Method for depositing a thin layer and product thus obtained
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C03C-017/09
C03C-017/245
C03C-017/36
C03C-023/00
C23C-014/58
C30B-001/08
H01L-031/0224
H01L-031/18
출원번호
US-0521871
(2008-01-04)
등록번호
US-9073781
(2015-07-07)
우선권정보
FR-07 52550 (2007-01-05)
국제출원번호
PCT/FR2008/050009
(2008-01-04)
§371/§102 date
20090701
(20090701)
국제공개번호
WO2008/096089
(2008-08-14)
발명자
/ 주소
Nadaud, Nicolas
Kharchenko, Andriy
Billert, Ulrich
Gy, Rene
출원인 / 주소
SAINT-GOBAIN GLASS FRANCE
대리인 / 주소
Oblon, McClelland, Maier & Neustadt, L.L.P.
인용정보
피인용 횟수 :
6인용 특허 :
21
초록▼
One subject of the invention is a process for the treatment of at least one thin continuous film deposited on a first side of a substrate, characterized in that said at least one thin film is raised to a temperature of at least 300° C. while maintaining a temperature not exceeding 150° C. on the opp
One subject of the invention is a process for the treatment of at least one thin continuous film deposited on a first side of a substrate, characterized in that said at least one thin film is raised to a temperature of at least 300° C. while maintaining a temperature not exceeding 150° C. on the opposite side of said substrate to said first side, so as to increase the degree of crystallization of said thin film while keeping it continuous and without a step of melting said thin film. Another subject of the invention is the material that can be obtained by this process.
대표청구항▼
1. A process for increasing the degree of crystallization of at least one thin continuous film deposited on a first side of a substrate while keeping the film continuous and without melting the film, the process comprising: heating the film with a laser, wherein at every point on said at least one t
1. A process for increasing the degree of crystallization of at least one thin continuous film deposited on a first side of a substrate while keeping the film continuous and without melting the film, the process comprising: heating the film with a laser, wherein at every point on said at least one thin film that is heated to a temperature of at least 30020 C. using a laser, the temperature at no point on the opposite side of said substrate to said first side exceeds 15020 C., thereby increasing the degree of crystallization of said thin film while keeping it continuous and without melting said thin film,wherein the laser simultaneously irradiates the entire width of the substrate, andwherein the thin film is based on at least one oxide selected from the group consisting of indium zinc oxide, indium tin oxide, gallium-doped zinc oxide, niobium-doped titanium oxide, cadmium stannate, zinc stannate, fluorine-doped tin oxide, antimony-doped tin oxide, and fluorine- and antimony-doped tin oxide and wherein the thin film does not contain a metallic functional layer. 2. The process as claimed in claim 1, wherein the substrate is made of glass. 3. The process as claimed in claim 1, wherein a temperature not exceeding 10020 C. is maintained at any point on the opposite side of the substrate to the side on which the thin film is deposited. 4. The process as claimed in claim 1, wherein each point on the thin film is raised to a temperature of 30020 C. or higher for a time not exceeding 1 second. 5. The process as claimed in claim 1, wherein the degree of crystallization obtained is at least 20%. 6. The process as claimed in claim 1, wherein the substrate has at least one dimension of 1 m or higher. 7. The process as claimed in claim 1, wherein the thin film is based on at least one oxide selected from the group consisting of indium zinc oxide, indium tin oxide, fluorine doped tin oxide, antimony doped tin oxide, and fluorine- and antimony-doped tin oxide. 8. The process as claimed in claim 1, wherein the thin film before treatment does not contain any aqueous or organic solvent, and is obtained by sputtering. 9. A process for obtaining a material comprising a substrate and at least one thin film, wherein said at least one thin film is deposited on said substrate by magnetically enhanced (magnetron) sputtering and wherein said at least one thin film is subjected to the process as claimed in claim 1. 10. The process as claimed in claim 1, wherein the laser is an excimer laser. 11. The process as claimed in claim 1, wherein the laser is a fiber-guided laser. 12. The process as claimed in claim 1, wherein the laser is a fiber laser. 13. The process as claimed in claim 1, wherein the laser emits radiation with a wavelength from 0.5 to 5 microns. 14. The process as claimed in claim 1, wherein the laser emits infrared radiation. 15. The process as claimed in claim 1, wherein the degree of crystallization obtained is at least 50%. 16. The process as claimed in claim 1, wherein the degree of crystallization obtained is at least 70%. 17. The process as claimed in claim 1, wherein the degree of crystallization obtained is at least 90%.
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