[특허]Thickness shear mode resonator sensors and methods of forming a plurality of resonator sensors

Thickness shear mode resonator sensors and methods of forming a plurality of resonator sensors 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H04R-031/00 G01L-009/00
출원번호	US-0350577 (2012-01-13)
등록번호	US-9038263 (2015-05-26)
발명자 / 주소	Puccio, Derek Wayne EerNisse, Errol P.
출원인 / 주소	Delaware Capital Formation, Inc.
대리인 / 주소	TraskBritt
인용정보	피인용 횟수 : 0 인용 특허 : 48

초록 ▼

Arrays of resonator sensors include an active wafer array comprising a plurality of active wafers, a first end cap array coupled to a first side of the active wafer array, and a second end cap array coupled to a second side of the active wafer array. Thickness shear mode resonator sensors may include an active wafer coupled to a first end cap and a second end cap. Methods of forming a plurality of resonator sensors include forming a plurality of active wafer locations and separating the active wafer locations to form a plurality of discrete resonator sensors. Thickness shear mode resonator sensors may be produced by such methods.

대표청구항 ▼

1. A plurality of thickness shear mode resonator sensors produced by a process, comprising: forming a plurality of active wafer locations in a first sheet of material comprising: locating a central portion of each active wafer of the plurality of active wafer locations; andbounding the plurality of active wafer locations about the central portions thereof to form a first cavity on a first side of each central portion and a second cavity on a second side of each central portion to form an array of resonator sensors; andseparating the array of resonator sensors. 2. The plurality of thickness shear mode resonator sensors of claim 1, wherein forming a plurality of active wafer locations in a first sheet of material further comprises forming the central portion in each active wafer location of the plurality of active wafer locations to have a thickness less than a thickness of an outer portion of the active wafer location. 3. The plurality of thickness shear mode resonator sensors of claim 1, wherein bounding the plurality of active wafer locations about the central portions thereof and over the first and second cavities on the first side and on the second side comprises: coupling a first side of the first sheet of material to a second sheet of material comprising a plurality of first end caps to cover the first side of the plurality of active wafer locations; andcoupling a second side of the first sheet of material to a third sheet of material comprising a plurality of second end caps to cover the second side of the plurality of active wafer locations. 4. The plurality of thickness shear mode resonator sensors of claim 3, wherein coupling a first side of the first sheet of material to a second sheet of material and coupling a second side of the first sheet of material to a third sheet of material comprises coupling with a fused glass frit. 5. The plurality of thickness shear mode resonator sensors of claim 1, further comprising forming the plurality of resonator sensors to each exhibit a substantially quadrilateral cross section. 6. The plurality of thickness shear mode resonator sensors of claim 1, further comprising forming the plurality of resonator sensors to each exhibit a substantially cylindrical cross section. 7. A method of forming a plurality of resonator sensors, comprising: forming a plurality of active wafer locations in a unitary structure;coupling a plurality of first end cap structures to a first side of the unitary structure;coupling a plurality of second end cap structures to a second, opposing side of the unitary structure; andseparating the plurality of active wafer locations laterally between the end cap structures to form a plurality of discrete resonator sensors. 8. A method of forming a plurality of resonator sensors, comprising: forming a plurality of active wafer locations in a first sheet of material comprising: locating a central portion of each active wafer of the plurality of active wafer locations;bounding the plurality of active wafer locations about the central portions thereof to form a first cavity on a first side of each central portion and a second cavity on a second side of each central portion to form an array of resonator sensors; andseparating the array of resonator sensors to form a plurality of discrete resonator sensors. 9. The method of claim 8, wherein forming a plurality of active wafer locations in a first sheet of material further comprises forming the central portion in each active wafer location of the plurality of active wafer locations to have a thickness less than a thickness of an outer portion of the active wafer location. 10. The method of claim 8, wherein bounding the plurality of active wafer locations about the central portions thereof and over the first and second cavities on the first side and on the second side comprises: coupling a first side of the first sheet of material to a second sheet of material comprising a plurality of first end caps to cover the first side of the plurality of active wafer locations; andcoupling a second side of the first sheet of material to a third sheet of material comprising a plurality of second end caps to cover the second side of the plurality of active wafer locations and to form an array of resonator sensors. 11. The method of claim 8, wherein separating the array of resonator sensors comprises separating the array of resonator sensors along a plane transverse to an interface between the first sheet of material and at least one of the second sheet of material and the third sheet material. 12. The method of claim 8, wherein forming a plurality of active wafer locations in a first sheet of material further comprises: forming a first electrode on the central portion of each active wafer location of the plurality of active wafer locations on the first side of the first sheet of material;extending the first electrode to a conductive tab formed on an outer portion of each active wafer location of the plurality of active wafer locations on the first side of the first sheet of material;forming a second electrode on the central portion of each active wafer location of the plurality of active wafer locations on the second side of the first sheet of material; andextending the second electrode to a conductive tab formed on an outer portion of each active wafer location of the plurality of active wafer locations on the second side of the first sheet of material. 13. The method of claim 12, further comprising: providing at least one recess in an interface between the first sheet of material and the second sheet of material to expose a conductive tab formed on at least one active wafer location of the plurality of active wafer locations; andproviding at least one recess in an interface between the first sheet of material and the third sheet of material to expose another conductive tab formed on at least one active wafer location of the plurality of active wafer locations. 14. The method of claim 8, wherein forming a plurality of active wafer locations in a first sheet of material further comprises forming the plurality of active wafer locations in a quartz plate.

이 특허에 인용된 특허 (48)

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EerNisse Errol P. (Salt Lake City UT) Ward Roger W. (Park City UT), Crystal resonator with low acceleration sensitivity and method of manufacture thereof.
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Sinha Bikash K. ; Niwa Masaru,JPX ; Matsumoto Noriyuki,JPX ; Sudo Yukio,JPX, Dual-mode thickness-shear quartz pressure sensors for high pressure and high temperature applications.
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Murayama, Takashi, Heat dissipation member, semiconductor apparatus and semiconductor light emitting apparatus.
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EerNisse ; Errol P. ; Land ; Cecil E. ; Snelling ; Jay B., Input apparatus for dynamic signature verification systems.
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Matsumoto, Noriyuki, Low cost resonator-based pressure transducer.
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Vig, John R.; Ballato, Arthur, Method of making miniature high frequency SC-cut quartz crystal resonators.
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EerNisse Errol P. (Salt Lake City UT) Ward Roger W. (Park City UT) Wood O. Lew (Murray UT), Method of manufacturing crystal resonators having low acceleration sensitivity.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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Thickness shear mode resonator sensors and methods of forming a plurality of resonator sensors 원문보기

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Thickness shear mode resonator sensors and methods of forming a plurality of resonator sensors 원문보기

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