Semiconductor memory device and method of fabricating the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/20
H01L-049/02
H01L-027/105
H01L-027/108
H01L-027/115
H01L-021/84
H01L-027/06
H01L-027/12
출원번호
US-0175652
(2011-07-01)
등록번호
US-9012292
(2015-04-21)
우선권정보
KR-10-2009-0063938 (2010-07-02)
발명자
/ 주소
Lee, Sang-Yun
출원인 / 주소
Lee, Sang-Yun
대리인 / 주소
Martinez, Greg L
인용정보
피인용 횟수 :
0인용 특허 :
73
초록▼
A method for fabricating semiconductor memory device, includes providing a semiconductor substrate; forming a lower region which includes a first data storage device, which is carried by the semiconductor substrate; forming a switching device which is carried by the first data storage device; and fo
A method for fabricating semiconductor memory device, includes providing a semiconductor substrate; forming a lower region which includes a first data storage device, which is carried by the semiconductor substrate; forming a switching device which is carried by the first data storage device; and forming an upper region which includes a second data storage device, which is carried by the switching device. The step of forming the first storage device includes forming a first electrode having a cylindrical or pillar shape, the first electrode being connected to the switching device.
대표청구항▼
1. A method for fabricating semiconductor memory device, comprising: providing a semiconductor substrate;forming a lower region, which includes a first data storage device, wherein the lower region is carried by the semiconductor substrate;forming a switching device, which is carried by the first da
1. A method for fabricating semiconductor memory device, comprising: providing a semiconductor substrate;forming a lower region, which includes a first data storage device, wherein the lower region is carried by the semiconductor substrate;forming a switching device, which is carried by the first data storage device; andforming an upper region, which includes a second data storage device, wherein the upper region is carried by the switching device; wherein the step of forming the first storage device includes forming a first electrode having a cylindrical or pillar shape, the first electrode being connected to the switching device. 2. The method of claim 1, wherein the step of forming the first data storage device includes forming a pillar shape pattern by depositing and planarizing an insulation film. 3. The method of claim 2, wherein the step of forming the first data storage device includes forming a first electrode by depositing a first metal and/or first poly-silicon film on the surface of the pillar shape pattern, and the depositing a dielectric film on the surface of the first electrode. 4. The method of claim 3, wherein the step of forming the first data storage device includes forming a second electrode by depositing second metal and/or second poly-silicon film on the surface of the dielectric film. 5. The method of claim 4, wherein the step of forming the first data storage device includes exposing a portion of the dielectric film, and depositing an insulation film on the exposed surface. 6. The method of claim 4, wherein the step of forming the second electrode includes using atomic layer deposition. 7. The method of claim 4, wherein the step of forming the second electrode includes depositing a metal material. 8. The method of claim 4, wherein the step of forming the second electrode includes depositing a poly-silicon material. 9. The method of claim 5, wherein the step of exposing the portion of the dielectric film includes using a spacer etching process, 10. The method of claim 3, wherein the step of depositing the dielectric film includes depositing one of aluminum oxide (Al2O3), hafnium oxide (HfO2) and zirconium oxide (ZrO2). 11. A method fir fabricating a semiconductor memory device, comprising: forming a first data storage device;coupling a semiconductor substrate to the first data storage device using a bonding layer;forming a switching device in response to etching, through the semiconductor substrate; andforming a second data storage device, wherein, the second data storage device is spaced from the first data storage device by the switching device. 12. The method of claim 11, wherein the switching device is a vertically oriented semiconductor device. 13. The method of claim 11, further including etching through the bonding, layer to form a first electrode. 14. The method of claim 13, further including forming a second electrode, wherein the second electrode is positioned between the switching device and second data storage device. 15. The method of claim 14, wherein the switching device extends between the first and second cylindrical electrodes. 16. A method for fabricating a semiconductor memory device, comprising: forming a first data storage device;coupling a semiconductor substrate to the first data storage device using a bonding layer;forming a switching device in response to etching through the semiconductor substrate;forming a first electrode in response to etching through the bonding layer; andforming a second data storage device, wherein the second data storage device is spaced from font the first data storage device by the switching device. 17. The method of claim 16, wherein the step of etching through the semiconductor substrate includes forming a stack of semiconductor layers. 18. The method of claim l7, wherein the stack of semiconductor layers is carried by the first electrode. 19. The method of claim 16, further including, forming a second electrode, wherein the second electrode is positioned between the switching device and second data storage device. 20. The method of claim 14, wherein the s witching device extends between the first and second cylindrical electrodes.
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