Dielectrics containing at least one of a refractory metal or a non-refractory metal
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/20
H01L-021/02
출원번호
US-0323780
(2014-07-03)
등록번호
US-8951880
(2015-02-10)
발명자
/ 주소
Forbes, Leonard
Ahn, Kie Y.
Bhattacharyya, Arup
출원인 / 주소
Micron Technology, Inc.
대리인 / 주소
Schwegman Lundberg & Woessner, P.A.
인용정보
피인용 횟수 :
0인용 특허 :
215
초록▼
Electronic apparatus and methods of forming the electronic apparatus may include one or more insulator layers having a refractory metal and a non-refractory metal for use in a variety of electronic systems and devices. Embodiments can include electronic apparatus and methods of forming the electroni
Electronic apparatus and methods of forming the electronic apparatus may include one or more insulator layers having a refractory metal and a non-refractory metal for use in a variety of electronic systems and devices. Embodiments can include electronic apparatus and methods of forming the electronic apparatus having a tantalum aluminum oxynitride film. The tantalum aluminum oxynitride film may be structured as one or more monolayers. The tantalum aluminum oxynitride film may be formed using atomic layer deposition. Metal electrodes may be disposed on a dielectric containing a tantalum aluminum oxynitride film.
대표청구항▼
1. A method of making an integrated circuit device, the method comprising: forming a compound of tantalum including oxygen or nitrogen using a monolayer sequencing process;forming a compound of aluminum including oxygen or nitrogen using the monolayer sequencing process; andprocessing the compound o
1. A method of making an integrated circuit device, the method comprising: forming a compound of tantalum including oxygen or nitrogen using a monolayer sequencing process;forming a compound of aluminum including oxygen or nitrogen using the monolayer sequencing process; andprocessing the compound of tantalum and the compound of aluminum together forming tantalum aluminum oxynitride. 2. The method of claim 1, wherein processing the compound of tantalum and the compound of aluminum together includes: forming tantalum aluminum oxide; andperforming a nitridization of the tantalum aluminum oxide. 3. The method of claim 2, wherein performing the nitridization includes introducing nitrogen using a microwave plasma or introducing nitrogen using a NH3 anneal. 4. The method of claim 1, wherein forming the compound of tantalum includes forming tantalum nitride; forming the compound of aluminum includes forming aluminum nitride; and processing the compound of tantalum and the compound of aluminum together includes annealing and oxidizing the tantalum nitride and the aluminum nitride together. 5. The method of claim 4, wherein oxidizing the tantalum nitride and aluminum nitride includes oxidizing by a rapid thermal oxidation. 6. The method of claim 1, wherein forming the compound of tantalum includes forming tantalum oxynitride; forming the compound of aluminum includes forming aluminum oxynitride; processing the compound of tantalum and the compound of aluminum together includes reacting the tantalum oxynitride and the aluminum oxynitride together. 7. The method of claim 6, wherein the tantalum oxynitride and the aluminum oxynitride are formed in alternating layers and annealed. 8. The method of claim 1, wherein the method includes forming the tantalum aluminum oxynitride in a dielectric stack, the dielectric stack having dielectrics other than tantalum aluminum oxynitride. 9. The method of claim 8, wherein the dielectric stack is a dielectric nanolaminate. 10. The method of claim 9, wherein the a dielectric nanolaminate includes silicon oxide formed as a charge storage region. 11. A method of making an integrated circuit device, the method comprising: forming a dielectric including tantalum aluminum oxynitride, the tantalum aluminum oxynitride formed by: forming a compound of tantalum including oxygen or nitrogen using a monolayer sequencing process;forming a compound of aluminum including oxygen or nitrogen using the monolayer sequencing process; andprocessing the compound of tantalum and the compound of aluminum together forming tantalum aluminum oxynitride; andforming a metal electrode on and contacting the dielectric, the metal electrode formed by: forming a substitutable material on the dielectric; andsubstituting a desired metal material for the substitutable material to provide the metal electrode on the dielectric. 12. The method of claim 11, wherein the substitutable material includes one or more materials selected from a group including carbon, polysilicon, germanium, and silicon-germanium. 13. The method of claim 11, wherein substituting the desired metal material includes forming the desired metal material on the substitutable material and heating the desired metal material and the substitutable material at a temperature below the eutectic temperature of the desired metal material. 14. The method of claim 11, wherein substituting the desired metal material for the substitutable material includes substituting, with the substitutable material being a carbon structure, one or more materials from the group including gold, silver, a gold alloy, a silver alloy, copper, platinum, rhenium, ruthenium, rhodium, nickel, osmium, palladium, iridium, and cobalt. 15. The method of claim 11, wherein substituting the desired metal material for the substitutable material includes substituting one or more materials from a group including aluminum, copper, silver, gold, and alloys of silver and gold. 16. A method of making an integrated circuit device, the method comprising: forming a dielectric including tantalum aluminum oxynitride, the tantalum aluminum oxynitride formed by: forming a compound of tantalum including oxygen or nitrogen using a monolayer sequencing process;forming a compound of aluminum including oxygen or nitrogen using the monolayer sequencing process; andprocessing the compound of tantalum and the compound of aluminum together forming tantalum aluminum oxynitride; andforming a self aligned metal electrode on and contacting the dielectric using previously disposed sacrificial carbon on the dielectric. 17. The method of claim 16, wherein the method includes using previously disposed sacrificial carbon sidewall spacers adjacent to the sacrificial carbon. 18. The method of claim 17, wherein the method includes replacing the sacrificial carbon sidewall spacers with non-carbon sidewall spacers. 19. The method of claim 16, wherein the method includes performing a plasma oxidation process to remove the previously disposed sacrificial carbon and replacing the previously disposed sacrificial carbon with a desired metal material for the self aligned metal electrode. 20. The method of claim 16, wherein the method includes replacing the previously disposed sacrificial carbon with a desired metal material for the self aligned metal electrode, the desired metal material being one or more materials from a group including aluminum, tungsten, molybdenum, gold, alloys of gold, silver, alloys of silver, platinum, rhenium, ruthenium, rhodium, nickel, osmium, palladium, iridium, cobalt, and germanium.
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