초록 ▼

A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; form

A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.

대표청구항 ▼

1. A method for forming doping regions, comprising: providing a substrate;forming a doping material on the substrate;forming at least one patterned covering layer on a portion of the surface of the doping material, wherein the portion of the doping material is covered by the at least one patterned c

1. A method for forming doping regions, comprising: providing a substrate;forming a doping material on the substrate;forming at least one patterned covering layer on a portion of the surface of the doping material, wherein the portion of the doping material is covered by the at least one patterned covering layer, and another portion of the doping material not covered by the at least one patterned covering layer is exposed; andperforming a thermal diffusion process to diffuse the doping material into the substrate, forming a first doping region in a portion of the substrate underlying the at least one patterned covering layer and forming a second doping region in a portion of the substrate not covered by the at least one patterned covering layer, wherein the doping concentration of the first doping region is greater than the doping concentration of the second doping region. 2. The method for forming doping regions as claimed in claim 1, wherein the at least one patterned covering layer is SiNx or Al2O3. 3. The method for forming doping regions as claimed in claim 1, wherein the doping material is a boride, aluminide, gallide, phosphide, arsenide, or telluride. 4. The method for forming doping regions as claimed in claim 3, wherein the step of forming the doping material on the substrate comprises: coating a doping material on a substrate; andperforming a thermal process for the doping material to convert to a solid-state compound. 5. The method for forming doping regions as claimed in claim 1, wherein the step of forming the at least one patterned covering layer comprises screen printing or spray coating.