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An adaptive algorithm running on a processing device receives a temperature value that represents a temperature at a gate terminal of a transistor. The adaptive algorithm, determines a drive strength value that represents a drive strength for a signal based on the temperature value. A signal with th

An adaptive algorithm running on a processing device receives a temperature value that represents a temperature at a gate terminal of a transistor. The adaptive algorithm, determines a drive strength value that represents a drive strength for a signal based on the temperature value. A signal with the determined drive strength is applied to the gate terminal of the transistor.

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1. A method, comprising: receiving, at a processing system, a temperature value that represents a temperature at a gate terminal of a first transistor;determining, by a processor of the processing system, a drive strength value based on the temperature value, wherein the drive strength value compris

1. A method, comprising: receiving, at a processing system, a temperature value that represents a temperature at a gate terminal of a first transistor;determining, by a processor of the processing system, a drive strength value based on the temperature value, wherein the drive strength value comprises a digital value indicating a drive strength for a drive signal to be applied to the gate terminal of the first transistor, wherein the drive strength for the drive signal is directly proportional to the temperature;adjusting the drive strength of the drive signal, by a variable strength gate driver circuit coupled to the processing system and the first transistor, based on the determined drive strength value, wherein adjusting the drive strength of the drive signal comprises selecting one or more second transistors, which is different from the first transistor, in the variable strength gate driver circuit to at least one of charge or discharge the gate terminal of the first transistor, wherein the selected one or more second transistors control a speed at which the gate terminal of the first transistor is charged or discharged; andapplying the drive signal with the adjusted drive strength to the gate terminal of the first transistor. 2. The method of claim 1, further comprising: determining whether a temperature threshold value has been defined. 3. The method of claim 2, wherein when the temperature threshold value is defined, determining the drive strength value comprises comparing the temperature value to a first predefined temperature threshold value and determining the drive strength value based on the comparison. 4. The method of claim 3, wherein determining the drive strength value further comprises comparing the temperature value to a second predefined temperature threshold value and determining the drive strength value based on the comparison. 5. The method of claim 1, wherein, when a temperature threshold value is not defined, determining the drive strength value comprises calculating the drive strength value with a drive strength equation using the temperature value for a variable in the drive strength equation. 6. The method of claim 1, further comprising: providing the drive strength value to a driver control logic block of a variable strength gate driver circuit. 7. The apparatus of claim 1, wherein the drive strength of the drive signal increases when the temperature increases, and the drive strength of the drive signal decreases when the temperature decreases. 8. A system, comprising: a first transistor comprising a gate terminal;a processing system comprising a processor unit, wherein the processing system comprises a machine readable storage medium storing instructions which, when executed by the processor unit, cause the processing system to: receive a temperature value that represents a temperature at the gate terminal of the first transistor, anddetermine a drive strength value that represents a drive strength for the signal based on the temperature value, wherein the drive strength value comprises a digital value indicating a drive strength for a drive signal to be applied to the gate terminal of the first transistor, wherein the drive strength for the drive signal is directly proportional to the temperature; anda variable strength gate driver circuit coupled to the processing system and the first transistor and configured to supply a drive signal to the gate terminal of the first transistor, the signal to control a speed at which the gate terminal of the first transistor is charged or discharged, the variable strength gate driver circuit is further configured to: receive the determined drive strength value from the processing system,adjust the drive strength value of the drive signal based on the determined drive strength value, wherein adjusting the drive strength of the drive signal comprises selecting one or more second transistors, which is different from the first transistor, in the variable strength gate driver circuit to at least one of charge or discharge the gate terminal of the first transistor, wherein the selected one or more second transistors control a speed at which the gate terminal of the first transistor is charged or discharged, andapply the drive signal with the adjusted drive strength to the gate terminal of the first transistor. 9. The system of claim 8, wherein the instructions further cause the processing system to: determine whether a temperature threshold value has been defined. 10. The system of claim 9, wherein when the temperature threshold value is defined, the instructions further cause the processing system to: compare the temperature value to a first predefined temperature threshold value. 11. The system of claim 10, wherein the instructions further cause the processing system to: compare the temperature value to a second predefined temperature threshold value. 12. The system of claim 8, wherein when a temperature threshold value is not defined, the instructions further cause the processing system to: apply the temperature value to calculate a drive strength equation using the temperature value for a variable. 13. The system of claim 12, wherein when the drive strength equation is not used, the drive strength value represents no change in the drive strength of the signal. 14. The system of claim 8, wherein the variable strength gate driver circuit comprises: a first driver transistor array comprising an array of N-type metal-oxide-semiconductor field-effect (NMOS) transistors;a second driver transistor array comprising an array of P-type metal-oxide-semiconductor field-effect (PMOS) transistors; anda driver control logic block configured to receive the drive strength value from the processing system and modulate the drive strength based on the drive strength value by selecting the one or more NMOS or PMOS transistor from one of the first driver transistor array or the second driver transistor array to charge or discharge the gate terminal of the first transistor. 15. The system of claim 14, wherein the driver control logic block is further configured to: activate at least a first PMOS transistor of the PMOS transistor array if the received drive strength value indicates that the drive strength is increased; andactivate at least a first NMOS transistor of the NMOS transistor array if the drive strength value indicates that the drive strength is decreased. 16. The system of claim 8, wherein the drive strength of the drive signal increases when the temperature increases, and the drive strength of the signal decreases when the temperature decreases. 17. An apparatus comprising: a temperature sensor configured to measure a temperature at a gate terminal of a first transistor, the temperature sensor to indicate the temperature with a temperature value;a processing system coupled to the temperature sensor, the processing system configured to compare the temperature value to a temperature threshold and determine a drive strength value based on the comparison, wherein the drive strength value comprises a digital value indicating a drive strength for a drive signal to be applied to the gate terminal of the first transistor, wherein the drive strength for the drive signal is directly proportional to the temperature; anda variable strength gate driver circuit coupled to the processing system and the first transistor, the variable strength gate driver circuit configured to adjust the drive strength of the drive signal based on the determined drive strength value, wherein adjusting the drive strength of the drive signal comprises selecting one or more second transistors, which is different from the first transistor, in the variable strength gate driver circuit to at least one of charge or discharge the gate terminal of the first transistor, wherein the selected one or more second transistors control a speed at which the gate terminal of the first transistor is charged or discharged, and wherein the variable strength gate driver circuit is further configured to apply the drive signal with the adjusted drive strength to the gate terminal of the first transistor. 18. The apparatus of claim 17, wherein the variable strength gate driver circuit comprises a control logic circuit, and wherein a first driver transistor array comprises one of an array of N-type metal-oxide-semiconductor field-effect (NMOS) transistors or an array of P-type metal-oxide-semiconductor field-effect (PMOS) transistors, the control logic circuit to enable the one or more NMOS or PMOS transistor in the first driver transistor array to modulate the drive signal with the determined drive strength value. 19. The apparatus of claim 17, wherein the drive signal with the determined drive strength value is applied to a third transistor in a power converter circuit. 20. The apparatus of claim 17, wherein the drive strength of the drive signal increases when the temperature value increases, and the drive strength of the drive signal decreases when the temperature value decreases.