초록 ▼

Highly-qualified crystals are grown with good yield under an optimal temperature condition by controlling the axial temperature distribution in the vicinity of the seed crystal locally. In an apparatus for producing crystals to grow crystals wherein a seed crystal 14 is placed in a crucible 11 which

Highly-qualified crystals are grown with good yield under an optimal temperature condition by controlling the axial temperature distribution in the vicinity of the seed crystal locally. In an apparatus for producing crystals to grow crystals wherein a seed crystal 14 is placed in a crucible 11 which is retained in a furnace, raw materials 12 filled in the crucible 11 are heated and liquefied, and a raw material 12 slowly cooled in the crucible 11 from below upward, the apparatus including a temperature controller for controlling temperature to cool or heat the vicinity of the seed crystal 14 locally. The temperature controller controls the temperature by a hollow constructed cap 17 mounted outside the portion of crucible 11 and regulates refrigerant flow running through the hollow portion.

대표청구항 ▼

1. An apparatus for producing crystals wherein a seed crystal is placed in a crucible retained in a furnace, raw materials filled in the crucible are heated and liquefied, and a crystal is grown by slow cooling of the raw materials in the crucible from below upward, said apparatus comprising: a temp

1. An apparatus for producing crystals wherein a seed crystal is placed in a crucible retained in a furnace, raw materials filled in the crucible are heated and liquefied, and a crystal is grown by slow cooling of the raw materials in the crucible from below upward, said apparatus comprising: a temperature controlling means including a hollow constructed cap mounted directly outside the portion of the crucible where the seed crystal is placed, the cap being separated from a crucible support member, wherein the temperature controlling means regulates refrigerant flow running through the hollow portion of the cap to control a temperature of the seed crystal;wherein the overall cross section of the cap outside the portion of the crucible where the seed crystal is placed decreases in size along an upward path direction of the refrigerant flow, and the temperature controlling means performs cooling or heating in the vicinity of the seed crystal locally. 2. The apparatus for producing the crystals according to claim 1, wherein: the cap is divided into multiple caps; andthe temperature controlling means independently regulates refrigerant flow running through each hollow portion of the multiple caps. 3. The apparatus for producing the crystals according to claim 1, wherein the cap includes a heater and the temperature controlling means controls the heater along with the refrigerant flow to control the temperature of the seed crystal. 4. The apparatus for producing the crystals according to claim 1, wherein the material of the cap consists of one of a metal having conductive property, heat-resistant and corrosion-resistant of Pt or the equivalent, and an oxide having conductive property, heat-resistant and corrosion-resistant. 5. The apparatus for producing crystals according to claim 1, wherein the cap encircles the crucible. 6. An apparatus for producing crystals wherein a seed crystal is placed in a crucible retained in a furnace, raw materials filled in the crucible are heated and liquefied, and a crystal is grown by slow cooling of raw materials in the crucible from below upward, said apparatus comprising: a temperature controlling means including a helical pipe mounted directly outside the portion of the crucible where the seed crystal is placed, the pipe being separated from a crucible support member, wherein the temperature controlling means regulates refrigerant flow running through the pipe to control a temperature of the seed crystal;wherein the refrigerant flow moves upward through at least a portion of the pipe mounted directly outside the portion of the crucible where the seed crystal is placed and the cross section of the portion of the pipe through which the refrigerant flow moves upward decreases in size along the upward path direction of the refrigerant flow and the temperature controlling means performs cooling or heating in the vicinity of the seed crystal locally. 7. The apparatus for producing the crystals according to claim 6 wherein the temperature controlling means regulates the refrigerant flow by introducing refrigerant at a lower portion of the pipe and discharging refrigerant from an upper portion of the pipe. 8. The apparatus for producing the crystals according to claim 6 wherein: the pipe is divided into multiple pipes; andthe temperature controlling means independently regulates refrigerant flow running through each of the multiple pipes. 9. The apparatus for producing the crystals according to claim 6, wherein the pipe includes a heater and the temperature controlling means controls the heater along with the refrigerant flow to control the temperature of the seed crystal. 10. The apparatus for producing the crystals according to claim 6, wherein the material of the pipe consist of one of a metal having conductive property, heat-resistant and corrosion-resistant of Pt or the equivalent, and an oxide having conductive property, heat-resistant and corrosion-resistant. 11. The apparatus for producing crystals according to claim 6, wherein the portion of the pipe through which the refrigerant flow moves upward abuts the crucible. 12. An apparatus for producing crystals by slow cooling of a raw material solution from below upward, the apparatus comprising: a crucible configured to receive a seed crystal and raw materials, the crucible having a lower portion in which the seed crystal is placed;a heating element configured to heat and liquefy the raw materials disposed within the crucible so as to form a raw material solution;a crucible support member on which the crucible rests; andtemperature controlling means that perform local cooling and heating of the lower portion of the crucible, the temperature controlling means comprising: a refrigerant flow element positioned adjacent to the lower portion of the crucible, the refrigerant flow element configured to allow a refrigerant to flow upward therethrough, the refrigerant flow element being physically separated from the crucible support member, wherein an overall cross section of the refrigerant flow element adjacent to the lower portion of the crucible decreases in size along the upward path direction of the refrigerant flow. 13. The apparatus for producing crystals according to claim 12, wherein the refrigerant flow element comprises a hollow cap. 14. The apparatus for producing crystals according to claim 12, wherein: the refrigerant flow element comprises a plurality of hollow caps; andthe temperature controlling means independently regulates refrigerant flow running through each hollow portion of the plurality of caps. 15. The apparatus for producing crystals according to claim 12, wherein the refrigerant flow element comprises a helical pipe. 16. The apparatus for producing crystals according to claim 15 wherein the helical pipe is configured to receive the refrigerant at a bottom portion thereof and discharge the refrigerant at an upper portion thereof. 17. The apparatus for producing crystals according to claim 12, wherein the refrigerant flow element includes a heater and the temperature controlling means controls the heater. 18. The apparatus for producing crystals according to claim 12, wherein the refrigerant flow element positioned adjacent to the lower portion of the crucible abuts the crucible and the cross section of the portion of the refrigerant flow element that abuts the crucible decreases in size along the upward path direction of the refrigerant flow.