A semiconductor light emitting device includes a light emitting structure, a first electrode unit, and a second electrode unit. The light emitting structure includes a first and second conductivity-type semiconductor layer, an active layer. The first electrode unit includes a first electrode pad and
A semiconductor light emitting device includes a light emitting structure, a first electrode unit, and a second electrode unit. The light emitting structure includes a first and second conductivity-type semiconductor layer, an active layer. The first electrode unit includes a first electrode pad and a first electrode finger extending from the first electrode pad, and having an annular shape with an open portion. The second electrode unit includes a second electrode pad and a second electrode finger extending from the second electrode pad, and has an annular shape with an open portion. One of the first and second electrode units substantially surrounds the other, and the center of the annular shape of at least one of the first and second electrode units is spaced apart from the center of the upper surface of the light emitting structure.
대표청구항▼
1. A semiconductor light emitting device, comprising: a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;a first electrode unit disposed on an upper surface of the light emitting structure, connected
1. A semiconductor light emitting device, comprising: a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;a first electrode unit disposed on an upper surface of the light emitting structure, connected to the first conductivity-type semiconductor layer, including a first electrode pad and a first electrode finger extending from the first electrode pad, and having an annular shape with an open portion; anda second electrode unit disposed on the upper surface of the light emitting structure, connected to the second conductivity-type semiconductor layer, including a second electrode pad and a second electrode finger extending from the second electrode pad, and having an annular shape with an open portion,wherein one of the first and second electrode units substantially surrounds the other of the first and second electrode units, anda center of the annular shape of at least one of the first and second electrode units is spaced apart from the center of the upper surface of the light emitting structure. 2. The semiconductor light emitting device of claim 1, wherein at least one of the annular shapes of the first and second electrode units corresponds to the shape of the upper surface of light emitting structure. 3. The semiconductor light emitting device of claim 1, wherein the center of the annular shape of a particular one of the first and second electrode units is spaced apart from the center of the upper surface of the light emitting structure in a direction of the electrode pad provided in the particular electrode unit being spaced apart from a vertex of the upper surface of the light emitting structure adjacent thereto. 4. The semiconductor light emitting device of claim 1, wherein: the first electrode pad is disposed in one of first sections divided by different diagonal lines linking vertices facing one another on the basis of the shape of the upper surface of the light emitting structure, andthe second electrode pad is disposed in a section among second sections, which does not overlap with the one first section, the second sections being divided by a horizontal line and a vertical line traversing the center of the upper surface of the light emitting structure on the basis of the upper surface of the light emitting structure. 5. The semiconductor light emitting device of claim 1, wherein on the basis of the shape of the upper surface of the light emitting structure, a distance between one side of the upper surface and an annular shape adjacent thereto and a distance between a side opposing the one side and the annular shape adjacent thereto are different from each other. 6. The semiconductor light emitting device of claim 1, wherein the center of the annular shape of the first electrode unit is spaced apart from the center of the annular shape of the second electrode unit. 7. The semiconductor light emitting device of claim 1, wherein a distance between one side of the annular shape of the one electrode unit substantially surrounding the other electrode unit, among the first and second electrode units, and one side of the annular shape of the other electrode unit adjacent thereto, is different from a distance between another side opposing the one side of the annular shape of the one electrode unit and another side of the annular shape of the other electrode unit adjacent thereto. 8. The semiconductor light emitting device of claim 1, wherein at least one of the first and second electrode fingers extends to the opened region of the annular shape to make the annular shape a closed loop. 9. The semiconductor light emitting device of claim 1, wherein the one electrode unit substantially surrounding the other electrode unit, among the first and second electrode units, further comprises an auxiliary electrode finger extending through the opened region of the annular shape of the other electrode unit. 10. The semiconductor light emitting device of claim 9, wherein the auxiliary electrode finger comprises a first auxiliary electrode finger extending toward the electrode pad provided in the other electrode unit. 11. The semiconductor light emitting device of claim 10, wherein the auxiliary electrode finger further comprises a second auxiliary electrode finger extending in a direction different from the direction in which the first auxiliary electrode finger extends. 12. The semiconductor light emitting device of claim 11, wherein a distance between one side of the annular shape of the other electrode unit and the first auxiliary electrode finger and a distance between the other side opposing the one side of the annular shape of the other electrode unit and the second auxiliary electrode finger are different from each other. 13. The semiconductor light emitting device of claim 11, wherein the other electrode unit further comprises an intermediate electrode finger extending between the first and second auxiliary electrode fingers. 14. The semiconductor light emitting device of claim 13, wherein a distance between the first auxiliary electrode finger and the intermediate electrode finger and a distance between the second auxiliary electrode finger and the intermediate electrode finger are different from each other. 15. A semiconductor light emitting device, comprising: a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and having an upper surface with first to fourth sides;a first electrode unit disposed on an upper surface of the light emitting structure, connected to the first conductivity-type semiconductor layer, and including a first electrode pad and a first electrode finger extending from the first electrode pad; anda second electrode unit disposed on the upper surface of the light emitting structure, connected to the second conductivity-type semiconductor layer, and including a second electrode pad and a second electrode finger extending from the second electrode pad,wherein the first and second electrode units have an annular shape with an open portion, one of the first and second electrode units substantially surrounds the other of the first and second electrode units, anda distance between a first side of the upper surface of the light emitting structure and an annular shape adjacent thereto and a distance between a second side opposing the first side and an annular shape adjacent thereto are different. 16. A semiconductor light emitting device, comprising: a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;a first electrode unit disposed on an upper surface of the light emitting structure, connected to the first conductivity-type semiconductor layer, including a first electrode pad and a first electrode finger extending from the first electrode pad, and having an annular shape with an open portion; anda second electrode unit disposed on the upper surface of the light emitting structure, connected to the second conductivity-type semiconductor layer, including a second electrode pad and a second electrode finger extending from the second electrode pad, and having an annular shape that has a closed loop,wherein the second electrode units substantially surrounds the first electrode unit, anda center of the annular shape of at least one of the first and second electrode units is spaced apart from the center of the upper surface of the light emitting structure. 17. The semiconductor light emitting device of claim 16, wherein the second electrode unit further comprises an auxiliary electrode finger extending through the opened region of the annular shape of the first electrode unit. 18. The semiconductor light emitting device of claim 17, wherein the auxiliary electrode finger comprises a first auxiliary electrode finger extending toward the electrode pad provided in the first electrode unit. 19. The semiconductor light emitting device of claim 18, wherein the auxiliary electrode finger further comprises a second auxiliary electrode finger extending in a direction different from the direction in which the first auxiliary electrode finger extends. 20. The semiconductor light emitting device of claim 19, wherein the first electrode unit further comprises an intermediate electrode finger extending between the first and second auxiliary electrode fingers.
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