Method and device for producing material having a monocrystalline or multicrystalline structure
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C30B-015/02
C30B-015/14
C30B-015/08
C30B-028/10
출원번호
US-0110478
(2012-03-21)
등록번호
US-8956454
(2015-02-17)
우선권정보
DE-10 2011 007 149 (2011-04-11)
국제출원번호
PCT/EP2012/054963
(2012-03-21)
§371/§102 date
20131021
(20131021)
국제공개번호
WO2012/139865
(2012-10-18)
발명자
/ 주소
Köckeis, Rupert
출원인 / 주소
Streicher Maschinenbau GmbH & Co. KG
대리인 / 주소
Boyle Fredrickson S.C.
인용정보
피인용 횟수 :
0인용 특허 :
6
초록▼
According to the invention, a device and a method for producing materials having a monocrystalline or multicrystalline structure are provided, in which a container is arranged between two pressure regions and the setting of the height of the melt in the container takes place via the setting of the d
According to the invention, a device and a method for producing materials having a monocrystalline or multicrystalline structure are provided, in which a container is arranged between two pressure regions and the setting of the height of the melt in the container takes place via the setting of the differential pressure between the pressure regions. As a result, even particulate material can be fed continuously to the container and melted uniformly. Delivery material with high purity can also be pulled out of the container.
대표청구항▼
1. A method for producing material having a monocrystalline or multicrystalline structure, with the steps: a) introduction of the particulate material mixture into an inlet of a container configured as a crucible,b) heating of the material mixture in the melting zone of the container by means of an
1. A method for producing material having a monocrystalline or multicrystalline structure, with the steps: a) introduction of the particulate material mixture into an inlet of a container configured as a crucible,b) heating of the material mixture in the melting zone of the container by means of an induction coil, in order to provide a melt of the material mixture, the container being designed conically in order to ensure a subsequent flow of the melt of the material mixture toward an outlet of the container, and the induction coil being arranged outside the container and serving to surround the container essentially in the form of a ring in the conical container portion, the material mixture in the melting zone of the container being supported statically via a pressure difference between the inlet and the outlet of the container, the pressure difference being proportional to the height of the melt, the static support taking place between two chambers which are separated by the container and between which the pressure difference prevails, either each of the chambers being regulated separately in terms of pressure or these chambers being connected to one another by regulation of the pressure differencec) contacting the material mixture, in the melting zone, with an inoculating crystal, at or adjacent to the outlet of the container; andd) pulling of the material mixture out of the melting zone in order to form the monocrystalline or multicrystalline structure. 2. A device for producing material having a monocrystalline or multicrystalline structure, with: a container which is designed as a crucible and has an inlet, via which a particulate material mixture can be introduced, and which is designed conically, in order to ensure a subsequent flow of a melt of the material mixture toward an outlet of the container,a heating arrangement, by means of which the material mixture can be heated in a melting zone of the container by means of an induction coil, which is arranged outside the container and serves to surround the container essentially in the form of a ring in the conical container portion, in order to provide a melt of the material mixture,a pressure generation arrangement for generating a pressure difference between the inlet and the outlet of the container, via which pressure difference the material mixture can be supported statically in the melting zone of the container, the pressure difference being proportional to the height of the melt, the static support taking place between two chambers which are separated by the container and between which the pressure difference prevails, either each of the chambers being regulated separately in terms of pressure or these chambers being connected to one another by the regulation of pressure difference; andan inoculant, via which the material mixture can be contacted at or adjacent to an outlet of the container and via which the material mixture can be pulled out of the melting zone in order to form the monocrystalline of multicrystalline structure. 3. The device as claimed in claim 2, the material being a semiconducting material, a connecting semiconductor and/or a metal alloy. 4. The device as claimed in claim 2, the measurement of the volume of the material in the container taking place via the measurement of the diameter of the material in the container, so that a camera arrangement can be used for the volume measurement. 5. A method for producing material having a monocrystalline and multicrystalline structure, with the steps: a) introduction of the particulate material mixture into an inlet of a container configured as a crucible,b) heating of the material mixture in the melting zone of the container by means of an induction coil, in order to provide a melt of the material mixture, the container being designed conically in order to ensure a subsequent flow of the melt of the material mixture toward an outlet of the container, and the induction coil being arranged outside the container and serving to surround the container essentially in the form of a ring in the conical container portion, the material mixture in the melting zone of the container being supported statically via a pressure difference between the inlet and the outlet of the container, the pressure difference being proportional to the height of the melt, the static support taking place between two chambers which are separated by the container and between which the pressure difference prevails, either each of the chambers being regulated separately in terms of pressure or these chambers being connected to one another by regulation of the pressure difference;c) contacting of the material mixture, preferably in the melting zone, with an inoculant, preferably an inoculating crystal, at or adjacent to the outlet of the container; andd) pulling of the inoculating crystal out of the melting zone in order to form a monocrystalline semiconducting silicon rod. 6. A device for producing material having a monocrystalline or multicrystalline structure, with: a container which is designed as a crucible and has an inlet, via which a particulate material mixture can be introduced, and which is designed conically, in order to ensure a subsequent flow of a melt of the material mixture toward an outlet of the container,a heating arrangement, by means of which the material mixture can be heated in a melting zone of the container by means of an induction coil, which is arranged outside the container and serves to surround the container essentially in the form of a ring in the conical container portion, in order to provide a melt of the material mixture,a pressure generation arrangement for generating a pressure difference between the inlet and the outlet of the container, via which pressure difference the material mixture can be supported statically in the melting zone of the container, the pressure difference being proportional to the height of the melt, the static support taking place between two chambers which are separated by the container and between which the pressure difference prevails, either each of the chambers being regulated separately in terms of pressure or these chambers being connected to one another by the regulation of pressure difference; andan inoculant, via which the material mixture in the form of semiconductor material, preferably in the melting zone, can be contacted at or adjacent to an outlet of the container and via which semiconductor material can be pulled out of the melting zone.
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이 특허에 인용된 특허 (6)
Kunihiko Nagai JP; Kohei Kodaira JP; Hiroyuki Tanaka JP; Hideki Sakamoto JP, Apparatus and method for manufacturing monocrystals.
Frosch Robert A. Administrator of the National Aeronautics and Space Administration ; with respect to an invention of ( Florham Park NJ) Berkman Samuel (Florham Park NJ) Kim Kyong-Min (E. Windsor NJ), Means for growing ribbon crystals without subjecting the crystals to thermal shock-induced strains.
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