Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/02
H01L-021/306
C30B-025/14
C30B-025/16
C30B-029/36
출원번호
US-0682240
(2012-11-20)
등록번호
US-8900979
(2014-12-02)
발명자
/ 주소
Sudarshan, Tangali S.
Song, Haizheng
Rana, Tawhid
출원인 / 주소
University of South Carolina
대리인 / 주소
Dority & Manning, P.A.
인용정보
피인용 횟수 :
2인용 특허 :
6
초록▼
Non-destructive pretreatment methods are generally provided for a surface of a SiC substrate with substantially no degradation of surface morphology thereon. In one particular embodiment, a molten mixture (e.g., including KOH and a buffering agent) is applied directly onto the surface of the SiC sub
Non-destructive pretreatment methods are generally provided for a surface of a SiC substrate with substantially no degradation of surface morphology thereon. In one particular embodiment, a molten mixture (e.g., including KOH and a buffering agent) is applied directly onto the surface of the SiC substrate to form a treated surface thereon. An epitaxial film (e.g., SiC) can then be grown on the treated surface to achieve very high (e.g., up to and including 100%) BPD to TED conversion rate close to the epilayer/substrate interface.
대표청구항▼
1. A non-destructive pretreatment method of a surface of a SiC substrate with substantially no degradation of surface morphology thereon, the method comprising: applying a molten mixture directly onto the surface of the SiC substrate to form a treated surface thereon, wherein the treated surface is
1. A non-destructive pretreatment method of a surface of a SiC substrate with substantially no degradation of surface morphology thereon, the method comprising: applying a molten mixture directly onto the surface of the SiC substrate to form a treated surface thereon, wherein the treated surface is substantially free from etch pits of dislocations thereon, and wherein the molten mixture comprises KOH and a buffering agent, wherein the buffering agent comprises MgO, GaO, or a mixture thereof; andgrowing an epitaxial film on the treated surface. 2. The method as in claim 1, wherein the molten mixture comprises the alkaline earth oxide in an amount of about 5% to about 80% by weight. 3. The method as in claim 1, wherein the molten mixture comprises the alkaline earth oxide in an amount of about 5% to about 20% by weight. 4. The method as in claim 1, wherein the buffering agent comprises MgO. 5. The method as in claim 1, wherein the molten mixture comprises KOH, the buffering agent, and at least one other salt. 6. The method as in claim 5, wherein the at east one other salt comprises NaOH, KNO3, Na2O2, or a mixture thereof. 7. The method as in claim 1, wherein the molten mixture further comprises NaOH. 8. The method as in claim 7, wherein the molten mixture comprises KOH and NaOH in a relative amount of about 1:4 to about 4:1 in terms of weight ratio. 9. The method as in claim 1, wherein the molten mixture further comprises KNO3. 10. The method as in claim 9, wherein the molten mixture comprises KOH and KNO3 in a relative amount of 1:20 to 5:1 in terms of weight ratio. 11. The method as in claim 1, wherein the molten mixture further comprises Na2O2. 12. The method as in claim 1, wherein the molten mixture has a temperature of about 170° C. to about 800° C. when applied onto the SiC substrate, and wherein the molten mixture is a suspension of the buffering agent in the form of a fine powder dispersed in molten KOH liquid. 13. The method as in claim 1, wherein the molten mixture is applied onto the surface of the SiC substrate for a treatment duration that is about 1 minute to about 60 minutes. 14. The method as in claim 1, wherein the epitaxial film grown on the treated surface comprises SiC. 15. The method as in claim 13, wherein the epitaxial growth is achieved via chemical vapor deposition utilizing a Si-source gas and a carbon-source gas. 16. The method as in claim 14, wherein the epitaxial growth is performed in the presence of fluorine. 17. A non-destructive pretreatment method of a surface of a SiC substrate with substantially no degradation of surface morphology thereon, the method comprising: applying a molten mixture onto a buffer epilayer on the surface of the SiC substrate to form a treated surface thereon, wherein the treated surface is substantially free from etch pits of dislocations thereon, and wherein the molten mixture comprises KOH and a buffering agent, wherein the buffering agent comprises MgO, GaO, or a mixture thereof, andgrowing an epitaxial film on the treated surface. 18. The method as in claim 17, further comprising: prior to applying the molten mixture, growing the buffer epilayer on the surface of the SIC substrate, wherein the buffer epilayer comprises SIC. 19. A method of growing a bulk crystal, the method comprising: applying a molten mixture onto the surface of a seed substrate to form a treated surface thereon, wherein the treated surface is substantially free from etch pits of dislocations thereon, and wherein the seed substrate comprises SiC, wherein the molten mixture comprises KOH and a buffering agent, wherein the buffering agent comprises MgO, GaO, or a mixture thereof; andgrowing a bulk crystal on the above treated surface, wherein the bulk crystal comprises SIC.
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이 특허에 인용된 특허 (6)
De Luca Michael A. (Holbrook NY) McCormack John F. (Roslyn Heights NY), Metallization of ceramics.
Sudarshan, Tangali S.; Song, Haizheng; Rana, Tawhid, Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films.
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