초록 ▼

A thermal processing system and method for curing a dielectric film. The thermal processing system is configured to treat the dielectric film with ultraviolet (UV) radiation and infrared (IR) radiation in order to cure the dielectric film. The thermal processing system can include an array if IR and

A thermal processing system and method for curing a dielectric film. The thermal processing system is configured to treat the dielectric film with ultraviolet (UV) radiation and infrared (IR) radiation in order to cure the dielectric film. The thermal processing system can include an array if IR and UV light-emitting devices (LEDs) configured to irradiate a substrate having a low dielectric constant (low-k) film. The method dries the dielectric film to remove contaminants from the film and exposes the dielectric film at a single stage to ultraviolet radiation and IR radiation.

대표청구항 ▼

1. A processing system for treating a low K dielectric film on a substrate, comprising: a process chamber configured to facilitate said treatment process;a substrate holder coupled to said process chamber, and configured to support said substrate in said process chamber;a temperature control system

1. A processing system for treating a low K dielectric film on a substrate, comprising: a process chamber configured to facilitate said treatment process;a substrate holder coupled to said process chamber, and configured to support said substrate in said process chamber;a temperature control system coupled to said substrate holder and configured to elevate a temperature of said substrate;a multi-spectrum radiation source disposed inside said process chamber, and configured to directly irradiate said low K dielectric film on the substrate with infrared (IR) radiation and ultraviolet (UV) radiation,said multi-spectrum radiation source including; an IR radiation source configured to emit IR light ranging from approximately 8 microns to approximately 14 microns, anda UV radiation source configured to emit UV light ranging from approximately 100 nm to approximately 400 nm;said IR radiation source and said UV radiation source configured to concurrently expose the low K dielectric film;a vacuum pumping system coupled to said process chamber, and configured to evacuate said process chamber; anda processor having program instructions to selectively control both the IR radiation source and the UV radiation source so that the low K dielectric film having a dielectric constant less than 2.5 on the substrate in the process chamber is exposed to multi-spectrum radiation from the IR radiation source and the UV radiation source and so that different wavelengths of different energy levels are 1) available at different stages of a radiation treatment of the low K dielectric film with exposure of the low K dielectric film to the UV radiation source occurring with exposure of the low K dielectric film to the IR radiation source and 2) both radiate the low K dielectric film to cumulatively cure the dielectric film. 2. The system of claim 1, wherein said IR radiation source comprises a first array of IR sources and said UV radiation source comprises a second array of UV sources arranged in a rectangular pattern above said substrate. 3. The system of claim 1, wherein said IR radiation source comprises a first array of IR sources and said UV radiation source comprises a second array of UV sources arranged in a circular pattern above said substrate. 4. The system of claim 1, wherein said IR radiation source comprises a first array of IR sources and said UV radiation source comprises a second array of UV sources configured to emit light that substantially covers said substrate. 5. The system of claim 1, wherein said IR radiation source comprises a first array of IR sources and said UV radiation source comprises a second array of UV sources configured to emit light that partially covers said substrate. 6. The system of claim 1, wherein said substrate holder comprises a rotatable substrate holder configured to rotate said substrate about an axis perpendicular to the substrate plane. 7. The system of claim 1, wherein said UV radiation source comprises UV LEDs. 8. The system of claim 1, wherein said temperature control system comprises a resistive heating element coupled to said substrate holder. 9. The system of claim 8, wherein said temperature control system is configured to elevate the temperature of said substrate from approximately 200° C. to approximately 400° C. 10. The system of claim 1, further comprising: a gas supply system coupled to said process chamber, and configured to introduce a process gas to said process chamber. 11. The system of claim 10, wherein said gas supply system is configured to supply an inert gas to said process chamber. 12. The system of claim 10, wherein said gas supply system is configured to supply a reactive gas to said process chamber. 13. The system of claim 10, wherein said gas supply system is configured to introduce said process gas to said process chamber such that a substantially parallel flow of process gas over said substrate is created. 14. The system of claim 1, further comprising: a remote plasma source coupled to said process chamber, and configured to introduce plasma radicals to said process chamber. 15. The system of claim 1, further comprising: an inner liner coupled to an interior surface of said process chamber and configured to reduce contamination of said substrate. 16. The system of claim 15, wherein said inner liner is fabricated from one or more of quartz, silicon, silicon nitride, silicon carbide, sapphire, alumina, aluminum nitride, carbon, anodized aluminum, or coated aluminum, or a combination of two or more thereof. 17. The system of claim 1, further comprising: a drying chamber coupled by a transfer mechanism to the processing chamber. 18. The system of claim 17, further comprising: a transfer chamber configured to transfer the substrate from the process chamber to the drying chamber. 19. The system of claim 17, further comprising: a measurement apparatus coupled to said drying chamber, and configured to monitor a level of reduction of contaminants in said dielectric film on said substrate. 20. The system of claim 19, wherein said measurement apparatus comprises an apparatus configured to perform Fourier transform infrared spectroscopy or mass spectroscopy.