Plasma reactor with a multiple zone thermal control feed forward control apparatus
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/67
H01L-021/683
H01J-037/32
F25B-049/02
C23C-016/46
C23C-016/50
C23C-016/503
C23C-016/52
H01L-021/3065
H05H-001/46
출원번호
US-0855670
(2010-08-12)
등록번호
US-8980044
(2015-03-17)
발명자
/ 주소
Brillhart, Paul Lukas
Fovell, Richard
Tavassoli, Hamid
Buchberger, Jr., Douglas A.
Burns, Douglas H.
Bera, Kallol
Hoffman, Daniel J.
Cowans, Kenneth W.
Cowans, William W.
Zubillaga, Glenn W.
Millan, Isaac
출원인 / 주소
BE Aerospace, Inc.
대리인 / 주소
Knobbe, Martens, Olson & Bear LLP
인용정보
피인용 횟수 :
2인용 특허 :
109
초록▼
A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respec
A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and cuter expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively. Inner and outer zone agile control processors coupled to the thermal model govern the inner and outer zone backside gas pressure sources, respectively, in response to predictions from the model of changes in the respective pressures that would bring the temperatures measured by the inner and outer zone sensors, respectively, closer to a desired temperature.
대표청구항▼
1. A plasma reactor, comprising: a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside said chamber;inner and outer zone backside gas pressure sources coupled to said electrostatic chuck for applying a thermally conductive gas under respective pressures to resp
1. A plasma reactor, comprising: a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside said chamber;inner and outer zone backside gas pressure sources coupled to said electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on said surface;inner and outer evaporators inside respective inner and outer zones of said electrostatic chuck and a refrigeration loop having respective inner and outer zones of said electrostatic chuck and a refrigeration loop having respective inner and outer expansion valves for controlling flow of coolant through said inner and outer evaporators respectively;inner and outer zone temperature sensors in inner and outer zones of said electrostatic chuck;a thermal model capable of simulating heat transfer through said inner and outer zones, respectively, between said evaporator and said surface based upon measurements from said inner and outer temperature sensors, respectively;inner and outer zone agile control processors coupled to said thermal model and governing said inner and outer zone backside gas pressure sources, respectively, in response to predictions from said thermal model of changes in said respective pressures that would bring the temperatures measured by said inner and outer zone sensors, respectively, closer to a desired temperature. 2. The reactor of claim 1 further comprising: inner and outer zone large range control processors coupled to said thermal model and governing said inner and outer zone expansion valves, respectively, in response to predictions from said thermal model of changes thermal conditions in or near said inner and outer zone evaporators, respectively, that would bring the temperatures measured by said inner and outer zone sensors closer to a desired temperature. 3. The reactor of claim 2 wherein said thermal model comprises: plural cascaded simulation elements representing thermal properties of corresponding layers of said electrostatic chuck for each one of said inner and outer zones. 4. The reactor of claim 3 wherein each of said simulation elements of said thermal model comprises a heat capacitance value and a thermal resistance value representative of the corresponding layer of said electrostatic chuck for each one of said inner and outer zones. 5. The reactor of claim 1 further comprising an overhead electrode, a plasma source power RF generator, an impedance matching tuning stub having a stub resonant frequency and coupled between said plasma source power RF generator and said overhead electrode, said overhead electrode forming a resonance with plasma in said chamber at a plasma-electrode resonant frequency, said plasma-electrode resonant frequency, said stub resonant frequency and the frequency of said plasma source power RF generator being VHF frequencies that are nearly equal with a small offset between them. 6. The reactor of claim 1 wherein said electrostatic chuck comprises: an insulating puck layer having a top surface for receiving a wafer;a conductive base layer supporting said insulating puck layer;an ESC electrode buried in said insulating puck layer;a bias power feed conductor extending axially through said base and puck layers of said electrostatic chuck and having a top end connected to a feed point of said ESC electrode and a bottom end coupled to said RF plasma bias power generator; anda plurality of dielectric cylindrical sleeves surrounding respective portions of said bias power feed conductor and having respective lengths and dielectric constants that optimize uniformity of electric field distribution across said top surface of said insulating puck layer. 7. The reactor of claim 1 further comprising a dielectric ring lying on or in a plane of said top surface of said puck layer and surrounding a circumference corresponding to a workpiece diameter of said electrostatic chuck, said dielectric ring having a dielectric constant enabling said ring to compensate for RF edge effects over said electrostatic chuck during plasma processing of a workpiece. 8. The reactor of claim 1, further comprising: a memory storing a schedule of changes in RF power,wherein said inner and outer zone agile control processors govern said inner and outer zone backside gas pressure sources, respectively, in response to predictions from said thermal model of changes in said respective pressures that would bring the temperatures measured by said inner and outer zone sensors, respectively, closer to a desired temperature. 9. A plasma reactor, comprising: a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside said chamber;inner and outer zone backside gas pressure sources coupled to said electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on said surface;inner and outer evaporators inside respective inner and outer zones of said electrostatic chuck and a refrigeration loop having respective inner and outer expansion valves for controlling flow of coolant through said inner and outer evaporators respectively;inner and outer zone temperature sensors in inner and outer zones of said electrostatic chuck;a memory storing a schedule of changes in RF power;a thermal model capable of simulating heat transfer through said inner and outer zones, respectively, between said evaporator and said surface based upon measurements from said inner and outer temperature sensors, respectively;inner and outer zone agile control processors coupled to said thermal model and governing said inner and outer zone backside gas pressure sources, respectively, in response to predictions from said thermal model of changes in said respective pressures that would compensate for the effect of the next scheduled change in RF power in each respective one of said zones. 10. The reactor of claim 9 further comprising: inner and outer zone large range control processors coupled to said thermal model and governing said inner and outer zone expansion valves, respectively, in response to predictions from said thermal model of changes thermal conditions in or near said inner and outer zone evaporators, respectively, that would compensate for the effect of the next scheduled change in RF power in each respective one of said zones. 11. The reactor of claim 10 wherein said thermal model comprises: plural cascaded simulation elements representing thermal properties of corresponding layers of said electrostatic chuck for each one of said inner and outer zones. 12. The reactor of claim 11 wherein each of said simulation elements of said thermal model comprises a heat capacitance value and a thermal resistance value representative of the corresponding layer of said electrostatic chuck for each one of said inner and outer zones. 13. The reactor of claim 9 further comprising an overhead electrode, a plasma source power RF generator, an impedance matching tuning stub having a stub resonant frequency and coupled between said plasma source power RF generator and said overhead electrode, said overhead electrode forming a resonance with plasma in said chamber at a plasma-electrode resonant frequency, said plasma-electrode resonant frequency, said stub resonant frequency and the frequency of said plasma source power RF generator being VHF frequencies that are nearly equal with a small offset between them. 14. The reactor of claim 9 wherein said electrostatic chuck comprises: an insulating puck layer having a top surface for receiving a wafer;a conductive base layer supporting said insulating puck layer;an ESC electrode buried in said insulating puck layer;a bias power feed conductor extending axially through said base and puck layers of said electrostatic chuck and having a top end connected to a feed point of said ESC electrode and a bottom end coupled to said RF plasma bias power generator; anda plurality of dielectric cylindrical sleeves surrounding respective portions of said bias power feed conductor and having respective lengths and dielectric constants that optimize uniformity of electric field distribution across said top surface of said insulating puck layer. 15. The reactor of claim 9 further comprising a dielectric ring lying on or in a plane of said top surface of said puck layer and surrounding a circumference corresponding to a workpiece diameter of said electrostatic chuck, said dielectric ring having a dielectric constant enabling said ring to compensate for RF edge effects over said electrostatic chuck during plasma processing of a workpiece. 16. The reactor of claim 9 wherein said electrostatic chuck comprises an upper insulating puck layer having a top surface for supporting a workpiece and a lower conductive base layer containing said evaporator, and an axially extending cylindrical probe hole through said base layer and through a into said puck layer, and wherein at least one of said inner and outer zone temperature sensors comprises: an upper probe comprising: an elongate opaque insulative cylindrical upper probe housing extending axially into said probe hole beginning at a bottom end of the upper probe housing and terminating at a top end of the upper probe housing, said top end being located at a top end of said probe hole beneath said top layer, said bottom end being located at a bottom opening of said probe hole;an optically responsive temperature transducer within said upper probe housing at said top end;an optical fiber having a top end coupled to said optically responsive temperature transducer and extending axially through said upper probe housing. 17. The reactor of claim 16 wherein said one temperature sensor further comprises a lower probe comprising: an elongate cylindrical lower probe housing extending axially from a top end facing and contacting said bottom end of said upper probe housing;an optical fiber having a top end coupled to a bottom end of said optical fiber of said upper probe and extending axially through said lower probe housing. 18. The reactor of claim 17 wherein said one temperature sensor further comprises: an upper coil spring biasing said upper probe housing toward said top end of said probe hole; anda lower coil spring biasing said lower probe housing toward the bottom end of said upper probe housing, said upper coil spring having greater stiffness than said lower coil spring. 19. The reactor of claim 16 wherein said upper probe housing has a diameter less than a Debye length of a plasma in said reactor.
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