Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/20
H01L-029/49
H01L-029/40
H01L-021/28
H01L-021/44
H01L-029/51
H01L-021/67
출원번호
US-0874708
(2013-05-01)
등록번호
US-9029253
(2015-05-12)
발명자
/ 주소
Milligan, Robert Brennan
Alokozai, Fred
출원인 / 주소
ASM IP Holding B.V.
대리인 / 주소
Snell & Wilmer LLP
인용정보
피인용 횟수 :
72인용 특허 :
150
초록▼
Nitrogen-containing phase-stabilized films, methods of forming phase-stabilized films, and structures and devices including the phase-stabilized films are disclosed. The phase-stabilized films include a matrix material and a phase stabilizer, which provides a morphologically stabilizing effect to a
Nitrogen-containing phase-stabilized films, methods of forming phase-stabilized films, and structures and devices including the phase-stabilized films are disclosed. The phase-stabilized films include a matrix material and a phase stabilizer, which provides a morphologically stabilizing effect to a matrix material within the films. The phase-stabilized films may be used as, for example, gate electrodes and similar films in microelectronic devices.
대표청구항▼
1. A cyclic deposition method of forming a phase-stabilized nitrogen-containing film comprising a solid solution having a stoichiometric ratio of MmzxMs(z-x)X, where Mmzx and Ms(z-x) are transition metals, one belonging to Group V, another belonging either to Group IV or to Group VI of Periodic Tabl
1. A cyclic deposition method of forming a phase-stabilized nitrogen-containing film comprising a solid solution having a stoichiometric ratio of MmzxMs(z-x)X, where Mmzx and Ms(z-x) are transition metals, one belonging to Group V, another belonging either to Group IV or to Group VI of Periodic Table, x varies in a range from greater than 0 to less than 1 and z varies in a range from greater than x to 1, wherein the phase-stabilized nitrogen-containing film comprises a matrix material and a phase stabilizer within the solid solution, wherein the phase-stabilized nitrogen-containing film is formed on a substrate within a reactor by exposing the substrate to a pulse of a matrix material precursor and a phase stabilizer precursor, removing an unreacted matrix material precursor and an unreacted phase stabilizer precursor from the reactor, exposing the substrate to a pulse of a nitrogen-containing reactant, and removing an unreacted nitrogen-containing reactant from the reactor, and wherein the phase stabilizer stabilizes the matrix material in a solution phase that is different from a native phase of the matrix material that would be formed under identical film formation conditions. 2. The cyclic deposition method of forming the phase-stabilized nitrogen-containing film of claim 1, wherein the matrix material comprises a metal nitride. 3. The cyclic deposition method of forming the phase-stabilized nitrogen-containing film of claim 1, wherein the matrix material comprises a metal nitride with Group V transition metal. 4. The cyclic deposition method of forming the phase-stabilized nitrogen-containing film of claim 1, wherein the phase stabilizer comprises one or more transition metals selected from the Group IV or from Group VI. 5. The cyclic deposition method of forming the phase-stabilized nitrogen-containing film of claim 1, wherein MmzxMs(z-x)X comprises TaxTi(1-x)N. 6. The cyclic deposition method of forming the phase-stabilized nitrogen-containing film of claim 1, wherein the matrix material determines one or more electrical properties of the phase- stabilized nitrogen-containing film. 7. The cyclic deposition method of forming the phase-stabilized nitrogen-containing film of claim 1, wherein the matrix material determines a work function of the phase-stabilized nitrogen-containing film. 8. The cyclic deposition method of forming the phase-stabilized nitrogen-containing film of claim 1, wherein the phase stabilizer affects morphological characteristics of the phase-stabilized nitrogen-containing film. 9. A method of forming a semiconductor structure, comprising a gate dielectric material and a gate electrode overlying the gate dielectric material, wherein the gate electrode comprising a solid solution having a stoichiometric ratio of MmzxMs(z-x)X, where Mmzx and Ms(z-x) are transition metals, one belonging to Group V, another belonging either to Group IV or Group VI of Periodic Table, x varies in a range from greater than 0 to less than 1 and z varies in a range from greater than x to 1, the solid solution comprising a phase stabilizer that stabilizes a metal nitride in a solution phase that is different from a native phase of the metal nitride that would be formed under identical formation conditions, wherein the solid solution is formed on a substrate within a reactor via a cyclic deposition process by exposing the substrate to a pulse of a matrix material precursor and a phase stabilizer precursor, removing an unreacted matrix material precursor and an unreacted phase stabilizer precursor from the reactor, exposing the substrate to a pulse of a nitrogen-containing reactant, and removing an unreacted nitrogen-containing reactant from the reactor. 10. The method of forming the semiconductor structure of claim 9, wherein the metal nitride comprises one or more transition metals selected from Group V of Periodic Table. 11. The method of forming the semiconductor structure of claim 9, wherein the phase stabilizer comprises one or more transition metals selected from Group IV or from Group VI of Periodic Table.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (150)
Raaijmakers, Ivo, Apparatus and method for growth of a thin film.
Kopacz Stanislaw ; Webb Douglas Arthur ; Leusink Gerrit Jan ; LeBlanc Rene Emile ; Ameen Michael S. ; Hillman Joseph Todd ; Foster Robert F. ; Rowan ; Jr. Robert Clark, Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions.
Stanislaw Kopacz ; Douglas Arthur Webb ; Gerrit Jan Leusink ; Rene Emile LeBlanc ; Michael S. Ameen ; Joseph Todd Hillman ; Robert F. Foster ; Robert Clark Rowan, Jr., Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions.
Zhao Jun ; Sinha Ashok ; Tepman Avi ; Chang Mei ; Luo Lee ; Schreiber Alex ; Sajoto Talex ; Wolff Stefan ; Dornfest Charles ; Danek Michal, Apparatus for substrate processing with improved throughput and yield.
Patrick Leahey ; Jerry C. Chen ; Richard E. Remington ; Simon Yavelberg ; Timothy Driscoll ; Robert E. Ryan ; Brian Hatcher ; Rolf Guenther ; Xueyu Qian, Closed-loop dome thermal control apparatus for a semiconductor wafer processing system.
Craig R. Metzner ; Turgut Sahin ; Gregory F. Redinbo ; Pravin K. Narwankar ; Patricia M. Liu, Deposition reactor having vaporizing, mixing and cleaning capabilities.
Ogliari, Vincenzo; Pozzetti, Vittorio; Preti, Franco, Device and method for handling substrates by means of a self-leveling vacuum system in epitaxial induction.
Numakura, Masahiro, Device for controlling processing system, method for controlling processing system and computer-readable storage medium stored processing program.
Barr Thomas Aloysius ; Barr Christopher Velton ; Elliott James Charles ; Frew Dirk Alan, Method and apparatus for aligning and supporting semiconductor process gas delivery and regulation components.
Jevtic Dusan, Method and apparatus for automatically generating schedules for wafer processing within a multichamber semiconductor wafer processing tool.
Venkatesh Srilakshmi ; Jevtic Dusan, Method and apparatus for scheduling wafer processing within a multiple chamber semiconductor wafer processing tool having a multiple blade robot.
Gregg, John N.; Battle, Scott L.; Banton, Jeffrey I.; Naito, Donn K.; Laxman, Ravi K., Method and apparatus to help promote contact of gas with vaporized material.
Ji,Bing; Motika,Stephen Andrew; Pearlstein,Ronald Martin; Karwacki, Jr.,Eugene Joseph; Wu,Dingjun, Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials.
Jeon,Joong S.; Clark Phelps,Robert B.; Xiang,Qi; Zhong,Huicai, Method for forming a thin, high quality buffer layer in a field effect transistor and related structure.
Yun-sook Chae KR; In-sang Jeon KR; Sang-bom Kang KR; Sang-in Lee KR; Kyu-wan Ryu KR, Method of delivering gas into reaction chamber and shower head used to deliver gas.
Kang Sang-bom,KRX ; Lim Hyun-seok,KRX ; Chae Yung-sook,KRX ; Jeon In-sang,KRX ; Choi Gil-heyun,KRX, Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor.
Agarwala, Birendra N.; Dalal, Hormazdyar Minocher; Liniger, Eric G.; Llera-Hurlburt, Diana; Nguyen, Du Binh; Procter, Richard W.; Rathore, Hazara Singh; Tian, Chunyan E.; Engel, Brett H., Method of making an edge seal for a semiconductor device.
Price J. B. (Scottsdale AZ) Tobin Philip J. (Scottsdale AZ) Pintchovski Fabio (Mesa AZ) Seelbach Christian A. (San Jose CA), Method of producing titanium nitride MOS device gate electrode.
Rubin Richard H. (Fairfield NJ) Petrone Benjamin J. (Netcong NJ) Heim Richard C. (Mountain View CA) Pawenski Scott M. (Wappingers Falls NY), Modular processing apparatus for processing semiconductor wafers.
Umotoy Salvador P. ; Lei Lawrence C. ; Nguyen Anh N. ; Chiao Steve H., One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system.
deBoer Wiebe B. (Kromme Molenweg 10 5521 GB Eersel OR NLX) Ozias Albert E. (7515 Poet Rd. ; S.E. Aumsville OR 97325), Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment.
Kang, Sang-bom; Lim, Hyun-seok; Chae, Yung-sook; Jeon, In-sang; Choi, Gil-heyun, Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors.
Fujikawa Yuichiro (Yamanashi-ken JPX) Hatano Tatsuo (Yamanashi-ken JPX) Murakami Seishi (Yamanashi-ken JPX), Shower head and film forming apparatus using the same.
Adomaitis, Raymond A.; Kidder, Jr., John N.; Rubloff, Gary W., Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation.
Raisanen, Petri; Sung-hoon, Jung; Mohith, Verghese, Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species.
Shero, Eric J.; Raisanen, Petri I.; Jung, Sung-Hoon; Wang, Chang-Gong, Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species.
Shero, Eric; Raisanen, Petri I.; Jung, Sung Hoon; Wang, Chang-Gong, Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species.
Lubomirsky Dmitry ; D'ambra Allen I. ; Floyd Edward L ; Liang Qiwei ; Hoffman Daniel J ; Fuentes Victor H ; Yavelberg Simon ; Chen Jerry C, Temperature control system for process chamber.
MacCracken Thomas G. (Van Alstyne TX) MacCracken Janet (Van Alstyne TX) MacCracken Richard E. (Dallas TX) Rice Millard B. (Plano TX), Temperature controlled insulation system.
Guy T. Blalock ; Hugh E. Stroupe ; Brian F. Gordon, Wafer planarization using a uniform layer of material and method and apparatus for forming uniform layer of material used in semiconductor processing.
den Hartog Besselink, Edwin; Garssen, Adriaan; Dirkmaat, Marco, Cassette holder assembly for a substrate cassette and holding member for use in such assembly.
Hawkins, Mark; Halleck, Bradley Leonard; Kirschenheiter, Tom; Hossa, Benjamin; Pottebaum, Clay; Miskys, Claudio, Gas distribution system, reactor including the system, and methods of using the same.
Pore, Viljami; Knaepen, Werner; Jongbloed, Bert; Pierreux, Dieter; Van Aerde, Steven R. A.; Haukka, Suvi; Fukuzawa, Atsuki; Fukuda, Hideaki, Method and apparatus for filling a gap.
Zaitsu, Masaru; Kobayashi, Nobuyoshi; Kobayashi, Akiko; Hori, Masaru; Kondo, Hiroki; Tsutsumi, Takayoshi, Method of cyclic dry etching using etchant film.
Knaepen, Werner; Maes, Jan Willem; Jongbloed, Bert; Kachel, Krzysztof Kamil; Pierreux, Dieter; De Roest, David Kurt, Method of forming a structure on a substrate.
Lee, Choong Man; Yoo, Yong Min; Kim, Young Jae; Chun, Seung Ju; Kim, Sun Ja, Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method.
Chun, Seung Ju; Yoo, Yong Min; Choi, Jong Wan; Kim, Young Jae; Kim, Sun Ja; Lim, Wan Gyu; Min, Yoon Ki; Lee, Hae Jin; Yoo, Tae Hee, Method of processing a substrate and a device manufactured by using the method.
Raisanen, Petri; Givens, Michael Eugene, Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures.
Xie, Qi; de Roest, David; Woodruff, Jacob; Givens, Michael Eugene; Maes, Jan Willem; Blanquart, Timothee, Source/drain performance through conformal solid state doping.
Sarin, Michael Christopher; Mendez, Rafael; Bartlett, Gregory M.; Hill, Eric; Lawson, Keith R.; Rosser, Andy, Systems and methods for mass flow controller verification.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.