초록 ▼

A microelectronic image sensor assembly for backside illumination and method of making same are provided. The assembly includes a microelectronic element having contacts exposed at a front face and light sensing elements arranged to receive light of different wavelengths through a rear face. A semic

A microelectronic image sensor assembly for backside illumination and method of making same are provided. The assembly includes a microelectronic element having contacts exposed at a front face and light sensing elements arranged to receive light of different wavelengths through a rear face. A semiconductor region has an opening overlying at least one of first and second light sensing elements, the semiconductor region having a first thickness between the first light sensing element and the rear face and a second thickness between the second light sensing element and the rear face. A light-absorbing material overlies the semiconductor region within the opening above at least one of the light sensing elements such that the first and second light sensing elements receive light of substantially the same intensity.

대표청구항 ▼

1. A microelectronic image sensor assembly, comprising: a microelectronic element having a front face, contacts exposed at the front face, a semiconductor region having a first surface adjacent the front face, and the microelectronic element having a rear face remote from the front face, and substan

1. A microelectronic image sensor assembly, comprising: a microelectronic element having a front face, contacts exposed at the front face, a semiconductor region having a first surface adjacent the front face, and the microelectronic element having a rear face remote from the front face, and substantially identical first and second light sensing elements arranged on a planar circuitry portion of the semiconductor region to receive light of first and second different wavelengths, respectively, through the rear face,wherein the semiconductor region has an opening overlying at least the second light sensing element such that the semiconductor region has a first thickness between the first light sensing element and the rear face and a second thickness less than the first thickness between the second light sensing element and the rear face, and wherein the planar circuitry portion is disposed between the light sensing elements and the front face and is configured to electrically couple the light sensing elements to the contacts,the microelectronic element further including a light-absorbing material overlying the semiconductor region at least within the opening above the second light sensing element, the light-absorbing material having a higher light absorption value per unit depth for absorbing light of at least the second wavelength than the semiconductor region, the first and second thicknesses and the light-absorbing material being selected such that the light of the first and second different wavelengths are able to pass through the semiconductor region and/or the light-absorbing material and reach the first and second light sensing elements with substantially the same intensity. 2. The assembly of claim 1, further comprising an antireflective coating overlying the rear face of the semiconductor region, wherein the light-absorbing material overlies the antireflective coating. 3. The assembly of claim 1, wherein the first and second different wavelengths correspond to different colors of light selected from the group consisting of red, blue, and green. 4. The assembly of claim 1, wherein a surface of the semiconductor region is exposed at the rear face of the microelectronic element and the light-absorbing material is at least substantially co-planar with the surface of the semiconductor region. 5. The assembly of claim 1, further comprising a third light sensing element arranged to receive light of a third wavelength different from the first and second wavelengths through the rear face, wherein the semiconductor region has a third thickness between the third light sensing element and the rear face which is less than the second thickness,wherein the light-absorbing material overlies the semiconductor region above the third light sensing element and has a higher light absorption value per unit depth for absorbing light of the third wavelength than the semiconductor region,such that the third light sensing element is arranged to receive the light having the third wavelength with substantially the same intensity as each of the first and second light sensing elements are arranged to receive the first and second wavelengths, respectively. 6. The assembly of claim 5, wherein the first, second, and third wavelengths correspond to different colors selected from the group consisting of red, blue, and green. 7. The assembly of claim 6, wherein the first wavelength of light corresponds to blue light. 8. The assembly of claim 7, wherein the second wavelength of light corresponds to green light and the third wavelength corresponds to red light, and wherein the first thickness is more than 5 times the third thickness and the second thickness is at least 1.5 times the third thickness. 9. The assembly of claim 1, wherein the second thickness is zero. 10. The assembly of claim 1, wherein: the light-absorbing material is arranged to reduce an amount of light passed to one or more of the light sensing elements; andthe semiconductor region comprises rounded portions and/or slanted surfaces adjacent each edge of at least the second light sensing element. 11. The assembly of claim 1, further comprising a substrate mounted to the front face of the microelectronic element, the substrate having a coefficient of thermal expansion of less than 10 parts per million/° C. (“ppm/° C.”), and conductive elements extending from the contacts of the microelectronic element through the substrate and exposed at a surface of the substrate remote from the microelectronic element, the conductive elements including unit contacts. 12. The assembly of claim 1, further including a color filter array including at least a first filter and a second filter overlying the first and second light sensing elements, respectively, the first and second filters having first and second different passbands selecting the first and second wavelengths, respectively. 13. The assembly of claim 12, wherein the first and second wavelengths correspond to different ones of: red, blue, or green wavelengths. 14. The assembly of claim 12, further including an array of microlenses including first and second microlenses overlying the first and second filters, respectively. 15. The assembly of claim 14, further including a transparent cover overlying the microlenses, a cavity being disposed between the transparent cover and the microlenses. 16. The assembly of claim 1, further comprising one or more other electronic components electrically connected to the assembly. 17. The assembly of claim 16, further comprising a housing, wherein the assembly and the other electronic components are mounted to the housing. 18. A method of making a microelectronic image sensor assembly, comprising: patterning a rear face of a semiconductor region of a microelectronic element having contacts exposed at a front face of the microelectronic element opposite the rear face, the microelectronic element having substantially identical first and second light sensing elements adjacent the front face, the first and second light sensing elements arranged on a planar circuitry portion of the semiconductor region to receive light of first and second different wavelengths, respectively, through the rear face,the patterning performed such that the semiconductor region has an opening overlying at least the second light sensing element, such that the semiconductor region has a first thickness overlying the first light sensing element and a second thickness less than the first thickness overlying the second light sensing element, and such that the planar circuitry portion is disposed between the light sensing elements and the front face and is configured to electrically couple the light sensing elements to the contacts; andforming a light-absorbing material region at least within the opening above the second light sensing element, the light-absorbing material having a higher light absorption value per unit depth for absorbing light of at least the second wavelength than the semiconductor region, the first and second thicknesses and the light-absorbing material being selected such that the light of the first and second different wavelengths are able to pass through the semiconductor region and/or the light-absorbing material and reach the first and second light sensing elements with substantially the same intensity. 19. The method of claim 18, further comprising forming an antireflective coating overlying the semiconductor region prior to the step of forming the light-absorbing material region, wherein the light-absorbing material region is formed over at least a portion of the antireflective coating. 20. The method of claim 18, wherein the first and second wavelengths correspond to different colors of light selected from the group consisting of red, blue, and green. 21. The method of claim 18, wherein the step of patterning includes forming a first opening overlying the first and second light sensing elements and then from within the first opening forming a second opening overlying the second light sensing element. 22. The method of claim 18, wherein the microelectronic element includes a third light sensing element arranged to receive light of a third wavelength different from the first and second wavelengths through the rear face, wherein the step of patterning the semiconductor region is performed such that the semiconductor region has a third thickness less than the second thickness between the third light sensing element and the rear face,and the step of forming the light-absorbing material region forms at least a portion of the light-absorbing material region overlying the third light sensing element, the light-absorbing material having a higher light absorption value per unit depth for absorbing light of the third wavelength than the semiconductor region,such that the third light sensing element is arranged to receive the light having the third wavelength with substantially the same intensity as each of the first and second light sensing elements are arranged to receive the first and second wavelengths, respectively. 23. The method of claim 22, wherein the first, second, and third wavelengths correspond to different colors selected from the group consisting of red, blue, and green. 24. The method of claim 18, wherein: the step of forming the light-absorbing material region includes forming the light-absorbing material to reduce an amount of light passed to one or more of the light sensing elements; andthe step of patterning the rear face of the semiconductor region comprises patterning rounded portions and/or slanted surfaces adjacent each edge of at least the second light sensing element. 25. The method of claim 18, further comprising mounting a substrate to the front face of the microelectronic element, the substrate having a coefficient of thermal expansion of less than 10 parts per million/° C. (“ppm/° C.”), andforming conductive elements extending from the contacts of the microelectronic element through the substrate and exposed at a surface of the substrate remote from the microelectronic element, the conductive elements including unit contacts. 26. The method of claim 18, further including providing a color filter array including at least a first filter and a second filter overlying the first and second light sensing elements, respectively, the first and second filters having first and second different passbands selecting the first and second wavelengths, respectively. 27. The method of claim 26, wherein the first and second wavelengths correspond to different ones of: red, blue, or green wavelengths. 28. The method of claim 26, further comprising forming an array of microlenses including first and second microlenses overlying the first and second filters, respectively. 29. The method of claim 28, further comprising mounting a transparent cover overlying the microlenses, a cavity being disposed between the transparent cover and the microlenses.