A method of forming an epitaxial SiC film on SiC substrates in a warm wall CVD system, wherein the susceptor is actively heated and the ceiling and sidewall are not actively heated, but are allowed to be indirectly heated by the susceptor. The method includes a first process of reaction cell prepara
A method of forming an epitaxial SiC film on SiC substrates in a warm wall CVD system, wherein the susceptor is actively heated and the ceiling and sidewall are not actively heated, but are allowed to be indirectly heated by the susceptor. The method includes a first process of reaction cell preparation and a second process of epitaxial film growth. The epitaxial growth is performed by flowing parallel to the surface of the wafers a gas mixture of hydrogen, silicon and carbon gases, at total gas velocity in a range 120 to 250 cm/sec.
대표청구항▼
1. A method of manufacturing a 4H-SiC epiwafer comprising an epitaxial SiC film on a single-crystal 4H-SiC substrate, the method comprising: a. loading the single-crystal 4H-SiC substrate onto a susceptor in a reaction cell of a warm wall CVD system;b. heating the system by controlling a temperature
1. A method of manufacturing a 4H-SiC epiwafer comprising an epitaxial SiC film on a single-crystal 4H-SiC substrate, the method comprising: a. loading the single-crystal 4H-SiC substrate onto a susceptor in a reaction cell of a warm wall CVD system;b. heating the system by controlling a temperature of the susceptor in the reaction cell to a range from 1500° C. to 1620° C. while establishing a temperature gradient from a surface of the epiwafer to a ceiling of the reaction cell in a range from 25° C./cm to 80° C./cm; andc. executing a manufacturing run to produce the 4H-SiC epiwafer, the manufacturing run comprising supplying a gas flow parallel to a surface of the single-crystal 4H-SiC substrate, such that a total gas velocity is in a range from 120 to 250 cm/sec and controlling a pressure inside the reaction cell to a range from 100 to 150 mbar, wherein the gas flow comprises a mixture of hydrogen gas, silicon gas, and carbon gas, in order to produce the epitaxial SiC film on the single-crystal 4H-SiC substrate. 2. The method of claim 1, wherein the single-crystal 4H-SiC substrate comprises a polished 4H-SiC wafer with a diameter ranging from 100 to 200 mm and having a nitrogen concentration of at least 1×1018/cm3. 3. The method of claim 1, wherein the epitaxial SiC film is deposited on an exposed silicon surface of the single-crystal 4H-SiC substrate. 4. The method of claim 1, wherein the epitaxial SiC film is deposited on an exposed carbon surface of the single-crystal 4H-SiC substrate. 5. The method of claim 1, wherein in step (a), a plurality of single-crystal 4H-SiC substrates are placed in the reaction cell. 6. A method of manufacturing a 4H-SiC epiwafer comprising an epitaxial SiC filer on a single-crystal 4H-SiC substrate, the method comprising: a. loading the single-crystal 4H-SiC substrate onto a susceptor in a reaction cell of a warm wall CVD system;b. heating the system by controlling a temperature of the susceptor in the reaction cell to a range from 1500° C. to 1620° C.; andc. executing a manufacturing run to produce the 4H-SiC epiwafer, the manufacturing run comprising supplying a gas flow parallel to a surface of the single-crystal 4H-SiC substrate, such that a total gas velocity is in a range from 120 to 250 cm/sec and controlling a pressure inside the reaction cell to a range from 100 to 150 mbar, wherein the gas flow comprises a mixture of hydrogen gas, silicon gas, and carbon gas, in order to produce the epitaxial SiC film on the single-crystal 4H-SiC substrate; and,further comprising:d. measuring performance metrics of the 4H-SiC epiwafer; ande. removing the used reaction cell when the measured performance metrics of the 4H-SiC epiwafer fall below acceptable threshold limits. 7. A method of manufacturing a 4H-SiC epiwafer comprising an epitaxial SiC film on a single-crystal 4H-SiC substrate, the method comprising: a. loading the single-crystal 4H-SiC substrate onto a susceptor in a reaction cell of a warm wall CVD system:b. heating the system by controlling a temperature of the susceptor in the reaction cell to a range from 1500° C. to 1620° C.; andc. executing a manufacturing run to produce the 4H-SiC epiwafer, the manufacturing run comprising supplying a gas flow parallel to a surface of the single-crystal 4H-SiC substrate, such that a total gas velocity is in a range from 120 to 250 cm/sec and controlling a pressure inside the reaction cell to a range from 100 to 150 mbar, wherein the gas flow comprises a mixture of hydrogen gas, silicon gas, and carbon gas, in order to produce the epitaxial SiC film on the single-crystal 4H-SiC substrate;wherein step (a) is preceded by pre-treating the reaction cell, the pre-treating comprising:a. loading a sacrificial substrate onto the susceptor in the reaction cell;b. sealing and evacuating the reaction cell;c. purging the reaction cell using inert and hydrogen gases;d. baking the reaction cell at a temperature in the range 1400° C. to 1700° C. while flowing hydrogen gas mixed with 1% to 10% hydrocarbon gas;e. performing a CVD deposition process so as to deposit an SiC film on the sidewall and ceiling of the reaction cell; andf. removing the sacrificial substrate from the reaction cell. 8. A method of manufacturing a 4H-SiC epiwafer comprising an epitaxial SiC film on a single-crystal 4H-SiC substrate, the method comprising: a, loading the single-crystal 4H-SiC substrate onto a susceptor in a reaction cell of a warm wall CVD system;b. heating the system by controlling a temperature of the susceptor in the reaction cell to a range from 1500° C. to 1620° C.; andc. executing a manufacturing run to produce the 4H-SiC epiwafer, the manufacturing run comprising supplying a gas flow parallel to a surface of the single-crystal 4H-SiC substrate, such that a total gas velocity is in a range from 120 to 250 cm/sec and controlling a pressure inside the reaction cell to a range from 100 to 150 mbar, wherein the gas flow comprises a mixture of hydrogen gas, silicon gas, and carbon gas, in order to produce the epitaxial SiC film on the single-crystal 4H-SiC substrate;wherein step (c) comprises:a. placing the single-crystal 4H-SiC substrate on the susceptor in the reaction cell of the warm wall CVD system;b. evacuating the reaction cell and then purging the reaction cell with argon;c. terminating the argon flow and initiating hydrogen gas flow into the reaction cell;d. establishing the temperature gradient from the surface of the epiwafer to a ceiling of the reaction cell in the range from 25° C./cm to 80° C./cm;e. flowing parallel to the surface of the epiwafer a gas mixture of hydrogen, silicon and carbon gases, at a total gas velocity of 120 to 250 cm/sec;f. maintaining the process conditions to achieve a total deposit of from 3 to 120 μm of film on the single-crystal 4H-SiC substrate in order to produce the epitaxial SiC film on the single-crystal 4H-SiC substrate;g. cooling the system to a temperature less than 300° C.; andh. removing the single-crystal 4H-SiC substrate. 9. The method of claim 8, wherein the gas flow further comprises doping gas. 10. The method of claim 8, further comprising flowing an etching gas mixture into the reaction cell to etch the single-crystal 4H-SiC substrate prior to step 5(e). 11. The method of claim 10, wherein the etching gas mixture comprises a halogen gas and hydrogen. 12. A method of manufacturing a 4H-SiC epiwafer comprising an epitaxial SiC film on a single-crystal 4H-SiC substrate, the method comprising: a. loading the single-crystal 4H-SiC substrate onto a susceptor in a reaction cell of a warm wall CVD system;b. heating the system by controlling a temperature of the susceptor in the reaction cell to a range from 1500° C. to 1620° C.; andc. executing a manufacturing run to produce the 4H-SiC epiwafer, the manufacturing run comprising supplying a gas flow parallel to a surface of the single-crystal 4H-SiC substrate, such that a total gas velocity is in a range from 120 to 250 cm/sec and controlling a pressure inside the reaction cell to a range from 100 to 150 mbar, wherein the gas flow comprises a mixture of hydrogen gas, silicon gas, and carbon gas, in order to produce the epitaxial SiC film on the single-crystal 4H-SiC substrate;wherein the reaction cell comprises a graphite reaction cell, and further comprises coating the reaction cell's graphite components with pyrocarbon or tantalum carbide films prior to assembling the cell for use in CVD epitaxy. 13. A single-crystal 4H-SiC substrate with epitaxial SiC film produced by the method comprising: a. loading the sing1e-crystal 4H-SiC substrate a e onto a susceptor in a reaction cell of a warm wall CVD system;b. heating the system by controlling a temperature of the susceptor in the reaction cell to a range from 1500′C. to 1620° C.; andc. executing a manufacturing run to produce the 4H-SiC epiwafer, the manufacturing run comprising supplying a gas flow parallel to a surface of the single-crystal 4H-SiC substrate, such that a total gas velocity is in a range from 120 to 250 cm/sec and controlling a pressure inside the reaction cell to a range from 100 to 150 mbar, wherein the gas flow comprises a mixture of hydrogen gas, silicon gas, and carbon gas, in order to produce the epitaxial SiC film on the single-crystal 4H-SiC substrate; wherein,a. a within wafer total thickness variation of the epitaxial SiC film is from 2 to 12%, inclusive;b. a within wafer dopant concentration variation of the epitaxial SiC film is from 5 to 40%, inclusive;c. a top surface of the epitaxial SiC film has an RMS roughness value of 0.2 to 2 nm; inclusive; andd. a density of surface defects on the epitaxial SiC film is from 0.25 to 2.0/cm2, inclusive. 14. A method of forming a 4H-SiC epiwafer comprising an epitaxial SiC film on a single-crystal 4H-SiC substrate positioned on a susceptor in a warm wall CVD system, the warm wall CVD system having a reaction cell comprising the susceptor positioned at a bottom, a sidewall, and a ceiling, wherein the susceptor is actively heated, and the ceiling and sidewall are not actively heated, but are allowed to be indirectly heated by the susceptor, the method comprising: a. inserting an unused reaction cell assembly into a CVD epitaxy system;b. a first process for treatment of the reaction cell preparation; andc. a second process for epitaxial film growth; wherein: the first process for treatment of the reaction cell preparation comprises the steps: i. loading the susceptor with a sacrificial substrate;ii. sealing and evacuating the reaction cell;iii. purging the reaction cell using argon and hydrogen gases;iv. baking the reaction cell in a mixture of hydrogen and hydrocarbon gas; andv. performing a CVD deposition process so as to deposit an SiC film on the sidewall and ceiling of the reaction cell; and the second process for epitaxial film growth comprises the steps: vi. allowing the reaction cell to cool;vii. placing the single-crystal 4H-SiC substrate on the susceptor;viii. evacuating and then purging the reaction cell with argon gas;ix. heating the susceptor to a temperature of 1200° C. to 1400° C., inclusive;x. terminating the argon flow and initiating hydrogen gas flow into the reaction cell;xi. flowing parallel to the surface of the wafers a gas mixture of hydrogen, silicon and carbon gases, at a total gas velocity of 120 to 250 cm/sec;xii. maintaining a temperature of the susceptor at 1500° C. to 1620° C.; andxiii. controlling a pressure inside the reaction cell at from 100 to 150 mbar, inclusive, to achieve a total deposit of 3 to 120 μm of film on the substrate. 15. The method of claim 14, wherein the step of baking the unused reaction cell comprises heating the reaction cell to a temperature of from 1400° C. to 1700° C. and maintaining the temperature for from 4 to 24 hours. 16. The method of claim 14, wherein during the first process for treatment of the reaction cell preparation. a ratio of volumetric flow of carbon to silicon gases, taken as the ratio of (number of C atoms in precursor molecule)×(carbon volume flow)/(silicon volume flow) is less than 1, but greater than 0.05. 17. The method of claim 14, wherein the temperature of the susceptor, the total gas velocity, and a throttle setting of the reaction cell are controlled so as to maintain a temperature gradient from the substrate to the ceiling in a range from 25° C./cm to 80° C./cm. 18. The method of claim 14, wherein the total gas velocity is maintained at 120 to 160 cm/sec, inclusive. 19. The method of claim 14, wherein the total gas velocity is maintained at 175 to 250 cm/sec, inclusive. 20. The method of claim 14, wherein a plurality of single-crystal 4H-SiC substrates are placed in the reaction cell.
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