 99.5% by weight of an electrically conductive metal or deri
1. A thick-film paste composition for use in forming an electrical connection in a photovoltaic device comprising a semiconductor substrate having at least one insulating layer on a main surface thereof, the composition comprising: a) 85 to 99.5% by weight of an electrically conductive metal or derivative thereof, based on total solids in the composition;b) 0.5 to 15% by weight, based on total solids in the composition, of a lead-tellurium-boron-oxide, wherein the lead-tellurium-boron-oxide comprises 0.25 to 5 wt % B2O3; andc) an organic medium;wherein the thick-film paste, when fired, is capable of penetrating the at least one insulating layer. 2. The thick-film paste of claim 1, wherein the electrically conductive metal comprises silver. 3. The thick-film paste of claim 1, wherein the mole ratio of lead to tellurium of the lead-tellurium-boron-oxide is between 5/95 and 95/5. 4. The thick-film paste of claim 1, wherein the lead-tellurium-boron-oxide comprises: 25-75 wt % PbO,10-70 wt % TeO2,and 0-20.0 wt % of components selected from the group of PbF2, SiO2, Bi2O3, BiF3, Li2O, SnO2, AgO2, ZnO, V2O5, Al2O3, Na2O, TiO2, CuO, ZrO2, and CeO2. 5. The thick-film paste of claim 4, wherein the lead-tellurium-boron-oxide further comprises: 0.1-5 wt % TiO2. 6. The thick-film paste of claim 5, wherein the organic medium further comprises one or more additives selected from the group consisting of solvents, stabilizers, surfactants, and thickeners. 7. The thick-film paste of claim 1, wherein the electrically conductive metal is 90-95 wt % of the solids. 8. The thick-film paste of claim 1, wherein the lead-tellurium-boron-oxide is at least partially crystalline. 9. The thick-film paste of claim 4, further comprising an additive selected from the group consisting of: PbF2, SiO2, Na2O, K2O, Rb2O, Cs2O, Al2O3, MgO, CaO, SrO, BaO, V2O5, ZrO2, MoO3, Mn2O3, Ag2O, ZnO, Ga2O3, GeO2, In2O3, SnO2, Sb2O3, Bi2O3, BiF3, P2O5, CuO, NiO, Cr2O3, Fe2O3, CoO, Co2O3, and CeO2. 10. The thick film paste of claim 1, wherein the lead-tellurium-boron-oxide further comprises oxides of one or more elements selected from the group consisting of: Si, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, V, Zr, Mo, Mn, Zn, B, P, Se, Sn, Ga, Ge, In, Sb, Bi, Ce, Cu, F, Ni, Cr, Fe, Co, and Ag. 11. A process comprising: (a) providing a semiconductor substrate comprising one or more insulating films deposited onto at least one surface of the semiconductor substrate;(b) applying a thick-film paste composition onto at least a portion of the insulating film to form a layered structure, wherein the thick-film paste composition comprises: i) 85 to 99.5% by weight of an electrically conductive metal or derivative thereof, based on total solids in the composition;ii) 0.5 to 15% by weight, based on total solids in the composition, of a lead-tellurium-boron-oxide, wherein the lead-tellurium-boron-oxide comprises 0.25 to 5 wt % B2O3; andiii) an organic medium; and(c) firing the semiconductor substrate, insulating film, and thick-film paste, to form an electrode in contact with the insulating layer and in electrical contact with the semiconductor substrate. 12. The process of claim 11, wherein the thick-film paste composition is applied pattern-wise onto the insulating film. 13. The process of claim 11, wherein the firing is carried out in air or an oxygen-containing atmosphere. 14. The process of claim 11, wherein the thick-film paste composition further comprises: 0.5 to 15% by weight based on solids of a lead-tellurium-lithium-titanium-oxide. 15. An article comprising: (a) a semiconductor substrate;(b) an insulating layer on the semiconductor substrate; and(c) an electrode in contact with the insulating layer and in electrical contact with the semiconductor substrate, the electrode comprising an electrically conductive metal and lead-tellurium-boron-oxide, wherein the lead-tellurium-boron-oxide comprises 0.25 to 5 wt % B2O3. 16. The article of claim 15, wherein the electrode further comprises lithium and titanium. 17. The article of claim 15, wherein the article is a semiconductor device. 18. The article of claim 17, wherein the semiconductor device is a solar cell. 19. The thick-film paste of claim 1, further comprising: 0.5-15% by weight based on solids of a lead-tellurium-lithium-titanium-oxide. 20. The thick-film paste of claim 19, wherein the lead-tellurium-lithium-titanium-oxide comprises: 25-80 wt % PbO,10-65 wt % TeO2,0.1-5 wt % Li2O, and0.1-5 wt % TiO2. 21. The thick-film paste of claim 1, wherein the lead-tellurium-boron-oxide comprises 0.4-5 wt % B2O3. 22. The thick-film paste of claim 1, wherein the lead-tellurium-boron-oxide comprises 0.4-2 wt % B2O3. 23. The process of claim 11, wherein the lead-tellurium-boron-oxide comprises 0.4-5 wt % B2O3. 24. The process of claim 11, wherein the lead-tellurium-boron-oxide comprises 0.4-2 wt % B2O3. 25. The article of claim 15, wherein the lead-tellurium-boron-oxide comprises 0.4-5 wt % B2O3. 26. The article of claim 15, wherein the lead-tellurium-boron-oxide comprises 0.4-2 wt % B2O3.
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