Alkaline plating bath for electroless deposition of cobalt alloys
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C23C-018/34
C23C-018/36
C23C-018/50
C23C-018/16
출원번호
US-0376657
(2013-01-09)
등록번호
US-8961670
(2015-02-24)
우선권정보
EP-12159365 (2012-03-14)
국제출원번호
PCT/EP2013/050287
(2013-01-09)
국제공개번호
WO2013/135396
(2013-09-19)
발명자
/ 주소
Bera, Holger
Brunner, Heiko
출원인 / 주소
Atotech Deutschland GmbH
대리인 / 주소
Renner, Otto, Boisselle & Sklar, LLP
인용정보
피인용 횟수 :
2인용 특허 :
8
초록▼
The present invention relates to aqueous, alkaline plating bath compositions for electroless deposition of ternary and quaternary cobalt alloys Co-M-P, Co-M-B and Co-M-B—P, wherein M is selected from the group consisting of Mn, Zr, Re, Mo, Ta and W which comprise a propargyl derivative as the stabil
The present invention relates to aqueous, alkaline plating bath compositions for electroless deposition of ternary and quaternary cobalt alloys Co-M-P, Co-M-B and Co-M-B—P, wherein M is selected from the group consisting of Mn, Zr, Re, Mo, Ta and W which comprise a propargyl derivative as the stabilizing agent. The cobalt alloy layers derived there from are useful as barrier layers and cap layers in electronic devices such as semiconducting devices, printed circuit boards, and IC substrates.
대표청구항▼
1. An aqueous, alkaline plating bath composition for electroless deposition of ternary and quaternary cobalt alloys Co-M-P, Co-M-B and Co-M-B—P, wherein M is selected from the group consisting of Mn, Zr, Re, Mo, Ta and W, the plating bath comprising (i) a source of cobalt ions,(ii) a source of M ion
1. An aqueous, alkaline plating bath composition for electroless deposition of ternary and quaternary cobalt alloys Co-M-P, Co-M-B and Co-M-B—P, wherein M is selected from the group consisting of Mn, Zr, Re, Mo, Ta and W, the plating bath comprising (i) a source of cobalt ions,(ii) a source of M ions,(iii) at least one complexing agent selected from the group consisting of carboxylic acids, hydroxyl carboxylic acids, aminocarboxylic acids and salts of the aforementioned and wherein the concentration of the at least one complexing agent ranges from 0.01 to 0.3 mol/l,(iv) at least one reducing agent selected from the group consisting of hypophosphite ions, borane-based reducing agents, and mixtures thereof, and(v) a stabilising agent according to formula (1): wherein X is selected from O and NR4, n ranges from 1 to 6, m ranges from 1 to 8; R1, R2, R3 and R4 are independently selected from hydrogen and C1 to C4 alkyl; Y is selected from SO3R5, CO2R5 and PO3R52, and R5 is selected from hydrogen, sodium, potassium and ammonium wherein the concentration of the stabilising agent according to formula (1) ranges from 0.05 to 5.0 mmol/l. 2. The aqueous, alkaline plating bath according to claim 1 wherein Y is SO3R5 with R5 selected from hydrogen, sodium, potassium and ammonium. 3. The aqueous, alkaline plating bath according to claim 1 wherein the plating bath has a pH value of 7.5 to 12. 4. The aqueous, alkaline plating bath according to claim 1 wherein the concentration of cobalt ions ranges from 0.01 to 0.2 mol/l. 5. The aqueous, alkaline plating bath according to claim 1 wherein the concentration of the M ions ranges from 0.01 to 0.2 mol/l. 6. The aqueous, alkaline plating bath according to claim 1 wherein M is selected from the group consisting of Mo and W. 7. The aqueous, alkaline plating bath according to claim 1 wherein the concentration of the at least one reducing agent ranges from 0.01 to 0.5 mol/l. 8. The aqueous, alkaline plating bath according to claim 1 wherein the at least one reducing agent are hypophosphite ions. 9. A method for electroless deposition of ternary and quaternary cobalt alloys Co-M-P, Co-M-B and Co-M-B—P, wherein M is selected from the group consisting of Mn, Zr, Re, Mo, Ta and W comprising, in this order, the steps (i) Providing a substrate,(ii) Immersing the substrate in the aqueous, alkaline plating bath according to claim 1,and thereby depositing a ternary or quaternary cobalt alloy Co-M-P, Co-M-B and Co-M-B—P, wherein M is selected from the group consisting of Mn, Zr, Re, Mo, Ta and W onto the substrate.
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이 특허에 인용된 특허 (8)
Geldzahler Charles (Chicago IL) Sodhi Satwant S. (Chicago IL), Additives for bright plating nickel, cobalt and nickel-cobalt alloys.
Chen,Qingyun; Valverde,Charles; Paneccasio,Vincent; Petrov,Nicolai; Stritch,Daniel; Witt,Christian; Hurtubise,Richard, Defectivity and process control of electroless deposition in microelectronics applications.
Dubin Valery M. (Cupertino CA) Schacham-Diamand Yosi (Ithaca NY) Zhao Bin (Irvine CA) Vasudev Prahalad K. (Austin TX) Ting Chiu H. (Saratoga CA), Use of cobalt tungsten phosphide as a barrier material for copper metallization.
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