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Disclosed are a method and an apparatus for fabricating solar-grade high purity polycrystalline silicon compacts. Silicon compacts are fabricating by loading polycrystalline silicon powders into a mold without addition of binders in a vacuum atmosphere, and pressurizing and heating the polycrystalli

Disclosed are a method and an apparatus for fabricating solar-grade high purity polycrystalline silicon compacts. Silicon compacts are fabricating by loading polycrystalline silicon powders into a mold without addition of binders in a vacuum atmosphere, and pressurizing and heating the polycrystalline silicon powders. Heating method includes a high-frequency induction heating type, an Ohmic heating type, and a high current supply type.

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1. A method for fabricating silicon compacts, the method comprising: loading silicon powders into a mold in a vacuum atmosphere without adding a binder; andsimultaneously applying pressure and heat to the silicon powders in the mold at a molding pressure of at least 80 MPa and at a molding temperatu

1. A method for fabricating silicon compacts, the method comprising: loading silicon powders into a mold in a vacuum atmosphere without adding a binder; andsimultaneously applying pressure and heat to the silicon powders in the mold at a molding pressure of at least 80 MPa and at a molding temperature of 800° C.-1000° C. to obtain the silicon compacts having a density ratio of at least 60% and an electrical resistivity of at least 4.0 Ω·cm. 2. The method for fabricating silicon compacts according to claim 1, further comprising a pre-treating step of drying the silicon powders in a vacuum atmosphere. 3. The method for fabricating silicon compacts according to claim 1, wherein the silicon powders are polycrystalline silicon powders generated in thermal decomposition processes of silicon containing gases, silicon scraps generated in a semiconductor process, or a mixture of the polycrystalline silicon powders and the silicon scraps. 4. The method for fabricating silicon compacts according to claim 3, wherein the silicon scraps generated in the semiconductor process are scraps generated in a process of fabricating a silicon substrate by slicing a mono/polysilicon ingot. 5. The method for fabricating silicon compacts according to claim 1, wherein the simultaneously applying of the pressure and the heat comprises heating the silicon powders in the mold to be sintered by a high frequency induction heating while applying pressure thereto. 6. The method for fabricating silicon compacts according to claim 1, wherein the pressurizing and heating of the silicon powders comprises heating the silicon powders in the mold to be sintered with an Ohmic heating body while applying pressure thereto. 7. The method for fabricating silicon compacts according to claim 1, wherein the pressurizing and heating of the silicon powders comprises heating the silicon powders in the mold to be sintered by applying electric current to the silicon powders while applying pressure thereto. 8. The method for fabricating silicon compacts according to claim 1, wherein the simultaneously applying of the pressure and the heat is performed at a molding pressure and a molding temperature so as to generate a reaction of reducing oxide existing on a surface of the silicon powders. 9. The method for fabricating silicon compacts according to claim 1, wherein the simultaneously applying of pressure and heat is held at the molding pressure of at least 80 MPa and at the molding temperature of 800° C.-900° C. for a time of at least 180 seconds to obtain the silicon compacts having a bending strength of at least 8 MPa. 10. The method for fabricating silicon compacts according to claim 1, wherein the simultaneously applying of pressure and heat is held at the molding pressure of at least 80 MPa and at the molding temperature of 900° C.-1000° C. for at least 60 seconds to obtain the silicon compacts having the bending strength of at least 8 MPa. 11. The method for fabricating silicon compacts according to claim 1, further comprising removing a contamination layer on a surface part of the silicon compacts by performing an air washing after the simultaneously applying of the pressure and the heat. 12. The method for fabricating silicon compacts according to claim 1, wherein the molding temperature is one selected from the group consisting of 800° C., 900° C., and 1,000° C. 13. The method for fabricating silicon compacts according to claim 12, wherein the molding temperature is 800° C. 14. The method for fabricating silicon compacts according to claim 12, wherein the molding temperature is 900° C. 15. The method for fabricating silicon compacts according to claim 12, wherein the molding temperature is 1,000° C.