Method for inhibiting oxygen and moisture degradation of a device and the resulting device
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B05D-005/00
C03C-003/12
C03C-003/14
C03C-003/247
H01L-051/52
출원번호
US-0223380
(2014-03-24)
등록번호
US-9050622
(2015-06-09)
발명자
/ 주소
Aitken, Bruce Gardiner
Lewis, Mark Alan
Quesada, Mark Alejandro
출원인 / 주소
Corning Incorporated
대리인 / 주소
Hardee, Ryan T.
인용정보
피인용 횟수 :
4인용 특허 :
74
초록▼
A method for inhibiting oxygen and moisture degradation of a device and the resulting device are described herein. To inhibit the oxygen and moisture degradation of the device, a low liquidus temperature (LLT) material which typically has a low low liquidus temperature (or in specific embodiments a
A method for inhibiting oxygen and moisture degradation of a device and the resulting device are described herein. To inhibit the oxygen and moisture degradation of the device, a low liquidus temperature (LLT) material which typically has a low low liquidus temperature (or in specific embodiments a low glass transition temperature) is used to form a barrier layer on the device. The LLT material can be, for example, tin fluorophosphate glass, chalcogenide glass, tellurite glass and borate glass. The LLT material can be deposited onto the device by, for example, sputtering, evaporation, laser-ablation, spraying, pouring, frit-deposition, vapor-deposition, dip-coating, painting or rolling, spin-coating or any combination thereof. Defects in the LLT material from the deposition step can be removed by a consolidation step (heat treatment), to produce a pore-free, gas and moisture impenetrable protective coating on the device. Although many of the deposition methods are possible with common glasses (i.e. high melting temperature glasses like borate silicate, silica, etc.), the consolidation step is only practical with the LLT material where the consolidation temperature is sufficiently low so as to not damage the inner layers in the device.
대표청구항▼
1. A method for sealing a device comprising the steps of: depositing a starting low liquidus temperature inorganic material over at least a portion of said device; andheat treating said deposited low liquidus temperature inorganic material that is deposited over said at least a portion of said devic
1. A method for sealing a device comprising the steps of: depositing a starting low liquidus temperature inorganic material over at least a portion of said device; andheat treating said deposited low liquidus temperature inorganic material that is deposited over said at least a portion of said device in an oxygen and water free environment,wherein said heat treating step is performed in a vacuum or an inert environment and at a temperature which does not damage components in said device. 2. The method of claim 1, wherein the deposited low liquidus temperature inorganic material and the heat treated low liquidus temperature inorganic material have a higher low liquidus temperature than the starting low liquidus temperature inorganic material. 3. The method of claim 1, wherein the deposited low liquidus temperature inorganic material and the heat treated low liquidus temperature inorganic material have a same low liquidus temperature as the starting low liquidus temperature inorganic material. 4. The method of claim 1, wherein said low liquidus temperature inorganic material is a tin-fluorophosphate material. 5. The method of claim 4, wherein said tin-fluorophosphate material has the following composition: Sn (20-85 wt %);P (2-20 wt %);O (10-36 wt %);F (10-36 wt %);Nb (0-5 wt %); andat least 75% total of Sn+P+O+F. 6. The method of claim 1, wherein said low liquidus temperature inorganic material is one of the following, or any combination thereof: tin-fluorophosphate material;chalcogenide material;tellurite material;borate material; andphosphate material. 7. The method of claim 1, wherein said low liquidus temperature inorganic material has a liquidus temperature ≦1000° C. 8. The method of claim 1, wherein said low liquidus temperature inorganic material has a liquidus temperature ≦600° C. 9. The method of claim 1, wherein said low liquidus temperature inorganic material has a liquidus temperature ≦400° C. 10. The method of claim 1, wherein said low liquidus temperature inorganic material is one of the following, or any combination thereof: chalcogenide material;tellurite material; andborate material. 11. The method of claim 1, wherein said low liquidus temperature inorganic material is one of the following, or any combination thereof: tellurite material; andborate material. 12. A method for sealing a device comprising the steps of: depositing a starting low liquidus temperature inorganic material over at least a portion of said device; andheat treating said deposited low liquidus temperature inorganic material that is deposited over said at least a portion of said device in an oxygen and water free environment,wherein said heat treating step is performed in a vacuum or an inert environment and at a temperature which does not damage components in said device,wherein said low liquidus temperature inorganic material is a tin-fluorophosphate material having the following composition: Sn (20-85 wt %), P (2-20 wt %), O (10-36 wt %), F (10-36 wt %), Nb (0-5 wt %), and at least 75% total of Sn+P+0+F, andwherein said low liquidus temperature inorganic material has a liquidus temperature ≦1000° C.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (74)
Ando Eiichi (Yokohama JPX) Suzuki Koichi (Yokohama JPX) Ebisawa Junichi (Tokyo JPX) Suzuki Susumu (Kawasaki JPX), Amorphous oxide film and article having such film thereon.
Yamada,Jiro; Sasaoka,Tatsuya; Sekiya,Mitsunobu; Sano,Naoki; Chiba,Yasuhiro; Hirano,Takashi; Iwase,Yuichi, Display apparatus and method for fabricating the same.
Graff, Gordon L.; Gross, Mark E.; Affinito, John D.; Shi, Ming-Kun; Hall, Michael; Mast, Eric, Environmental barrier material for organic light emitting device and method of making.
Phillips Roger W. (Santa Rosa CA) Shevlin Craig M. (Santa Rosa CA) Matteucci John S. (Healdsburg CA), Flexible polymer film with vapor impermeable coating.
Bailey Richard A., Hydrogen barrier encapsulation techniques for the control of hydrogen induced degradation of ferroelectric capacitors in conjunction with multilevel metal processing for non-volatile integrated circu.
Hanada Toru,JPX ; Yahata Kazuo,JPX ; Tamura Yuji,JPX, Liquid crystal display element with a transparent electrode substrate, and the transparent electrode substrate.
Hinata Shoji (Suwa JPX) Ono Yoichi (Suwa JPX) Tsukahara Akira (Suwa JPX) Hosogaya Hiroyuki (Suwa JPX) Imazeki Yoshikatsu (Suwa JPX) Fujisawa Shinji (Suwa JPX) Furukawa Yoko (Suwa JPX), Liquid crystal display element, methods of producing and storing the same, and electronic equipment on which the same is.
Jean-Pierre Tahon BE; Bart Verlinden BE; Luc Leenders BE; Rudi Goedeweeck BE, Method for making an electric or electronic module comprising a glass laminate.
Walther Marten,DEX ; Heming Martin,DEX ; Spallek Michael,DEX ; Zschaschler Gudrun,DEX, Method of making a vessel having a wall surface having a barrier coating.
Kuehnle Manfred R. (Waldesruh P.O. Box 1020 ; Rte. 103A New London NH 03257) Hagenlocher Arno K. (Santa Rosa CA) Schuegraf Klaus (Rancho Palos Verdes CA), Method of protecting an organic surface by deposition of an inorganic refractory coating thereon.
Croswell Robert T. ; Reisman Arnold ; Simpson Darrell L. ; Temple Dorota ; Williams C. Kenneth, Methods of raising reflow temperature of glass alloys by thermal treatment in steam, and microelectronic structures formed thereby.
Allen Scott I. (Newark OH) Ferguson Michael (Granville OH) Tung Harvey (Newark OH), Multilayer barrier film for transdermal drug delivery system and ostomy applications.
Gibbons Charles E. (Mobile AL) Marano Gerald A. (Mobile AL) Kittrell James M. (Mobile AL) Whillock Allan A. (Mobile AL) Lanham Robert L. (Mobile AL) Evans Donald (South Mobile AL), Oxygen impermeable leak free container.
Gordon Lee Graff ; Mark Edward Gross ; Ming Kun Shi ; Michael Gene Hall ; Peter Maclyn Martin ; Eric Sidney Mast, Smoothing and barrier layers on high Tg substrates.
Misiano Carlo (Rome ITX) Simonetti Enrico (Rome ITX) Staffetti Francesco (Torninparte ITX), Thin film multilayer structure as permeation barrier on plastic film.
Walther Marten,DEX ; Heming Martin,DEX ; Spallek Michael,DEX ; Zschaschler Gudrun,DEX, Vessel of plastic having a barrier coating and a method of producing the vessel.
Edwards, Victoria Ann; Giroux, Cynthia Baker; Koval, Shari Elizabeth; Quesada, Mark Alejandro; Walczak, Wanda Janina, Multi-laminate hermetic barriers and related structures and methods of hermetic sealing.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.