Semiconductor substrate and method for manufacturing the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-027/12
H01L-027/112
H01L-029/66
출원번호
US-0792158
(2010-06-02)
등록번호
US-8912624
(2014-12-16)
우선권정보
JP-2007-162106 (2007-06-20)
발명자
/ 주소
Kakehata, Tetsuya
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson, Eric J.
인용정보
피인용 횟수 :
0인용 특허 :
23
초록▼
A semiconductor device and a method for manufacturing thereof are provided. The method includes a step of forming a first insulating film containing silicon and oxygen as its composition over a single-crystal semiconductor substrate, a step of forming a second insulating film containing silicon and
A semiconductor device and a method for manufacturing thereof are provided. The method includes a step of forming a first insulating film containing silicon and oxygen as its composition over a single-crystal semiconductor substrate, a step of forming a second insulating film containing silicon and nitrogen as its composition over the first insulating film, a step of irradiating the second insulating film with first ions to form a separation layer in the single-crystal semiconductor substrate, a step of irradiating the second insulating film with second ions so that halogen is contained in the first insulating film, and a step of performing heat treatment to separate the single-crystal semiconductor substrate with a single-crystal semiconductor film left over the supporting substrate.
대표청구항▼
1. A semiconductor substrate comprising: a single-crystal semiconductor film containing halogen;a first insulating film overlapped with the single-crystal semiconductor film, the first insulating film comprising silicon and oxygen as its composition and containing halogen;a second insulating film ov
1. A semiconductor substrate comprising: a single-crystal semiconductor film containing halogen;a first insulating film overlapped with the single-crystal semiconductor film, the first insulating film comprising silicon and oxygen as its composition and containing halogen;a second insulating film overlapped with the first insulating film, the second insulating film comprising silicon and nitrogen as its composition;a first bonding layer overlapped with the second insulating film, the first bonding layer having siloxane bonds;a barrier film overlapped with the first bonding layer, the barrier film comprising one selected from the group consisting of a stacked film of a silicon nitride film and a silicon oxide film, a stacked film of a silicon nitride film and a silicon oxynitride film, a stacked film of a silicon nitride oxide film and a silicon oxide film and a stacked film of a silicon nitride oxide film and a silicon oxynitride film; anda supporting substrate overlapped with the barrier film,wherein dangling bonds of the single-crystal semiconductor film at an interface between the single-crystal semiconductor film and the first insulating film are terminated by halogen diffused from the first insulating film. 2. The semiconductor substrate according to claim 1, wherein the first insulating film is a thermal oxide film. 3. The semiconductor substrate according to claim 1, wherein the first insulating film is a silicon oxide film or a silicon oxynitride film. 4. The semiconductor substrate according to claim 1, wherein the second insulating film is a silicon nitride film or a silicon nitride oxide film. 5. The semiconductor substrate according to claim 1, wherein the halogen is fluorine or chlorine. 6. The semiconductor substrate according to claim 1, wherein the supporting substrate is one selected from the group consisting of a glass substrate, a quartz substrate, a ceramic substrate, a sapphire substrate, and a metal substrate whose surface is coated with an insulating film. 7. The semiconductor substrate according to claim 1, wherein a second bonding layer is provided between the barrier film and the first bonding layer. 8. A semiconductor device comprising: a barrier film over a substrate, the barrier film comprising one selected from the group consisting of a stacked film of a silicon nitride film and a silicon oxide film, a stacked film of a silicon nitride film and a silicon oxynitride film, a stacked film of a silicon nitride oxide film and a silicon oxide film and a stacked film of a silicon nitride oxide film and a silicon oxynitride film;a first bonding layer over the barrier film, the first bonding layer having siloxane bonds;a first insulating film over the first bonding layer a substrate, the first insulating film comprising silicon and nitrogen as its composition;a second insulating film over the first insulating film, the second insulating film comprising silicon and oxygen as its composition and containing halogen;a single-crystal semiconductor film over the second insulating film, the single-crystal semiconductor film containing halogen;a third insulating film over the single-crystal semiconductor film; anda gate electrode over the third insulating film, the gate electrode overlapping with the single-crystal semiconductor film,wherein dangling bonds of the single-crystal semiconductor film at an interface between the single-crystal semiconductor film and the second insulating film are terminated by halogen diffused from the second insulating film. 9. The semiconductor device according to claim 8, wherein the second insulating film is a thermal oxide film. 10. The semiconductor device according to claim 8, wherein the second insulating film is a silicon oxide film or a silicon oxynitride film. 11. The semiconductor device according to claim 8, wherein the first insulating film is a silicon nitride film or a silicon nitride oxide film. 12. The semiconductor device according to claim 8, wherein the halogen is fluorine or chlorine. 13. The semiconductor device according to claim 8, wherein the substrate is one selected from the group consisting of a glass substrate, a quartz substrate, a ceramic substrate, a sapphire substrate, and a metal substrate whose surface is coated with an insulating film. 14. The semiconductor device according to claim 8, further comprising a second bonding layer, wherein the second bonding layer is provided between the barrier film and the first bonding layer.
Hiroji Aga JP; Naoto Tate JP; Kiyoshi Mitani JP, Method of Fabricating SOI wafer by hydrogen ION delamination method and SOI wafer fabricated by the method.
Yasukawa, Masahiro, SOI SUBSTRATE, ELEMENT SUBSTRATE, SEMICONDUCTOR DEVICE, ELECTRO-OPTICAL APPARATUS, ELECTRONIC EQUIPMENT, METHOD OF MANUFACTURING THE SOI SUBSTRATE, METHOD OF MANUFACTURING THE ELEMENT SUBSTRATE, AND .
Yasukawa,Masahiro, SOI substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the SOI substrate, method of manufacturing the element substrate, and .
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