Process for manufacturing a hydrophobic glazing containing a carbon rich silicon oxycarbide tie layer
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C03C-017/34
C03C-023/00
C03C-017/42
출원번호
US-0358496
(2012-11-14)
등록번호
US-9051213
(2015-06-09)
우선권정보
FR-11 604919 (2011-11-16)
국제출원번호
PCT/FR2012/052621
(2012-11-14)
국제공개번호
WO2013/072622
(2013-05-23)
발명자
/ 주소
Thoumazet, Claire
Melcher, Martin
Huignard, Arnaud
Lante, Raphael
출원인 / 주소
SAINT-GOBAIN GLASS FRANCE
대리인 / 주소
Oblon, McClelland, Maier & Neustadt, L.L.P.
인용정보
피인용 횟수 :
0인용 특허 :
1
초록▼
A process for manufacturing a hydrophobic glazing by: (i) forming a carbon-rich SiOxCy layer at a surface of a mineral glass substrate via CVD by contacting the surface with a stream containing C2H4, SiH4, and CO2 with an C2H4/SiH4 ratio of less than or equal to 3.3 by volume, at a temperature of be
A process for manufacturing a hydrophobic glazing by: (i) forming a carbon-rich SiOxCy layer at a surface of a mineral glass substrate via CVD by contacting the surface with a stream containing C2H4, SiH4, and CO2 with an C2H4/SiH4 ratio of less than or equal to 3.3 by volume, at a temperature of between 600° C. and 680° C.; (ii) forming a SiO2 layer or a carbon-poor silicon oxycarbide layer with a mean C/Si ratio of less than 0.2 on the carbon-rich SiOxCy layer, thereby obtaining a layered substrate; (iii) annealing and/or shaping the layered substrate at a temperature of between 580° C. and 700° C.; (iv) activating the SiO2 layer or the carbon-poor silicon oxycarbide layer by plasma treatment or acidic or basic chemical treatment; and (v) grafting, by covalent bonding, a fluorinated hydrophobic agent to the surface of the SiO2 layer or the carbon-poor silicon oxycarbide layer.
대표청구항▼
1. A process for manufacturing a hydrophobic glazing, the process comprising: forming a carbon-rich silicon oxycarbide (SiOxCy) layer at a surface of a mineral glass substrate by chemical vapor deposition (CVD) over at least a portion of the surface of the substrate by contacting the surface with a
1. A process for manufacturing a hydrophobic glazing, the process comprising: forming a carbon-rich silicon oxycarbide (SiOxCy) layer at a surface of a mineral glass substrate by chemical vapor deposition (CVD) over at least a portion of the surface of the substrate by contacting the surface with a stream of reactive gases comprising ethylene (C2H4), silane (SiH4), and carbon dioxide (CO2) with an ethylene/silane (C2H4/SiH4) ratio by volume of less than or equal to 3.3, at a temperature of between 600° C. and 680° C., wherein the carbon-rich SiOxCy layer has a mean C/Si ratio of greater than 0.4;forming an SiO2 layer or a carbon-poor SiOxCy layer with a mean C/Si ratio of less than 0.2 on the carbon-rich SiOxCy layer, to obtain a layered substrate;annealing and/or shaping the layered substrate at a temperature of between 580° C. and 700° C.;activating the SiO2 layer or the carbon-poor SiOxCy layer by plasma treatment or acidic or basic chemical treatment; andgrafting, by covalent bonding, a fluorinated hydrophobic agent to the surface of the SiO2 layer or the carbon-poor SiOxCy layer. 2. The process of claim 1, wherein the mineral glass substrate is float glass and the carbon-rich SiOxCy layer is formed on the float glass inside a furnace on a tin bath or immediately after exiting from a furnace. 3. The process of claim 1, comprising forming the SiO2 layer by CVD with, as precursor, tetraethoxysilane, plasma-enhanced chemical vapor deposition (PECVD), vacuum cathode sputtering supported by a magnetic field (magnetron sputtering), or a combination of the PECVD and the magnetron sputtering (magnetron-PECVD). 4. The process of claim 1, comprising forming the carbon-poor SiOxCy layer by CVD, which comprises contacting the carbon-rich SiOxCy layer with a stream of reactive gases comprising ethylene (C2H4), silane (SiH4), and carbon dioxide (CO2) with an ethylene/silane (C2H4/SiH4) ratio by volume of greater than 3.4 at a temperature of between 600° C. and 680° C. 5. The process of claim 4, wherein the carbon-rich SiOxCy layer and the carbon-poor SiOxCy layer are formed inside a float furnace, and wherein the streams of reactive gases comprising ethylene (C2H4), silane (SiH4), and carbon dioxide (CO2) are introduced into the furnace via two separate nozzles: a first nozzle introducing the stream of forming the carbon-rich SiOxCy upstream of a second nozzle introducing the stream of forming the carbon-poor SiOxCy. 6. The process of claim 1, wherein the carbon-rich SiOxCy layer has a thickness of between 10 and 200 nm. 7. The process of claim 1, wherein the SiO2 layer or the carbon-poor SiOxCy layer has a thickness of between 3 and 100 nm. 8. The process of claim 1, wherein the fluorinated hydrophobic agent is a fluoroalkylsilane of formula (I): F3C—(CF2)m—(CH2)n—Si(X)3-p(R)p (I)wherein: m=0 to 15;n=1 to 5;p=0, 1 or 2;R is a C1-8 alkyl group or a hydrogen atom; andX is a hydrolyzable group. 9. The process of claim 1, wherein the grafting comprises applying the hydrophobic agent as an acidic aqueous/alcoholic solution. 10. The process of claim 1, wherein the carbon-rich SiO xCy layer is formed at a temperature of between 610° C. and 660° C.; the process comprises forming the SiO2 layer or the carbon-poor SiOxCy layer, the carbon-poor SiOxCy layer having a mean C/Si ratio of less than 0.1; andwherein the annealing and/or shaping is at a temperature of between 600° C. and 680° C. 11. The process of claim 6, wherein the carbon-rich SiOxCy layer has a thickness between 20 and 100 nm. 12. The process of claim 7, wherein the SiO2 layer or the carbon-poor SiOxCy layer has a thickness of between 5 and 50 nm. 13. The process of claim 8, wherein, in formula (I): m is from 5 to 9;n is 2;p is 0 or 1; andX is a halogen atom or a C1-4 alkoxy group.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (1)
Oudard,Jean Francois, Silicon oxycarbide coatings having durable hydrophilic properties.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.