A compositional range of high strain point and/or intermediate expansion coefficient alkali metal free aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices suc
A compositional range of high strain point and/or intermediate expansion coefficient alkali metal free aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices such as CdTe or CIGS photovoltaic devices or crystalline silicon wafer devices. These glasses can be characterized as having strain points≧600° C., thermal expansion coefficient of from 35 to 50×10−7/° C.
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1. A glass comprising, in mole percent: 73 to 75 percent SiO2;6 to 9 percent Al2O3;0 percent B2O3;1 to 3 percent MgO;0 percent SrO;13 to 16 percent CaO; and1 to 3 percent BaO; wherein MgO+CaO+BaO+SrO is 15 to 20 percent, wherein the glass is substantially free of alkali metal, and wherein the glass
1. A glass comprising, in mole percent: 73 to 75 percent SiO2;6 to 9 percent Al2O3;0 percent B2O3;1 to 3 percent MgO;0 percent SrO;13 to 16 percent CaO; and1 to 3 percent BaO; wherein MgO+CaO+BaO+SrO is 15 to 20 percent, wherein the glass is substantially free of alkali metal, and wherein the glass has a liquidus viscosity of 100,000 poise or greater. 2. The glass according to claim 1, wherein the glass has a liquidus viscosity of 200,000 poise or greater. 3. The glass according to claim 1, wherein MgO+CaO+BaO+SrO is 16 to 20 percent. 4. The glass according to claim 1, having a coefficient of thermal expansion in the range of from 35×10−7/° C. to 50×10−7/° C. 5. The glass according to claim 4, having a coefficient of thermal expansion in the range of from 39×10−7/° C. to 50×10−7/° C. 6. The glass according to claim 1, further comprising 0 to 0.5 mole percent of a fining agent. 7. The glass according to claim 6, wherein the fining agent is SnO2. 8. The glass according to claim 1, having a strain point of 600° C. or greater. 9. The glass according to claim 1, having a strain point of 630° C. or greater. 10. The glass according to claim 1, further comprising 0 to 2 mole percent of TiO2, MnO, ZnO, Nb2O5, Ta2O5, ZrO2, La2O3, Y2O3, P2O5, or a combination thereof. 11. The glass according to claim 1, having a strain point of 600° C. or greater and a coefficient of thermal expansion in the range of from 39×10−7/° C. to 50×10−7/° C. 12. The glass according to claim 1, wherein the glass is in the form of a sheet. 13. The glass according to claim 12, wherein the sheet has a thickness in the range of from 0.5 mm to 4.0 mm. 14. A photovoltaic device comprising the glass according to claim 1. 15. The photovoltaic device according to claim 14, wherein the glass is in the form of a sheet and is either a substrate or superstrate. 16. The photovoltaic device according to claim 15, comprising a functional layer comprising copper indium gallium diselenide, amorphous silicon, crystalline silicon, one or more crystalline silicon wafers, cadmium telluride, or combinations thereof adjacent to the substrate or superstrate. 17. The photovoltaic device according to claim 16, further comprising one or more intermediate layers disposed between the superstrate or substrate and the functional layer.
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