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A gate containing ruthenium for a dielectric having an oxide containing a lanthanide and a method of fabricating such a combination gate and dielectric produce a reliable structure for use in a variety of electronic devices. A ruthenium or a conductive ruthenium oxide gate may be formed on a lanthan

A gate containing ruthenium for a dielectric having an oxide containing a lanthanide and a method of fabricating such a combination gate and dielectric produce a reliable structure for use in a variety of electronic devices. A ruthenium or a conductive ruthenium oxide gate may be formed on a lanthanide oxide. A ruthenium-based gate on a lanthanide oxide provides a gate structure that can effectively prevent a reaction between the gate and the lanthanide oxide.

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1. A method of forming an electronic device comprising: forming a dielectric in an integrated circuit, including forming an oxide region, the oxide region formed by one or more cycles of a monolayer or partial monolayer sequencing process, each of the one or more cycles including pulsing hydrogen in

1. A method of forming an electronic device comprising: forming a dielectric in an integrated circuit, including forming an oxide region, the oxide region formed by one or more cycles of a monolayer or partial monolayer sequencing process, each of the one or more cycles including pulsing hydrogen into a reaction chamber containing a substrate on which the integrated circuit is being formed while pulsing a precursor containing a lanthanide such that a lanthanide oxide is formed in each of the one or more cycles, the hydrogen being different from the precursor containing the lanthanide; andforming a conductive material contacting the dielectric, the conductive material containing ruthenium. 2. The method of claim 1, wherein the method includes shaping the conductive material by reactive ion etching in a CHF3 +O2 mixture gas ambient. 3. The method of claim 1, wherein the method includes: forming metallization lines to a device containing the dielectric; andannealing the device in a H2 ambient after forming the metallization lines. 4. The method of claim 1, wherein the hydrogen includes H2. 5. The method of claim 1, wherein the method includes using water vapor as a precursor acting as a reactant to form the lanthanide oxide. 6. The method of claim 1, wherein forming the conductive material contacting the dielectric includes forming the conductive material substantially of ruthenium. 7. The method of claim 6, wherein forming the conductive material substantially of ruthenium includes forming by evaporation, sputtering, chemical vapor deposition, or metalorganic chemical vapor deposition. 8. The method of claim 1, wherein forming the conductive material contacting the dielectric includes forming ruthenium oxide. 9. The method of claim 8, wherein forming ruthenium oxide includes forming the ruthenium oxide by evaporation, sputtering, chemical vapor deposition, or metalorganic chemical vapor deposition. 10. The method of claim 1, wherein forming the dielectric includes forming a non-lanthanide oxide. 11. The method of claim 1, wherein forming the dielectric includes forming the dielectric with a nanolaminate structure. 12. The method of claim 11, wherein forming the dielectric with a nanolaminate structure includes forming dielectric layers in addition to the oxide region. 13. The method of claim 1, wherein forming the dielectric includes forming the dielectric having one or more of an insulative metal oxide other than an oxide containing a lanthanide or a non-metal containing dielectric. 14. A method of forming an electronic device comprising: forming a dielectric in an integrated circuit, including forming an oxide region, the oxide region formed by one or more cycles of a monolayer or partial monolayer sequencing process, each of the one or more cycles including pulsing hydrogen into a reaction chamber containing a substrate on which the integrated circuit is being formed while pulsing a precursor containing a lanthanide such that a lanthanide oxide is formed in each of the one or more cycles, wherein forming the oxide region includes forming the oxide region containing at least two different lanthanides; andforming a conductive material contacting the dielectric, the conductive material containing ruthenium. 15. The method of claim 14, wherein forming the oxide region containing at least two different lanthanides includes forming lanthanum oxide as one of the at least two different lanthanides. 16. The method of claim 14, wherein forming the conductive material contacting the dielectric includes forming the conductive material such that ruthenium material of the conductive material contacts the lanthanide oxide. 17. The method of claim 16, wherein the ruthenium material includes one or more of ruthenium metal or conductive ruthenium oxide. 18. The method of claim 14, wherein forming the dielectric includes forming the dielectric with a nanolaminate structure having material compositions to match a selected dielectric constant. 19. The method of claim 18, wherein forming the dielectric includes forming the dielectric in a flash memory device. 20. The method of claim 14, wherein forming the dielectric includes forming the dielectric with a nanolaminate structure including lanthanum and praseodymium.