Methods for forming conductive titanium oxide thin films
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C23C-016/00
C23C-016/06
C23C-016/40
C23C-016/455
H01G-004/12
H01G-004/33
H01L-049/02
출원번호
US-0129609
(2008-05-29)
등록번호
US-8945675
(2015-02-03)
발명자
/ 주소
Pore, Viljami
Ritala, Mikko
Leskelä, Markku
출원인 / 주소
ASM International N.V.
대리인 / 주소
Knobbe, Martens, Olson & Bear, LLP
인용정보
피인용 횟수 :
2인용 특허 :
33
초록▼
The present disclosure relates to the deposition of conductive titanium oxide films by atomic layer deposition processes. Amorphous doped titanium oxide films are deposited by ALD processes comprising titanium oxide deposition cycles and dopant oxide deposition cycles and are subsequently annealed t
The present disclosure relates to the deposition of conductive titanium oxide films by atomic layer deposition processes. Amorphous doped titanium oxide films are deposited by ALD processes comprising titanium oxide deposition cycles and dopant oxide deposition cycles and are subsequently annealed to produce a conductive crystalline anatase film. Doped titanium oxide films may also be deposited by first depositing a doped titanium nitride thin film by ALD processes comprising titanium nitride deposition cycles and dopant nitride deposition cycles and subsequently oxidizing the nitride film to form a doped titanium oxide film. The doped titanium oxide films may be used, for example, in capacitor structures.
대표청구항▼
1. A process for producing a doped titanium oxide thin film on a substrate in a reaction chamber by atomic layer deposition, the process comprising: a titanium oxide deposition cycle comprising:providing a vapor phase reactant pulse comprising a titanium precursor into the reaction chamber to form n
1. A process for producing a doped titanium oxide thin film on a substrate in a reaction chamber by atomic layer deposition, the process comprising: a titanium oxide deposition cycle comprising:providing a vapor phase reactant pulse comprising a titanium precursor into the reaction chamber to form no more than about a single molecular layer of the titanium precursor on the substrate;removing excess reactant from the reaction chamber, if any;providing a vapor phase reactant pulse comprising an oxygen precursor to the reaction chamber such that the oxygen precursor reacts with the titanium precursor on the substrate;removing excess second reactant and any reaction byproducts from the reaction chamber; anda dopant oxide deposition cycle comprising:providing a vapor phase reactant pulse comprising a niobium or tantalum precursor to the reaction chamber;removing excess reactant from the reaction chamber;providing a vapor phase reactant pulse comprising an oxygen precursor to the reaction chamber such that the oxygen precursor reacts with the niobium or tantalum precursor on the substrate;removing excess reactant and any reaction byproducts from the reaction chamber; wherein the titanium oxide cycle and dopant oxide cycles are repeated until a thin film of a desired thickness and composition comprising Ti1−xNbxOy or Ti1−xTaxOy is obtained, wherein x is between 0 and 1, wherein y is about 2;wherein the doped titanium oxide thin film is electrically conductive; andwherein the doped titanium oxide thin film is in direct contact with a dielectric layer in a semiconductor device. 2. The method of claim 1, wherein the oxygen source comprises one or more of water, ozone, H2O2, alcohol, atomic oxygen, oxygen radicals and oxygen plasma. 3. The method of claim 1, wherein the niobium source comprises Nb(OEt)5. 4. The method of claim 1, wherein the tantalum source comprises Ta(OEt)5. 5. The method of claim 1, wherein the Nb or Ta x value is between about 0.01 and about 0.5. 6. The method of claim 1, wherein the Nb or Ta x value is between about 0.20 and about 0.35. 7. The method of claim 1, wherein the Nb x value is about 0.31. 8. The method of claim 1, wherein the thin film has a thickness between about 2 nm and about 200 nm. 9. The method of claim 1, wherein the substrate temperature is between about 200° C. and about 350° C. during the providing and removing steps. 10. The method of claim 1, wherein the substrate temperature is between about 200° C. and about 250° C. during the providing and removing steps. 11. The method of claim 1, further comprising annealing the thin film by heating the substrate. 12. The method of claim 11, wherein when annealing the substrate is heated to a temperature above 500° C. 13. The method of claim 11, wherein when annealing the substrate is heated to a temperature above 600° C. 14. The method of claim 11, further comprising providing a reducing gas mixture during annealing. 15. The method of claim 11, further comprising providing hydrogen gas during annealing. 16. The method of claim 11, wherein the annealing step thereby produces an anatase crystalline thin film. 17. The method of claim 11, wherein the thin film has a resistivity less than about 0.01Ω-cm. 18. The method of claim 11, wherein the thin film has a resistivity less than about 0.005Ω-cm. 19. The method of claim 11 wherein the thin film produced thereby has an optical transmittance of greater than about 60% in the visible region. 20. The method of claim 1, wherein a high-k structure is deposited directly over and contacting the thin film. 21. The method of claim 20, wherein the high-k structure comprises titanium. 22. The method of claim 20, wherein the high-k layer comprises one or more of PbTiO3, PbZrxTi1−xO3, SrTiO3, BaTiO3, SrBaTiO3, BiTaOx and SrBiTaOx. 23. The method of claim 20, further comprising depositing a conductive doped titanium oxide thin film on the high-k structure. 24. The method of claim 23, wherein the high-k layer includes titanium. 25. The method of claim 23, wherein the high-k layer comprises one or more of PbTiO3, PbZrxTi1−xO3, SrTiO3, BaTiO3, SrBaTiO3, BiTaOx and SrBiTaOx. 26. The method of claim 1, wherein the Ti1−xNbxOy or Ti1−xTaxOy thin film is conductive. 27. The method of claim 1, wherein the niobium or tantalum precursor comprises an organic ligand.
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