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Method for manufacturing SOI substrate

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/66
  • H01L-021/00
  • H01L-021/46
  • H01L-021/30
  • H01L-021/36
  • H01L-021/762
  • H01L-021/02
  • H01L-021/20
출원번호 US-0106158 (2011-05-12)
등록번호 US-9076839 (2015-07-07)
우선권정보 JP-2008-200001 (2008-08-01); JP-2008-200016 (2008-08-01)
발명자 / 주소
  • Shimomura, Akihisa
  • Ohnuma, Hideto
  • Momo, Junpei
  • Yamazaki, Shunpei
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
    Robinson, Eric J.
인용정보 피인용 횟수 : 0  인용 특허 : 69

초록

An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substanti

대표청구항

1. A method for manufacturing an SOI substrate comprising the steps of: irradiating a single crystal semiconductor substrate with ions to form an embrittlement region in the single crystal semiconductor substrate;bonding the single crystal semiconductor substrate and a base substrate with an insulat

이 특허에 인용된 특허 (69)

  1. Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Fukunaga Takeshi,JPX ; Zhang Hongyong,JPX, Active Matry Display.
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  3. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  4. Koren, Zion; O'Carroll, Conor Patrick; Choy, Shuen Chun; Timans, Paul Janis; Cardema, Rudy Santo Tomas; Taoka, James Tsuneo; Strod, Arieh A., Heating configuration for use in thermal processing chambers.
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  6. Koren,Zion; O'Carroll,Conor Patrick; Choy,Shuen Chun; Timans,Paul Janis; Cardema,Rudy Santo Tomas; Taoka,James Tsuneo; Strod,Arieh A., Heating configuration for use in thermal processing chambers.
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  10. Yamazaki,Shunpei; Tanaka,Koichiro, Laser irradiating apparatus and method of manufacturing semiconductor apparatus.
  11. Miyairi, Hidekazu, Laser irradiation apparatus.
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  13. Yamazaki Shunpei,JPX ; Kusumoto Naoto,JPX, Laser irradiation method.
  14. Auvert Geoffroy (Grenoble FRX) Georgel Jean-Claude (Lambesc FRX) Guerin Yves (Pourrieres FRX), Laser microbeam machine for acting on thin film objects, in particular for chemically etching or depositing substance in.
  15. Tanaka, Koichiro; Yamamoto, Yoshiaki; Omata, Takatsugu, Laser treatment apparatus, laser treatment method, and manufacturing method of semiconductor device.
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  17. Shimomura, Akihisa; Miyairi, Hidekazu; Sato, Yurika, Manufacturing method of SOI substrate and manufacturing method of semiconductor device.
  18. Yamazaki,Shunpei; Zhang,Hongyong; Kusumoto,Naoto; Takemura,Yasuhiko, Method for crystallizing semiconductor material.
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  23. Ohnuma, Hideto, Method for manufacturing SOI substrate.
  24. Ohtani Hisashi (Kanagawa JPX) Miyanaga Akiharu (Kanagawa JPX) Fukunaga Takeshi (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX), Method for manufacturing a semiconductor device.
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  26. Ohtani,Hisashi; Miyanaga,Akiharu; Fukunaga,Takeshi; Zhang,Hongyong, Method for manufacturing a semiconductor device.
  27. Miyairi, Hidekazu, Method for manufacturing a semiconductor device with irradiation of single crystal semiconductor layer in an inert atmosphere.
  28. Arai, Yasuyuki, Method for manufacturing photoelectric conversion device.
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  30. Moriwaka, Tomoaki, Method for manufacturing semiconductor substrate.
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  33. Yamazaki Shunpei (Tokyo JPX) Suzuki Kunio (Tokyo JPX) Nagayama Susumu (Yokohama JPX) Inujima Takashi (Atsugi JPX) Abe Masayoshi (Tama JPX) Fukada Takeshi (Ebina JPX) Kinka Mikio (Nonoichimachi JPX) K, Method for photo annealing non-single crystalline semiconductor films.
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  35. Mantl,Siegfried; Holl��nder,Bernhard, Method for producing a strained layer on a substrate and corresponding layer structure.
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