최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
DataON 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Edison 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
---|---|
국제특허분류(IPC7판) |
|
출원번호 | US-0669184 (2012-11-05) |
등록번호 | US-8975152 (2015-03-10) |
발명자 / 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 | 피인용 횟수 : 1 인용 특허 : 403 |
Methods of reducing dislocation in a semiconductor substrate between asymmetrical trenches are described. The methods may include etching a plurality of trenches on a semiconductor substrate and may include two adjacent trenches of unequal width separated by an unetched portion of the substrate. The
Methods of reducing dislocation in a semiconductor substrate between asymmetrical trenches are described. The methods may include etching a plurality of trenches on a semiconductor substrate and may include two adjacent trenches of unequal width separated by an unetched portion of the substrate. The methods may include forming a layer of dielectric material on the substrate. The dielectric material may form a layer in the trenches located adjacent to each other of substantially equivalent height on both sides of the unetched portion of the substrate separating the two trenches. The methods may include densifying the layer of dielectric material so that the densified dielectric within the two trenches of unequal width exerts a substantially similar stress on the unetched portion of the substrate that separates them.
1. A method of forming a layer of dielectric material on a patterned semiconductor substrate, the method comprising: etching a plurality of trenches on a semiconductor substrate, wherein the plurality of trenches includes two trenches that are of unequal width and are located adjacent to each other
1. A method of forming a layer of dielectric material on a patterned semiconductor substrate, the method comprising: etching a plurality of trenches on a semiconductor substrate, wherein the plurality of trenches includes two trenches that are of unequal width and are located adjacent to each other such that an unetched portion of the substrate separates the two trenches of unequal width;forming a layer of dielectric material on the semiconductor substrate, wherein the dielectric material forms a layer in the trenches located adjacent to each other of substantially equivalent height on both sides of the unetched portion of the substrate separating the two trenches; anddensifying the layer of dielectric material, wherein the densified dielectric within the two trenches of unequal width exerts substantially equal stress on the unetched portion of the substrate;wherein the densifying comprises:curing the dielectric material in an ozone (03) environment; andannealing the cured dielectric material in a steam environment;wherein the forming of the dielectric layer further comprises:flowing a nitrogen-containing precursor into a semiconductor deposition chamber in which the etched semiconductor substrate resides; andflowing a silicon-containing precursor into the deposition chamber to come into contact with the nitrogen-containing precursor over the etched semiconductor substrate. 2. The method of claim 1, wherein the layer of dielectric material is initially formed over the entire semiconductor substrate during a simultaneous deposition process step. 3. The method of claim 1, wherein at least one trench etched in the substrate has a trench width less than about 100 nanometers, and wherein the two trenches of unequal width have a trench width greater than about 100 nanometers. 4. The method of claim 3, wherein at least one trench etched in the substrate has a trench width less than about 50 nanometers, and wherein the two trenches of unequal width have a trench width greater than about 150 nanometers. 5. The method of claim 1, wherein the dielectric material is initially flowable when it is deposited on the semiconductor substrate so that a portion of the dielectric material deposited at the top of a trench flows toward the bottom of the trench. 6. The method of claim 1, wherein the temperature of the substrate during the forming of the dielectric layer is maintained below about 100° C., and wherein the forming of the dielectric layer on the substrate occurs in a processing chamber having a pressure below about 50 Torr. 7. The method of claim 6, wherein the temperature of the substrate during the forming of the dielectric layer is maintained below about 50° C., and wherein the forming of the dielectric layer on the substrate occurs in a processing chamber having a pressure below about 5 Torr. 8. The method of claim 1, wherein the temperature of the substrate during the curing and annealing is maintained at or below about 400° C. 9. The method of claim 8, wherein the temperature of the substrate during the curing is maintained at or below about 200° C. 10. The method of claim 1, wherein the nitrogen-containing precursor is ammonia. 11. The method of claim 10, wherein the ammonia has been flowed through a remote plasma region prior to entering the semiconductor deposition chamber to create ammonia radicals. 12. A method of forming a layer of dielectric material on a patterned semiconductor substrate, the method comprising: etching a plurality of trenches on a semiconductor substrate, wherein the plurality of trenches includes two trenches that are of unequal width and are located adjacent to each other such that an unetched portion of the substrate separates the two trenches of unequal width;flowing a plurality of precursor gases into the deposition chamber, wherein:the precursor gases comprise a silicon containing precursor, a nitrogen containing precursor, and an inert carrier gas,the flow rate of the nitrogen containing precursor is at least about two times the flow rate of the silicon containing precursor, andthe flow rate of the inert carrier gas is at least about five times the flow rate of the silicon containing precursor;forming a layer of dielectric material on the semiconductor substrate, wherein the dielectric material is initially flowable upon deposition so that a portion of the dielectric material deposited near the top of a trench flows toward the bottom of the trench; anddensifying the layer of dielectric material;wherein the formed dielectric layer forms a layer in the trenches located adjacent to each other of substantially equivalent height on both sides of the unetched portion of the substrate separating the two trenches;wherein the densifying comprises:curing the dielectric material in an ozone (03) environment; andannealing the cured dielectric material in a steam environment. 13. The method of claim 12, wherein the densified dielectric within the two trenches of unequal width exerts substantially equal stress on the unetched portion of the substrate. 14. The method of claim 12, wherein the temperature of the substrate during the curing and annealing is maintained at or below about 400° C. 15. The method of claim 12, wherein the nitrogen-containing precursor is ammonia. 16. The method of claim 15, wherein the ammonia has been flowed through a remote plasma region prior to entering the semiconductor deposition chamber to create ammonia radicals.
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.