Deposition of amorphous silicon-containing films
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/36
C30B-029/06
H01L-021/02
C23C-016/32
C30B-025/02
C23C-016/24
출원번호
US-0626730
(2007-01-24)
등록번호
US-8921205
(2014-12-30)
발명자
/ 주소
Todd, Michael A.
출원인 / 주소
ASM America, Inc.
대리인 / 주소
Knobbe, Martens, Olson & Bear, LLP
인용정보
피인용 횟수 :
5인용 특허 :
203
초록▼
Chemical vapor deposition methods are used to deposit amorphous silicon-containing films over various substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher man
Chemical vapor deposition methods are used to deposit amorphous silicon-containing films over various substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Preferably, the deposited amorphous silicon-containing film is annealed to produce crystalline regions over all or part of an underlying substrate.
대표청구항▼
1. A deposition method comprising: depositing an amorphous Si-containing film onto an exposed single crystal surface of a mixed substrate at a rate of about 20 Å per minute or higher using a feed gas that comprises trisilane, wherein the amorphous Si-containing film has a thickness non-uniformity th
1. A deposition method comprising: depositing an amorphous Si-containing film onto an exposed single crystal surface of a mixed substrate at a rate of about 20 Å per minute or higher using a feed gas that comprises trisilane, wherein the amorphous Si-containing film has a thickness non-uniformity that is about 20% or less across its surface over the mixed substrate; andannealing the amorphous Si-containing film to form a crystalline Si-containing film that comprises a single crystal region. 2. The method of claim 1 in which the crystalline Si-containing film is an epitaxial crystalline film. 3. The method of claim 1 in which the crystalline Si-containing film further comprises a polycrystalline region. 4. The method of claim 1 in which the depositing is conducted at a temperature in the range of about 350° C. to about 500° C. 5. The method of claim 1 in which the annealing is conducted at a temperature in the range of about 500° C. to about 1100° C. 6. The method of claim 1 in which the depositing is conducted at a temperature in the range of about 350° C. to about 500° C. and the annealing is conducted at a temperature in the range of about 500° C. to about 750° C. 7. The method of claim 6 in which the substrate is crystalline. 8. The method of claim 1 in which the crystalline Si-containing film is selected from the group consisting of silicon, doped silicon, SiC, doped SiC, SiGe, doped SiGe, SiGeC, and doped SiGeC. 9. The method of claim 1, further comprising depositing a SiGe film onto the crystalline Si-containing film. 10. The method of claim 9 in which the SiGe film comprises a dopant. 11. The method of claim 1 in which the feed gas further comprises a precursor selected from the group consisting of a germanium source, a silicon source, a carbon source, a boron source, a gallium source, an indium source, an arsenic source, a phosphorous source, an antimony source, a nitrogen source and an oxygen source. 12. The method of claim 11 in which the precursor is a silicon source selected from the group consisting of silane and disilane. 13. The method of claim 1, wherein the mixed substrate comprises the single crystal surface and a surface that is not single crystal. 14. The method of claim 1, wherein the mixed substrate comprises a surface that is epitaxial and a surface that is not epitaxial. 15. The method of claim 1, wherein the mixed substrate comprises a surface that is amorphous and a surface that is not amorphous. 16. The method of claim 1, wherein the thickness non-uniformity is about 15% or less. 17. The method of claim 1, wherein thickness non-uniformity is about 10% or less. 18. The method of claim 1, wherein the thickness non-uniformity is about 8% or less. 19. The method of claim 1, wherein the thickness non-uniformity is about 6% or less. 20. The method of claim 1, wherein the thickness non-uniformity is about 4% or less. 21. The method of claim 1, wherein the rate is about 50 Å per minute or higher. 22. The method of claim 1, wherein the depositing occurs in a chamber, and the chamber comprises a total pressure in the range of about 1 Torr to about 350 Torr. 23. The method of claim 1, wherein the depositing occurs in a chamber, and the chamber comprises a total pressure in the range of about 1 Torr to about 100 Torr. 24. The method of claim 22, wherein trisilane comprises a partial pressure in the range of about 0.0001% to about 100% of the total pressure in the chamber. 25. The method of claim 22, wherein trisilane comprises a partial pressure in the range of about 0.001% to about 50% of the total pressure in the chamber.
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