초록

The present invention relates to methods of forming substrate elements, including semiconductor elements such as nanowires, transistors and other structures, as well as the elements formed by such methods.

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1. A method for forming one or more substrate elements, comprising: (a) providing a substrate layer disposed on a support layer;(b) disposing one or more masking regions on the substrate layer to cover at least a portion of the substrate layer;(c) removing one or more uncovered substrate layer secti

1. A method for forming one or more substrate elements, comprising: (a) providing a substrate layer disposed on a support layer;(b) disposing one or more masking regions on the substrate layer to cover at least a portion of the substrate layer;(c) removing one or more uncovered substrate layer sections;(d) completely removing the support layer beneath the substrate layer, thereby forming one or more suspended substrate elements which are suspended as a bridge above the support layer, wherein the suspended substrate elements remain attached to the substrate layer only at one or both ends of the substrate elements and can be processed prior to removal; and(e) removing the substrate elements. 2. The method of claim 1, wherein the providing comprises providing a substrate layer comprising a semiconductor and a support layer comprising a semiconductor oxide or semiconductor alloy. 3. The method of claim 2, wherein the providing comprises providing a substrate layer comprising Si and a support layer comprising SiO2 or SiGe. 4. The method of claim 1, wherein the disposing in (b) comprises disposing a photolithography mask. 5. The method of claim 1, wherein the removing in (c) comprises etching. 6. The method of claim 5, wherein the etching comprises anisotropic etching. 7. The method of claim 1, wherein the removing in (d) comprises etching. 8. The method of claim 7, wherein the etching comprises isotropic etching. 9. The method of claim 1, wherein the removing in (e) comprises: i. disposing one or more masking regions on the suspended substrate elements;ii. removing at least a portion of the suspended substrate elements and/or the substrate layer, thereby separating the suspended substrate elements from the substrate layer; andiii. removing the masking regions. 10. The method of claim 9, wherein the disposing in i. comprises disposing a photolithography mask. 11. The method of claim 10, wherein the removing in ii. comprises etching. 12. The method of claim 11, wherein the etching comprises anisotropic etching. 13. The method of claim 1, wherein the removing in (e) comprises sonicating the suspended substrate elements so as to separate the substrate elements from the substrate layer. 14. The method of claim 1, wherein the removing in (e) comprises mechanically cutting the suspended substrate elements so as to separate the substrate elements from the substrate layer. 15. The method of claim 1, wherein the removing in (d) forms one or more suspended substrate elements, wherein the suspended substrate elements remain attached to the substrate layer via one or more lateral support tabs. 16. A method for forming one or more substrate elements, comprising: (a) providing a substrate layer disposed on a support layer;(b) disposing one or more masking regions on the substrate layer to cover at least a portion of the substrate layer;(c) removing one or more uncovered substrate layer sections;(d) completely removing the support layer beneath the substrate layer, thereby forming one or more suspended substrate elements which are suspended as a bridge above the support layer, wherein the suspended substrate elements remain attached to the substrate layer only at one or both ends of the substrate elements;(e) processing the suspended substrate elements; and(f) removing the substrate elements. 17. A nanowire prepared by a method comprising: (a) providing a substrate layer disposed on a support layer;(b) disposing one or more masking regions on the substrate layer to cover at least a portion of the substrate layer;(c) removing one or more uncovered substrate layer sections;(d) completely removing the support layer beneath the substrate layer, thereby forming one or more suspended substrate elements which are suspended as a bridge above the support layer, wherein the suspended substrate elements remain attached to the substrate layer only at one or both ends of the substrate elements and can be processed prior to removal; and(e) removing the substrate elements as nanowires. 18. A nanowire prepared by a method comprising: (a) providing a substrate layer disposed on a support layer;(b) disposing one or more masking regions on the substrate layer to cover at least a portion of the substrate layer;(c) removing one or more uncovered substrate layer sections;(d) removing the masking regions;(e) completely removing the support layer beneath the substrate layer, thereby forming one or more suspended substrate elements which are suspended as a bridge above the support layer, wherein the suspended substrate elements remain attached to the substrate layer only at one or both ends of the substrate elements;(f) processing the suspended substrate elements; and(g) removing the substrate elements as nanowires. 19. A method for forming one or more substrate elements, comprising: (a) providing a substrate layer disposed on a support layer;(b) disposing one or more masking regions on the substrate layer to cover at least a portion of the substrate layer;(c) completely removing one or more uncovered substrate layer sections, thereby forming one or more substrate elements which are suspended as a bridge above the support layer, wherein the suspended substrate elements remain attached to the substrate layer only at one or both ends of the substrate elements;(d) processing the substrate elements; and(e) removing the substrate elements.