In embodiments, the present invention may attach at least two isolated electronic components to an elastomeric substrate, and arrange an electrical interconnection between the components in a boustrophedonic pattern interconnecting the two isolated electronic components with the electrical interconn
In embodiments, the present invention may attach at least two isolated electronic components to an elastomeric substrate, and arrange an electrical interconnection between the components in a boustrophedonic pattern interconnecting the two isolated electronic components with the electrical interconnection. The elastomeric substrate may then be stretched such that the components separate relative to one another, where the electrical interconnection maintains substantially identical electrical performance characteristics during stretching, and where the stretching may extend the separation distance between the electrical components to many times that of the unstretched distance.
대표청구항▼
1. A stretchable electrical interconnect, comprising: an electrical interconnect for coupling two electrical contacts, said electrical interconnect being arranged boustrophedonically to define rungs between said two electrical contacts, said rungs being substantially parallel with one another, and a
1. A stretchable electrical interconnect, comprising: an electrical interconnect for coupling two electrical contacts, said electrical interconnect being arranged boustrophedonically to define rungs between said two electrical contacts, said rungs being substantially parallel with one another, and a plurality of said rungs having substantially the same length and displacement therebetween, wherein the ratio of said length of said plurality of said rungs and said displacement between said plurality of said rungs is at least about 10:1. 2. The stretchable electrical interconnect of claim 1, wherein said rungs are substantially perpendicular to said contacts. 3. The stretchable electrical interconnect of claim 1, wherein the ratio is at least 100:1. 4. The stretchable electrical interconnect of claim 1, wherein said electrical interconnect maintains electrical integrity when the stretchable electrical interconnect is stretched. 5. The stretchable electrical interconnect of claim 4, wherein said electrical interconnect maintains electrical integrity when said displacement between said contacts is increased by 1000%. 6. The stretchable electrical interconnect of claim 4, wherein said electrical interconnect maintains electrical integrity when said displacement between said contacts is increased by 10000%. 7. The stretchable electrical interconnect of claim 4, wherein said electrical interconnect maintains electrical integrity when said displacement between said contacts is increased by 100000%. 8. The stretchable electrical interconnect of claim 1, wherein the electrical interconnect has a trace width ranging between 0.1-10 microns. 9. The stretchable electrical interconnect of claim 1, wherein the two electrical contacts are located on an elastomeric substrate. 10. The stretchable electrical interconnect of claim 9, wherein the electrical contacts are bonded to the elastomeric substrate, and wherein the electrical interconnect is not bonded to the substrate. 11. The stretchable electrical interconnect of claim 9, wherein the electrical contacts are semiconductor circuits. 12. The stretchable electrical interconnect of claim 9, wherein the electrical contacts are metal contacts. 13. A stretchable electrical interconnect, comprising: an electrical interconnect for coupling two electrical contacts, wherein said electrical interconnect is arranged boustrophedonically to define rungs between said two electrical contacts, wherein said electrical interconnect maintains electrical conductivity between the two electrical contacts when a displacement between the two electrical contacts is increased by about 1000%. 14. A device, comprising: a body having a stretchable surface; anda stretchable electronic circuit comprising: (i) a first discrete operative device;(ii) a second discrete operative device;(iii) a stretchable interconnect coupling said first discrete operative device to said second discrete operative device, said stretchable interconnect having a substantially boustrophedonic pattern, wherein said stretchable interconnect maintains electrical communication between the first discrete operative device and the second discrete operative device when said stretchable interconnect is stretched up to about 1000%, and wherein said stretchable electronic circuit is disposed on the stretchable surface of said body. 15. The device of claim 14, wherein the first discrete operative device or the second discrete operative device includes a metal contact. 16. The device of claim 14, wherein the first discrete operative device or the second discrete operative device is a semiconductor device. 17. The device of claim 14, wherein the first discrete operative device, the second discrete operative device, and the stretchable interconnect are all made from a same material. 18. The device of claim 17, wherein the same material is a semiconductor material. 19. The device of claim 14, wherein the stretchable interconnect is made from a semiconductor material. 20. The device of claim 19, wherein the first discrete operative device is formed from a semiconductor material, and wherein the stretchable interconnect is made from the same semiconductor material as the first discrete operative device. 21. The device of claim 20, wherein the semiconductor material is a single crystal semiconductor material. 22. The device of claim 14, wherein the stretchable interconnect is formed from a different material than the first discrete operative device. 23. The device of claim 14, wherein the first discrete operative device and the second discrete operative device are in contact with the stretchable surface, and wherein the stretchable interconnect is not in contact with the stretchable surface. 24. The device of claim 23, wherein a portion of the stretchable surface has a wavy profile.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (227)
Akiyama, Masahiko, Active matrix substrate and method of manufacturing the same.
Onozuka,Yutaka; Nakajima,Mitsuo; Hara,Yujiro; Hioki,Tsuyoshi; Akiyama,Masahiko, Active matrix substrate, method of manufacturing the same, and display device.
Gentile Christopher T. (New York NY) Wallace Michael (Beaverton OR) Avalon Timothy D. (Portland OR) Goodman Scott (Hermosa Beach CA) Fuller Richard (Sherman Oaks CA) Hall Tracy (Cupertino CA), Angular displacement sensors.
Mickelsen Reid A. (Bellevue WA) Chen Wen S. (Seattle WA), Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI2.
Amundson,Karl R.; Chen,Yu; Denis,Kevin L.; Drzaic,Paul S.; Kazlas,Peter T.; Ritenour,Andrew P., Backplanes for display applications, and components for use therein.
Branham Barry H. (Ballwin MO) Cox James L. (Ladue MO) Boineau John P. (Ladue MO) Schuessler Richard B. (Ballwin MO), Computerized three-dimensional cardiac mapping with interactive visual displays.
Abramson, Justin; Amundson, Karl R.; Danner, Guy M.; Duthaler, Gregg M.; Gates, Holly G.; Honeyman, Charles H.; Knaian, Ara N.; Morrison, Ian D.; O'Neil, Steven J.; Paolini, Jr., Richard J.; Pullen, , Electro-optic displays, and methods for driving same.
Credelle, Thomas Lloyd; Gengel, Glenn; Stewart, Roger Green; Joseph, William Hill, Electronic devices with small functional elements supported on a carrier.
James Gregory Bentsen ; Rolf Werner Biernath, Film based addressable programmable electronic matrix articles and methods of manufacturing and using the same.
Gazdik Charles E. (Endicott NY) McBride Donald G. (Binghamton NY) Seraphim Donald P. (Vestal NY) Toole Patrick A. (Westport CT), Full panel electronic packaging structure and method of making same.
Tachibana,Takeshi; Hayashi,Kazushi; Inoue,Kenichi; Yokota,Yoshihiro; Kobashi,Koji; Kawakami,Nobuyuki; Kobori,Takashi, Heat spreader and semiconductor device and package using the same.
Stewart Walter ; Jones Nicholas ; Schneider Wolfger, Helmet system including at least three accelerometers and mass memory and method for recording in real-time orthogonal.
Alleyne, Andrew; Barton, Kira; Mishra, Sandipan; Ferreira, Placid; Rogers, John, High resolution sensing and control of electrohydrodynamic jet printing.
Greenberg, Robert J.; Talbot, Neil Hamilton; Neysmith, Jordan Matthew; Ok, Jerry; Jiang, Honggang, Implantable microelectronic device and method of manufacture.
Noda, Wayne A.; Jones, Mike L.; Evans, Scott M.; Walker, Blair D.; Worthen, William J.; Gobin, Yves Pierre, Indwelling heat exchange catheter and method of using same.
Bassous Ernest (Riverdale NY) Kuhn Lawrence (Ossining NY) Taub Howard H. (Mount Kisco NY), Jet nozzle structure for electrohydrodynamic droplet formation and ink jet printing system therewith.
Chan Kevin Kok ; D'Emic Christopher Peter ; Jones Erin Catherine ; Solomon Paul Michael ; Tiwari Sandip, Method for making bonded metal back-plane substrates.
Cann Gordon L. (Laguna Beach) Shephard ; Jr. Cecil B. (Laguna Beach) McKevitt Frank X. (Anaheim Hills CA), Method for plasma deposition on apertured substrates.
Mech,Brian V.; Greenberg,Robert J.; DelMain,Gregory J., Method of forming an implantable electronic device chip level hermetic and biocompatible electronics package using SOI wafers.
Smith, John Stephen; Hadley, Mark A.; Craig, Gordon S. W.; Nealey, Paul F., Methods and apparatuses for improved flow in performing fluidic self assembly.
John Stephen Smith ; Mark A. Hadley ; Gordon S. W. Craig ; Frank Lowe, Methods for forming openings in a substrate and apparatuses with these openings and methods for creating assemblies with openings.
Bakhit Gabriel G. (Huntington Beach CA) Pillai Vincent A. (Irvine CA) Averkiou George (Upland CA) Trask Philip A. (Laguna Hills CA), Methods of forming two-sided HDMI interconnect structures.
William A. Clark ; Mark A. Lemkin ; Thor N. Juneau ; Allen W. Roessig, Microfabricated structures with trench-isolation using bonded-substrates and cavities.
Kang Sung-gyu,KRX ; Lee Ki Bang,KRX ; Choi Jae-joon,KRX ; Jeong Hee-moon,KRX, Multilayered wafer with thick sacrificial layer using porous silicon or porous silicon oxide and fabrication method thereof.
Scher, Erik; Buretea, Mihai A.; Chow, Calvin; Empedocles, Stephen; Meisel, Andreas; Parce, J. Wallace, Nanostructure and nanocomposite based compositions and photovoltaic devices.
Kolpe Vasant V. (Mendota Heights MN) Williams Paul M. (St. Paul MN), Noble metal-polymer composites and flexible thin-film conductors prepared therefrom.
Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao, Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp.
Gregg Duthaler ; Karl R. Amundson ; Paul S. Drzaic ; Peter T. Kazlas ; Jianna Wang, Preferred methods for producing electrical circuit elements used to control an electronic display.
Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn, Printable semiconductor structures and related methods of making and assembling.
Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn, Printable semiconductor structures and related methods of making and assembling.
Rogers, John A.; Kim, Tae Ho; Choi, Won Mook; Kim, Dae Hyeong; Meitl, Matthew; Menard, Etienne; Carlisle, John, Printable, flexible and stretchable diamond for thermal management.
Hara Kazukuni,JPX ; Tokura Norihito,JPX ; Miyajima Takeshi,JPX ; Fuma Hiroo,JPX ; Kano Hiroyuki,JPX, Process for producing a semiconductor device having a single thermal oxidizing step.
Rogers, John A.; Nuzzo, Ralph G.; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J., Release strategies for making transferable semiconductor structures, devices and device components.
Cole ; Jr. Herbert S. (Burnt Hills NY) Sitnik-Nieters Theresa A. (Scotia NY) Wojnarowski Robert J. (Ballston Lake NY) Lupinski John H. (Vienna VA), Reworkable high density interconnect structure incorporating a release layer.
Chen, Shiuh-Hui Steven; Garza, Raymond; Ross, Carl; Turalski, Stefan, Semiconductor wafer having a thin die and tethers and methods of making the same.
Maghribi,Mariam N.; Krulevitch,Peter A.; Wilson,Thomas S.; Hamilton,Julie K.; Park,Christina, Serpentine and corduroy circuits to enhance the stretchability of a stretchable electronic device.
Maghribi, Mariam N.; Krulevitch, Peter A.; Wilson, Thomas S.; Hamilton, Julie K.; Park, Christina, Serpentine and corduroy circuits to enhance the stretchablity of a stretchable electronic device.
Salerno Jack P. ; Zavracky Paul M. ; Spitzer Mark B. ; Dingle Brenda, Single crystal silicon arrayed devices with optical shield between transistor and substrate.
Acocella, John; Banks, Donald Ray; Benenati, Joseph Angelo; Caulfield, Thomas; Hoebener, Karl Grant; Watson, David P.; Corbin, Jr., John Saunders, Solder ball connections and assembly process.
Rogers, John A.; Khang, Dahl-Young; Sun, Yugang; Menard, Etienne, Stretchable form of single crystal silicon for high performance electronics on rubber substrates.
Bennett Tom D. (Shoreview MN) Combs William J. (Eden Prairie MN) Kallok ; Michael J. (New Brighton MN) Lee Brian B. (Golden Valley MN) Mehra Rahul (Stillwater MN) Klein George J. (London CAX), Subcutaneous multi-electrode sensing system, method and pacer.
Chang Mike F. ; Owyang King ; Hshieh Fwu-Iuan ; Ho Yueh-Se ; Dun Jowei ; Fusser Hans-Jurgen,DEX ; Zachai Reinhard,DEX, Surface mount and flip chip technology with diamond film passivation for total integated circuit isolation.
Beyer Klaus D. (Poughkeepsie NY) Hsieh Chang-Ming (Fishkill NY) Hsu Louis L. (Fishkill NY) Kotecki David E. (Hopewell Junction NY) Yuan Tsoring-Dih (Hopewell Junction NY), Thermal dissipation of integrated circuits using diamond paths.
Ikemizu,Dai; Kataoka,Emiko; Suzuki,Takatugu; Yoshida,Kazuya; Yamashita,Hiroyuki, Thermal transfer recording material and thermal transfer recording method.
Suzuki,Taro; Fukui,Daisuke; Fujita,Masahiro, Thermally transferable image protective sheet, method for protective layer formation, and record produced by said method.
Stone, Corbett W.; Hoey, Michael F.; Steinke, Tom A.; Michel, Raphael M.; Blanck, Arthur G., Tuned RF energy for selective treatment of atheroma and other target tissues and/or structures.
Hadley, Mark A.; Chiang, Ann; Craig, Gordon S. W.; Jacobsen, Jeffrey Jay; Smith, John Stephen; Tu, Jay; Stewart, Roger Green, Web fabrication of devices.
Jeffrey Jay Jacobsen ; Glenn Wilhelm Gengel ; Mark A. Hadley ; Gordon S. W. Craig ; John Stephen Smith, Web process interconnect in electronic assemblies.
Ghaffari, Roozbeh; Lee, Stephen; Work, John; Wright, Jr., John A.; Klinker, Lauren, Catheter or guidewire device including flow sensing and use thereof.
Ghaffari, Roozbeh; Lee, Stephen; Work, John; Wright, Jr., John A.; Klinker, Lauren, Catheter or guidewire device including flow sensing and use thereof.
Ghaffari, Roozbeh; Lee, Stephen; Work, John; Wright, Jr., John A.; Klinker, Lauren, Catheter or guidewire device including flow sensing and use thereof.
Li, Xia; Gupta, Sanjay; Dowling, Kevin J.; Kacyvenski, Isaiah; Ceruolo, Melissa; Ives, Barry G., Flexible temperature sensor including conformable electronics.
Elolampi, Brian David; Ghaffari, Roozbeh; de Graff, Bassel; Arora, William J.; Hu, Xiaolong, Method for fabricating a flexible electronic structure and a flexible electronic structure.
De Graff, Bassel; Ghaffari, Roozbeh; Arora, William J., Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy.
De Graff, Bassel; Ghaffari, Roozbeh; Arora, William J., Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.