|국가/구분||United States(US) Patent 등록|
|국제특허분류(IPC7판)||D02G-003/16 C04B-035/00 C04B-035/622 B82Y-030/00 C01B-031/36 C04B-035/565 C04B-035/571 C04B-035/573 C04B-035/80|
|미국특허분류(USC)||428/398; 428/367; 428/368; 428/375; 428/389; 428/293.4; 428/294.1; 501/095.1; 501/095.2; 501/095.3|
|발명자 / 주소|
|출원인 / 주소|
|대리인 / 주소||
|인용정보||피인용 횟수 : 6 인용 특허 : 40|
Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500° C. to approximately 2000° C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01×102 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.
1. A silicon carbide fiber comprising filaments comprising alpha silicon carbide surrounding a hollow core. 2. The silicon carbide fiber of claim 1, wherein the alpha silicon carbide is substantially free of beta silicon carbide. 3. The silicon carbide fiber of claim 1, wherein the filaments have a diameter of from approximately 1 μm to approximately 100 μm. 4. The silicon carbide fiber of claim 1, wherein the filaments have a diameter of from approximately 2 μm to approximately 20 μm. 5. The silicon carbide fiber of claim 1, wherein the filaments have a...