Metal oxide protective layer for a semiconductor device
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/316
H01L-029/78
출원번호
US-0439528
(2012-04-04)
등록번호
US-8946830
(2015-02-03)
발명자
/ 주소
Jung, Sung-Hoon
출원인 / 주소
ASM IP Holdings B.V.
대리인 / 주소
Snell & Wilmer LLP
인용정보
피인용 횟수 :
49인용 특허 :
126
초록▼
Embodiments related to metal oxide protective layers formed on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor are provided. In one example, a method for forming a metal oxide protective layer is provided. The example meth
Embodiments related to metal oxide protective layers formed on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor are provided. In one example, a method for forming a metal oxide protective layer is provided. The example method includes forming a metal-including active species on the halogen-sensitive metal-including layer, the metal-including active species being derived from a non-halogenated metal oxide precursor. The example method also includes reacting an oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer.
대표청구항▼
1. A method of forming a metal oxide protective layer on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor, the method comprising: forming a metal-including active species on the halogen-sensitive metal-including layer, the
1. A method of forming a metal oxide protective layer on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor, the method comprising: forming a metal-including active species on the halogen-sensitive metal-including layer, the metal-including active species being derived from a non-halogenated metal oxide precursor,reacting an oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer; andforming a metal-including film comprising material selected from the group consisting of a metal-including dielectric material and a metal-including barrier material and comprising residual halogen atoms on top of the metal oxide protective layer by exposing the metal oxide protective layer to a halogen-including metal compound. 2. The method of claim 1, where the halogen-sensitive metal-including layer comprises an alkaline earth metal-including metal oxide. 3. The method of claim 1, wherein the metal oxide protecting layer comprises TiO2. 4. The method of claim 1, where the metal-including film includes oxygen or nitrogen. 5. The method of claim 1, where the halogen-including metal compound includes a transition metal. 6. The method of claim 1, where the oxygen-containing reactant is selected from the group consisting of O2, O3, and H2O, and where the non-halogenated metal oxide precursor is selected from the group consisting of metal alkoxides, metal amino complexes, metal silanes, and metal cyclopentadiene complexes. 7. The method of claim 1, further comprising depositing the metal oxide protective layer as a film having a thickness of 20 Å or less. 8. The method of claim 1, further comprising: after forming the metal-including active species on the halogen-sensitive metal-including layer, removing the non-halogenated metal oxide precursor from the reactor; andafter removing the non-halogenated metal oxide precursor from the reactor, supplying the oxygen-containing reactant to the halogen-sensitive metal-including layer so that the metal-including active species reacts with the oxygen-containing reactant. 9. The method of claim 1, where the halogen-sensitive metal-including layer is sensitive to chlorine and where the non-halogenated metal oxide precursor comprises a non-chlorinated metal oxide precursor. 10. A method of fabricating a semiconductor device, comprising: forming a halogen-sensitive high-K dielectric material on a substrate;forming a metal oxide protective layer on the halogen-sensitive high-K dielectric material by reacting a metal-including active species derived from a non-halogenated metal oxide precursor with an oxygen-containing reactant; andforming a metal-including film comprising material selected from the group consisting of a metal-including dielectric material and a metal-including barrier material and comprising residual halogen atoms on the metal oxide protective layer by exposing the metal oxide protective layer to a halogen-including metal compound. 11. The method of claim 10, where forming the metal oxide protective layer comprises, in a reactor for processing a substrate: forming the metal-including active species from a non-halogenated metal oxide precursor on the halogen-sensitive high-K dielectric material;after forming the metal-including active species on the halogen-sensitive high-K dielectric material, removing the non-halogenated metal oxide precursor from the reactor;after removing the non-halogenated metal oxide precursor from the reactor, supplying the oxygen-containing reactant to the exposed surface; andreacting the oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer. 12. The method of claim 10, where the halogen-sensitive high-K dielectric material comprises an alkaline earth metal-including metal oxide and where the metal-including film includes oxygen or nitrogen. 13. The method of claim 10, where the halogen-including metal compound includes a transition metal. 14. The method of claim 10, where the oxygen-containing reactant is selected from the group consisting of O2, O3, and H2O, and where the non-halogenated metal oxide precursor is a non-chlorinated metal oxide precursor selected from the group consisting of metal alkoxides, metal amino complexes, metal silanes, and metal cyclopentadiene complexes. 15. The method of claim 10, where forming the metal oxide protective layer on the halogen-sensitive high-K dielectric material comprises forming the metal oxide comprising TiO2. 16. A gate assembly for a semiconductor device, comprising: a first dielectric layer comprising a halogen-sensitive high-K dielectric material;a metal oxide protective layer formed on top of the halogen-sensitive high-K dielectric material; anda film comprising material selected from the group consisting of a metal-including dielectric material and a metal-including barrier material and comprising residual halogen atoms formed on top of the metal oxide protective layer. 17. The device of claim 16, where the film comprising residual halogen atoms comprises a metal-including film formed on top of the metal oxide protective layer via reaction of a halogen-including metal compound. 18. The device of claim 17, where the film comprising residual halogen atoms comprises a transition metal compound. 19. The device of claim 16, where the halogen-sensitive high-K dielectric material comprises an alkaline earth metal-including metal oxide. 20. The device of claim 16, where the metal oxide protective layer comprising TiO2.
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