White light devices using non-polar or semipolar gallium containing materials and phosphors
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-033/00
H01L-033/50
H01L-033/32
H01L-033/16
H01L-033/54
H01L-033/58
출원번호
US-0035693
(2013-09-24)
등록번호
US-8956894
(2015-02-17)
발명자
/ 주소
Raring, James W.
Hall, Eric M.
D'Evelyn, Mark P.
출원인 / 주소
Soraa, Inc.
대리인 / 주소
Kilpatrick Townsend & Stockton LLP
인용정보
피인용 횟수 :
0인용 특허 :
123
초록▼
A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The light emitting diodes emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phospho
A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The light emitting diodes emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength.
대표청구항▼
1. A method for fabricating a light emitting diode device comprising: providing a substrate member comprising a first surface region;providing one or more light emitting diode devices overlying the first surface region, at least one of the light emitting diode devices being fabricated on a semipolar
1. A method for fabricating a light emitting diode device comprising: providing a substrate member comprising a first surface region;providing one or more light emitting diode devices overlying the first surface region, at least one of the light emitting diode devices being fabricated on a semipolar or nonpolar GaN containing device substrate, the device substrate comprising a bulk gallium nitride substrate, the at least one or more light emitting diode devices fabricated on the semipolar or nonpolar GaN containing device substrate emitting substantially polarized emission of one or more first wavelengths;coupling an optically transparent member to the one or more light emitting diode devices such that an optical path is provided between the one or more light emitting diode devices and the optically transparent member; andforming a thickness of one or more entities formed within a vicinity of the optically transparent member, one or more of the entities being excited by the substantially polarized emission to emit electromagnetic radiation at one or more second wavelengths;wherein the bulk gallium nitride substrate has a dislocation density in the plane of the large-area surface that is less than 5×106 cm−2. 2. The method of claim 1, wherein at least one of the light emitting diode devices comprises a quantum well region, the quantum well region being characterized by an electron wave function and a hole wave function, the electron wave function and the hole wave function being substantially overlapped within a predetermined spatial region of the quantum well region. 3. The method of claim 1, wherein the thickness of the one or more entities is formed overlying a first side of the optically transparent member, the first side facing the one or more of the light emitting diode devices. 4. The method of claim 1, wherein the one or more light emitting diode devices comprise at least a blue LED device, the substantially polarized emission being blue light. 5. The method of claim 1, wherein the one or more light emitting diode devices comprise at least a blue LED device capable of emitting electromagnetic radiation at a wavelength range from about 430 nanometers to about 490 nanometers, the substantially polarized emission being blue light. 6. The method of claim 1, wherein the one or more light emitting diode devices comprise at least a blue LED device capable of emitting electromagnetic radiation at a range from about 430 nanometers to about 490 nanometers and the one or more entities is capable of emitting substantially yellow light, the substantially polarized emission being blue light. 7. The method of claim 6, wherein the one or more entities comprises a phosphor or phosphor blend selected from one or more of (Y, Gd, Tb, Sc, Lu, La)3(Al, Ga, In)5O12:Ce3+, SrGa2S4:Eu2+, SrS:Eu2+, and colloidal quantum dot thin films comprising CdTe, ZnS, ZnSe, ZnTe, CdSe, or CdTe. 8. The method of claim 6, further comprising a phosphor capable of emitting substantially red light, wherein the phosphor is selected from one or more of the group consisting of (Gd,Y,Lu,La)2O3:Eu3+, Bi3+; (Gd,Y,Lu,La)2O2S:Eu3+, Bi3+; (Gd,Y,Lu,La)VO4:Eu3+, Bi3+; Y2(O,S)3: Eu3+; Ca1-xMo1-ySiyO4: where 0.05≦x≦0.5, 0≦y≦0.1; (Li,Na,K)5Eu(W,Mo)O4; (Ca,Sr)S:Eu2+; SrY2S4:Eu2+; CaLa2S4:Ce3+; (Ca,Sr)S:Eu2+; 3.5MgO*0.5MgF2*GeO2:Mn4+ (MFG); (Ba,Sr,Ca)MgxP2O7:Eu2+, Mn2+; (Y,Lu)2WO6:Eu3+, Mo6+; (Ba,Sr,Ca)3MgxSi2O8:Eu2+, Mn2+, wherein 1
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