Ultra-fast nucleic acid sequencing device and a method for making and using the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-029/66
G01N-027/447
C12Q-001/68
G01N-033/487
B82Y-030/00
출원번호
US-0929794
(2007-10-30)
등록번호
US-9063081
(2015-06-23)
발명자
/ 주소
Sauer, Jon Robert
Van Zeghbroeck, Bart
출원인 / 주소
Life Technologies Corporation
인용정보
피인용 횟수 :
1인용 특허 :
71
초록▼
A system and method employing at least one semiconductor device, or an arrangement of insulating and metal layers, having at least one detecting region which can include, for example, a recess or opening therein, for detecting a charge representative of a component of a polymer, such as a nucleic ac
A system and method employing at least one semiconductor device, or an arrangement of insulating and metal layers, having at least one detecting region which can include, for example, a recess or opening therein, for detecting a charge representative of a component of a polymer, such as a nucleic acid strand proximate to the detecting region, and a method for manufacturing such a semiconductor device. The system and method can thus be used for sequencing individual nucleotides or bases of ribonucleic acid (RNA) or deoxyribonucleic acid (DNA). The semiconductor device includes at least two doped regions, such as two n-typed regions implanted in a p-typed semiconductor layer or two p-typed regions implanted in an n-typed semiconductor layer. The detecting region permits a current to pass between the two doped regions in response to the presence of the component of the polymer, such as a base of a DNA or RNA strand. The current has characteristics representative of the component of the polymer, such as characteristics representative of the detected base of the DNA or RNA strand.
대표청구항▼
1. A field effect transistor type detector, comprising: a silicon substrate including a device, the device comprising: a source region;a drain region; andat least one detecting region between the source and drain regions, the at least one detecting region having a recess or an opening; andan insulat
1. A field effect transistor type detector, comprising: a silicon substrate including a device, the device comprising: a source region;a drain region; andat least one detecting region between the source and drain regions, the at least one detecting region having a recess or an opening; andan insulator disposed about the recess or opening separating a polymer from the device when the polymer passes through the recess or opening;wherein a charge on a component of the polymer passing through the recess or opening induces an image charge sufficient to increase the conductivity of the detecting region by an amount related to the charge of the component of the polymer, the device to detect the component of the polymer based on the conductivity of the detecting region. 2. The detector of claim 1, wherein the source and drain regions are doped regions. 3. The detector of claim 2, wherein the doped regions comprise a p-type or an n-type doping. 4. The detector of claim 2, wherein the device comprises a plurality of doped regions and a detecting region associated with a pair of each doped regions. 5. The detector of claim 1, wherein the detecting region is adapted to generate a signal representative of a component of the polymer. 6. The detector of claim 1, wherein the device includes a plurality of detecting regions. 7. The detector of claim 1, wherein the detecting region passes a current between the source and drain regions in response to the presence of the component of the polymer proximate to the detecting region. 8. The detector of claim 1, wherein the polymer is DNA or RNA. 9. The detector of claim 1, wherein the source and drain regions are partially covered by the insulator at locations remote from the recess or opening. 10. The detector of claim 1, wherein the source and drain regions are coupled to contacts at locations remote from the recess or opening. 11. An array comprising: multiple detecting devices, each of the detecting devices comprising a:a source region;a drain region; andat least one detecting region between the source and drain regions, the at least one detecting region having a recess or opening;each of the detecting devices associated with an insulator disposed about the recess or opening and separating a polymer from each of the detecting devices when the polymer is in the recess or opening;wherein a charge on a component of the polymer passing through the recess or opening induces an image charge sufficient to increase the conductivity of the at least one detecting region by an amount related to the charge of the component of the polymer, each of the detecting devices to detect the component of the polymer based on the conductivity of the detecting region. 12. The array of claim 11, wherein the detecting devices comprise a plurality of detecting regions. 13. The array of claim 11, wherein the detecting regions comprise an opening or a recess. 14. The array of claim 11, wherein the polymer is DNA or RNA. 15. A method for detecting at least one polymer comprising: providing at least one detector comprising:a silicon substrate including a device, the device comprising: a source region;a drain region; andat least one detecting region between the source and drain regions, the at least one detecting region having a recess or an opening; andan insulator disposed about the recess or opening separating a polymer from the device when the polymer passes through the recess or opening;wherein a charge on a component of the polymer passing through the recess or opening induces an image charge sufficient to increase the conductivity of the detecting region by an amount related to the charge of the component of the polymer; anddetecting with the at least one detector the charge of the component of the polymer based on the conductivity of the at least one detecting region. 16. The method of claim 15, further comprising identifying the component based on the detected charge. 17. The method of claim 15, wherein the semiconductor substrate comprises a plurality of detecting regions. 18. The method of claim 15, wherein the detecting region is adapted to generate a signal representative of a component of the polymer. 19. The method of claim 15, wherein the silicon substrate further includes at least two doped regions such that the detecting region can pass a current between the doped regions in response to the presence of the component of the polymer. 20. The method of claim 15, further including the step of generating a signal at the detecting region representative of a charge of the component of the polymer. 21. The method of claim 15, wherein the polymer is DNA or RNA.
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