Light-emitting element, light-emitting device, electronic device, and method for fabricating light-emitting element
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-051/50
H01L-051/52
H01L-027/32
H01L-051/00
출원번호
US-0584116
(2012-08-13)
등록번호
US-8941301
(2015-01-27)
우선권정보
JP-2007-170319 (2007-06-28)
발명자
/ 주소
Ibe, Takahiro
Ikeda, Hisao
Koezuka, Junichi
Kato, Kaoru
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson, Eric J.
인용정보
피인용 횟수 :
5인용 특허 :
128
초록▼
Objects of the present invention are to provide a light-emitting element that does not readily deteriorate, a light-emitting device and an electronic device that do not readily deteriorate, and a method of fabricating the light-emitting element that does not readily deteriorate. A light-emitting ele
Objects of the present invention are to provide a light-emitting element that does not readily deteriorate, a light-emitting device and an electronic device that do not readily deteriorate, and a method of fabricating the light-emitting element that does not readily deteriorate. A light-emitting element having an EL layer between a pair of electrodes is covered with a layer containing an inorganic compound and halogen atoms or a layer containing an organic compound, an inorganic compound, and halogen atoms, whereby deterioration by moisture penetration can be inhibited. Thus, a light-emitting element with a long life can be obtained.
대표청구항▼
1. A method of fabricating a light-emitting element, comprising the steps of: forming a first electrode;forming an EL layer over the first electrode;forming a second electrode over the EL layer;forming a layer containing an organic compound and an inorganic compound over the second electrode; andadd
1. A method of fabricating a light-emitting element, comprising the steps of: forming a first electrode;forming an EL layer over the first electrode;forming a second electrode over the EL layer;forming a layer containing an organic compound and an inorganic compound over the second electrode; andadding halogen atoms to the layer containing the organic compound and the inorganic compound by ion implantation, thereby forming a first sealing layer containing the organic compound, the inorganic compound, and the halogen atoms. 2. The method of fabricating the light-emitting element according to claim 1, wherein the organic compound is any of an aromatic amine compound, a carbazole derivative, an aromatic hydrocarbon, and a polymer compound. 3. The method of fabricating the light-emitting element according to claim 1, wherein the inorganic compound is any of vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide. 4. The method of fabricating the light-emitting element according to claim 1, wherein the halogen atoms are fluorine atoms. 5. The method of fabricating the light-emitting element according to claim 1, wherein a concentration of the halogen atoms is greater than or equal to 1×1020 atoms/cm3 and less than or equal to 1×1021 atoms/cm3. 6. A method of fabricating a light-emitting element, comprising the steps of: forming a first electrode;forming an EL layer over the first electrode;forming a second electrode over the EL layer;forming a layer containing an organic compound and an inorganic compound over the second electrode;adding halogen atoms to the layer containing the organic compound and the inorganic compound by ion implantation, thereby forming a first sealing layer containing the organic compound, the inorganic compound, and the halogen atoms over the second electrode; andforming a second sealing layer over the first sealing layer by one of a plasma CVD method, a sputtering method, and a vacuum evaporation method. 7. The method of fabricating the light-emitting element according to claim 6, wherein the organic compound is any of an aromatic amine compound, a carbazole derivative, an aromatic hydrocarbon, and a polymer compound. 8. The method of fabricating the light-emitting element according to claim 6, wherein the inorganic compound is any of vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide. 9. The method of fabricating the light-emitting element according to claim 6, wherein the halogen atoms are fluorine atoms. 10. The method of fabricating the light-emitting element according to claim 6, wherein a concentration of the halogen atoms is greater than or equal to 1×1020 atoms/cm3 and less than or equal to 1×1021 atoms/cm3. 11. A light-emitting device comprising: a wiring over a first substrate;a first electrode over the first substrate;an insulator over the first electrode;an EL layer over the insulator;a second electrode over the EL layer;a first sealing layer comprising an organic compound over the second electrode;a sealing material over and in contact with the wiring; anda second substrate attached to the first substrate by the sealing material,wherein the first sealing layer covers the insulator and the second electrode, andwherein the organic compound is capable of being used for a composite material which can be used for the EL layer. 12. The light-emitting device according to claim 11, wherein the wiring is in contact with the first sealing layer. 13. The light-emitting device according to claim 11, wherein the organic compound is a carbazole derivative or an aromatic hydrocarbon. 14. The light-emitting device according to claim 11, wherein the first sealing layer further comprises a molybdenum oxide. 15. The light-emitting device according to claim 11, wherein the first sealing layer further comprises halogen atoms. 16. The light-emitting device according to claim 11, wherein the sealing material comprises an epoxy-based resin. 17. The light-emitting device according to claim 11, further comprising a second sealing layer over the first sealing layer, wherein the second sealing layer comprises an inorganic material, andwherein the inorganic material is any of silicon nitride, silicon nitride oxide, silicon oxide, aluminum oxide, aluminum nitride, aluminum nitride oxide, and diamond-like carbon (DLC). 18. A display device comprising the light-emitting device according to claim 11. 19. A lighting device comprising the light-emitting device according to claim 11. 20. An electronic device comprising the light-emitting device according to claim 11. 21. The light-emitting device according to claim 11, wherein the EL layer comprises a hole-injecting layer, andwherein the organic compound is contained in the hole-injecting layer.
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