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A plasma processing apparatus includes a temperature measuring unit; airtightly sealed temperature measuring windows provided in a mounting table, for optically communicating to transmit a measurement beam through a top surface and a bottom surface of the mounting table; and one or more connection m

A plasma processing apparatus includes a temperature measuring unit; airtightly sealed temperature measuring windows provided in a mounting table, for optically communicating to transmit a measurement beam through a top surface and a bottom surface of the mounting table; and one or more connection members for connecting the mounting table and a base plate, which is provided in a space between the mounting table and the base plate. In the plasma processing apparatus, a space above the mounting table is set to be maintained under a vacuum atmosphere, and a space between the mounting table and the base plate is set to be maintained under a normal pressure atmosphere, and each collimator is fixed to the base plate at a position corresponding to each temperature measuring window, thereby measuring a temperature of the substrate via the temperature measuring windows by the temperature measuring unit.

대표청구항 ▼

1. A plasma processing apparatus comprising: a vacuum chamber in which a substrate is to be accommodated and processed by a plasma;a mounting table provided in the vacuum chamber for mounting the substrate thereon, the mounting table including an RF plate made of an electrically conductive material;

1. A plasma processing apparatus comprising: a vacuum chamber in which a substrate is to be accommodated and processed by a plasma;a mounting table provided in the vacuum chamber for mounting the substrate thereon, the mounting table including an RF plate made of an electrically conductive material;a base plate provided below the mounting table and having a space therebetween;a temperature measuring unit including: a light source,a splitter for dividing a light beam from the light source into a measurement beam and a reference beam,a reference beam reflector for reflecting the reference beam from the splitter,an optical path length altering unit for altering an optical path length of the reference beam reflected from the reference beam reflector,an optical fiber for irradiating the measurement beam onto the substrate, a collimator provided at an outlet of the optical fiber, anda light detecting unit for detecting an interference between the measurement beam reflected from the substrate and the reference beam reflected from the reference beam reflector;an airtightly sealed temperature measuring window provided in the mounting table for optically communicating a top surface and a bottom surface of the mounting table to transmit the measurement beam therethrough;a plurality of connection members connecting the mounting table and the base plate, the connection members being provided inside the space between the mounting table and the base plate; and a power feed bar connected to a central portion of the RF plate and to which a high frequency power is applied to supply the high frequency power to the RF plate,wherein a space above the mounting table is set to be maintained under a vacuum atmosphere, and the space between the mounting table and the base plate is set to be maintained under a normal pressure atmosphere,wherein the collimator is fixed to the base plate at a position corresponding to the temperature measuring window, thereby measuring a temperature of the substrate via the temperature measuring window by the temperature measuring unit,wherein the plasma processing apparatus further comprises a prism located at the mounting table and configured to bend an optical path of the measurement beam to a horizontal path and to a vertical path to irradiate the measurement beam onto the substrate to enable a temperature at a central portion of the substrate that is above the power feed bar to be measured,wherein the temperature measuring unit is configured to measure at least two portions of the substrate along a radial direction of the substrate, and said at least two portions of the substrate includes the central portion of the substrate,wherein the vacuum chamber has therein a facing electrode facing the mounting table and a cell located on the facing surface of the facing electrode and made of silicon which transmits an infrared ray therethrough such that measurement beams emitted from the mounting table are reflected from a top surface and a bottom surface of the cell, and wherein the temperature measuring unit measures a temperature of the cell based on reflected measurement beams from the top surface and the bottom surface of the cell via the substrate on the mounting table and the temperature measuring window. 2. The plasma processing apparatus of claim 1, wherein the mounting table includes an electrostatic chuck provided on the RF plate, for attracting and holding the substrate. 3. The plasma processing apparatus of claim 1, wherein the temperature measuring unit further includes a second splitter for dividing the measurement beam from the splitter into a first to an nth measurement beams, thereby measuring temperatures at a plurality of points by using a plurality of measurement beams from the second splitter. 4. The plasma processing apparatus of claim 1, wherein the prism is configured to change the optical path of the measurement beam from a horizontal direction to an upward direction going toward the substrate. 5. The plasma processing apparatus of claim 4, wherein the mounting table includes a chuck that is located between the prism and the substrate. 6. The plasma processing apparatus of claim 1, wherein the temperature measuring unit measures the temperature of the facing electrode based on a change between an interference waveform induced by a reflected measurement beam from a bottom surface of the facing electrode and an interference waveform induced by a reflected measurement beam from a top surface of the facing electrode. 7. The plasma processing apparatus of claim 1, wherein the temperature measuring window is detachable from the mounting table. 8. The plasma processing apparatus of claim 1, wherein the central portion of the substrate is located directly above the power feed bar and the prism is arranged for measuring the temperature of the central portion located directly above the power feed bar. 9. The plasma processing apparatus according to claim 1, further comprising: a focus ring installed on the mounting table; a sidewall window formed on a sidewall of the plasma processing apparatus; and a prism fixed on the focus ring and configured to bend an optical path of a measurement beam emitted from the temperature measuring unit through the sidewall window, wherein the temperature measuring unit measures a temperature of the focus ring based on a reflection of the measurement beam from a surface of the focus ring through the prism and through the sidewall window.