초록 ▼

A method for the contamination-free heating of a highly pure gas to a temperature of from 300 to 1200° C. involves passing the highly pure gas at a pressure of from 0.1 to 10 bar abs. over a highly pure solid which does not contaminate the gas, the solid being present in a highly pure container whos

A method for the contamination-free heating of a highly pure gas to a temperature of from 300 to 1200° C. involves passing the highly pure gas at a pressure of from 0.1 to 10 bar abs. over a highly pure solid which does not contaminate the gas, the solid being present in a highly pure container whose wall consists of a material which has a transparency of more than 85% for infrared rays and the container being irradiated by means of the infrared rays, the solid being heated thereby and the solid heating the gas.

대표청구항 ▼

1. A method for the contamination-free preheating of a highly pure gas prior to introducing the heated gas into a reactor, comprising passing highly pure gas at a pressure of from 0.1 to 10 bar abs over a highly pure solid which does not contaminate the gas and does not react with the gas, the solid

1. A method for the contamination-free preheating of a highly pure gas prior to introducing the heated gas into a reactor, comprising passing highly pure gas at a pressure of from 0.1 to 10 bar abs over a highly pure solid which does not contaminate the gas and does not react with the gas, the solid being present in a highly pure container whose wall has a transparency of more than 85% for infrared rays and the container being irradiated by means of the infrared rays, the solid being heated thereby and the solid heating the gas to form a heated gas having a temperature of from 300° C. to 1200° C., the container being filled with the highly pure solid, which comprises granules, fragments or shaped articles, such that the solid is immobile in the container and the gas to be heated can flow around said solid. 2. The method of claim 1, wherein the solid is selected from the group consisting of silicon, SiC, Si3N4, and mixtures thereof, wherein the solid has less than 100 ppm (weight) of impurities in total. 3. The method of claim 1, wherein highly pure polycrystalline silicon is used as the solid. 4. The method of claim 3, wherein the gas to be heated is hydrogen, and the gas is heated to a temperature in the range from 300° C. to 1200° C. 5. The method of claim 3, wherein the gas to be heated is a mixture of hydrogen and trichlorosilane, and the mixture is heated to a temperature in the range from 300° C. to 400° C. 6. The method of claim 1, wherein the method is carried out at a pressure of from 1 to 10 bar abs. 7. The method of claim 1, wherein the gas to be heated is a gas selected from the group consisting of silane, halosilane, hydrogen, and mixtures thereof. 8. The method of claim 1, wherein from 50 to 500 m3/h of gas is passed through the container. 9. The method of claim 1, further comprising introducing the heated gas into a reactor. 10. The method of claim 9, wherein the reactor is a fluidized bed reactor for deposition of silicon. 11. The method of claim 1, wherein the gas to be heated comprises a mixture of hydrogen and at least one of a silane or chlorosilane, the gas is heated to a temperature below the decomposition temperature of the silane and chlorosilane, further comprising introducing the heated gas into a fluidized bed reactor for deposition of silicon, the reaction temperature of the fluidized bed in the fluidized bed reactor being in the range of 500° C. to 1200° C., wherein the heated gas introduced into the reactor lowers the amount of heat supplied to maintain the reaction temperature of the fluidized bed. 12. The method of claim 1, further comprising conveying the heated gas to a fluidized bed reactor wherein silicon metal is deposited by decomposition of the silane or chlorosilane.