초록 ▼

Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystallin

Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.

대표청구항 ▼

1. A substantially closed-loop process for producing polycrystalline silicon, the process comprising: introducing trichlorosilane into a disproportionation system to produce silicon tetrachloride and silane, the disproportionation system comprising a first distillation column, a second distillation

1. A substantially closed-loop process for producing polycrystalline silicon, the process comprising: introducing trichlorosilane into a disproportionation system to produce silicon tetrachloride and silane, the disproportionation system comprising a first distillation column, a second distillation column, a third distillation column, a first disproportionation reactor and a second disproportionation reactor, wherein: trichlorosilane and silicon tetrachloride produced from the chlorination reactor and dichlorosilane produced from the first disproportionation reactor are introduced into the first distillation column to separate silicon tetrachloride into a bottoms fraction and to separate dichlorosilane and trichlorosilane into an overhead fraction;the overhead fraction produced from the first distillation column is introduced into the second distillation column to separate trichlorosilane into a bottoms fraction and dichlorosilane into an overhead fraction;the bottoms fraction produced from the second distillation column is introduced into the first disproportionation reactor to produce a first disproportionation reactor product gas comprising dichlorosilane and silicon tetrachloride, the first disproportionation reactor product gas being introduced into the first distillation column;the overhead fraction produced from the second distillation column is introduced into the second disproportionation reactor to produce a second disproportionation reactor product gas comprising silane and trichlorosilane;the second disproportionation reactor product gas is introduced into the third distillation column to separate silane into an overhead fraction and trichlorosilane into a bottoms fraction; andthe bottoms fraction produced from the third distillation column is introduced into the second distillation column;introducing the overhead fraction produced from the disproportionation system into a fluidized bed reactor to produce polycrystalline silicon and an effluent gas comprising hydrogen and unreacted silane, the overhead fraction comprising silane;introducing an amount of silicon tetrachloride produced from the disproportionation system and an amount of hydrogen from the effluent gas into a hydrogenation reactor to produce trichlorosilane and hydrogen chloride;introducing an amount of hydrogen chloride produced from the hydrogenation reactor and silicon into a chlorination reactor to produce a chlorinated gas comprising trichlorosilane and silicon tetrachloride; andintroducing trichlorosilane produced from the chlorination reactor to the disproportionation system to produce silicon tetrachloride and silane. 2. The process as set forth in claim 1 wherein the bottoms fraction produced from the first distillation column is introduced into the hydrogenation reactor to produce trichlorosilane and hydrogen chloride. 3. The process as set forth in claim 1 wherein silicon tetrachloride and hydrogen are introduced into the hydrogenation reactor to produce a hydrogenated gas comprising trichlorosilane, hydrogen chloride, unreacted hydrogen and unreacted silicon tetrachloride, the hydrogenated gas being introduced into a separation system to separate trichlorosilane and unreacted silicon tetrachloride from hydrogen and unreacted hydrogen chloride, the trichlorosilane and unreacted silicon tetrachloride being introduced into the disproportionation system. 4. The process as set forth in claim 3 wherein the separation system comprises: a chlorosilane separator for separating trichlorosilane and silicon tetrachloride from hydrogen and hydrogen chloride; anda hydrogen separator for separating hydrogen from hydrogen chloride, the separated hydrogen chloride being introduced into the chlorination reactor, the separated hydrogen being introduced into at least one of the hydrogenation reactor and the fluidized bed reactor. 5. The process as set forth in claim 3 wherein the chlorosilane separator is a vapor-liquid separator. 6. The process as set forth in claim 3 wherein the hydrogen separator is a vapor-liquid separator or a bubbler. 7. The process as set forth in claim 3 wherein the chlorinated gas comprises trichlorosilane, silicon tetrachloride, hydrogen and unreacted hydrogen chloride and wherein the chlorinated gas is introduced into the separation system. 8. The process as set forth in claim 1 wherein the chlorinated gas is introduced into a stripper column to remove light end impurities prior to introduction into the disproportionation system. 9. The process as set forth in claim 1 wherein the molar ratio of hydrogen chloride added as a make-up to the amount of hydrogen chloride circulating within the substantially closed-loop process is less than about 1:10. 10. The process as set forth in claim 1 wherein the molar ratio of hydrogen gas added as a make-up to the amount of hydrogen circulating in the substantially closed-loop process is less than about 1:10. 11. The process as set forth in claim 1 comprising adding chlorine as a make-up, wherein the molar ratio of chlorine added as a make-up to polycrystalline silicon product that is produced is less than about 2.1. 12. The process as set forth in claim 1 wherein the molar ratio of hydrogen added as a make-up to polycrystalline silicon product that is produced is less than about 1.1.