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Systems and methods for performing X-ray Photoelectron Spectroscopy (XPS) measurements in a semiconductor environment are disclosed. A reference element peak is selected and tracked as part of the measurement process. Peak shift of the reference element peak, in electron volts (eV) is tracked and ap

Systems and methods for performing X-ray Photoelectron Spectroscopy (XPS) measurements in a semiconductor environment are disclosed. A reference element peak is selected and tracked as part of the measurement process. Peak shift of the reference element peak, in electron volts (eV) is tracked and applied to other portions of acquired spectrum to compensate for the shift, which results from surface charge fluctuation.

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1. A method for performing measurements with an X-ray photoelectron spectroscopy measurement tool, comprising: irradiating a semiconductor substrate with X-ray energy;detecting emitted electrons from the semiconductor substrate;selecting a reference element peak based on the detected emitted electro

1. A method for performing measurements with an X-ray photoelectron spectroscopy measurement tool, comprising: irradiating a semiconductor substrate with X-ray energy;detecting emitted electrons from the semiconductor substrate;selecting a reference element peak based on the detected emitted electrons;recording an initial location for the reference element peak;computing a shift in location for the reference element peak; and applying a correction to a plurality of element windows, based on the computed shift; andfurther comprising performing a measurement at multiple locations on the semiconductor substrate, and further comprising computing a standard deviation of shift for the multiple reference element peak locations. 2. The method of claim 1, wherein selecting a reference element peak based on the detected emitted electrons comprises identifying a peak of maximum amplitude within a spectrum. 3. The method of claim 2, wherein selecting a reference element peak further comprises performing a pre-scan measurement at a first energy range, and performing an analytical measurement at a second energy range. 4. The method of claim 1, wherein irradiating a semiconductor substrate with X-ray energy comprises irradiating a semiconductor substrate with X-ray energy for a duration ranging from 1 second to 120 seconds. 5. The method of claim 1, further comprising computing a maximum shift value and corresponding location. 6. The method of claim 5, further comprising: recording a predetermined limit for the standard deviation of shift for a plurality of locations; andpresenting a warning if the standard deviation of shift exceeds the predetermined limit. 7. The method of claim 6, further comprising: recording a predetermined limit for the maximum shift value for the semiconductor substrate; andpresenting a warning if the maximum shift value exceeds the predetermined limit. 8. The method of claim 1, further comprising: receiving predetermined limits for one or more constituents of the semiconductor substrate; andpresenting a warning if a concentration of one or more constituents of the semiconductor substrate are outside of the predetermined limits. 9. A system for performing measurements with an X-ray photoelectron spectroscopy measurement tool, comprising: an X-ray source configured and disposed to irradiate a semiconductor substrate;a detector configured to detect emitted electrons from the semiconductor substrate;a processor, configured and disposed to access a non-transitory memory, wherein the non-transitory memory contains instructions, that when executed by the processor, perform the steps of:selecting a reference element peak based on the emitted electrons;recording an initial location for the reference element peak; computing a shift in location for the reference element peak; andapplying a correction to a plurality of element windows, based on the computed shift; andperforming a measurement at multiple locations on the semiconductor substrate;computing a standard deviation of shift for the multiple reference element peak locations;recording a predetermined limit for the standard deviation of shift; andpresenting a warning if the standard deviation of shift exceeds the predetermined limit. 10. The system of claim 9, wherein the non-transitory memory contains instructions, that when executed by the processor, perform the steps of: recording a predetermined limit for a maximum shift value for the semiconductor substrate; andpresenting a warning if the maximum shift value exceeds the predetermined limit. 11. The system of claim 9, wherein the non-transitory memory contains instructions, that when executed by the processor, perform the steps of: receiving predetermined limits for one or more constituents of the semiconductor substrate; andpresenting a warning if a concentration of one or more constituents of the semiconductor substrate are outside of the predetermined limits. 12. A non-transitory computer-readable medium comprising: instructions, which when executed by a processor, perform the steps of:irradiating a semiconductor substrate with X-ray energy;detecting emitted electrons from the semiconductor substrate;selecting a reference element peak based on the detected emitted electrons;recording an initial location for the reference element peak;computing a shift in location for the reference element peak; andapplying a correction to a plurality of element windows, based on the computed shift; andinstructions, which when executed by a processor, perform the steps of:performing a measurement at multiple locations on the semiconductor substrate;recording a predetermined limit for a standard deviation of shift for a plurality of reference element peak locations; andpresenting a warning if the standard deviation of shift exceeds the predetermined limit. 13. The non-transitory computer-readable medium of claim 12, further comprising: instructions, which when executed by a processor, perform the step of identifying a peak of maximum amplitude within a spectrum. 14. The non-transitory computer-readable medium of claim 13, further comprising: instructions, which when executed by a processor, perform a pre-scan measurement at a first energy range and an analytical measurement at a second energy range. 15. The non-transitory computer-readable medium of claim 12, further comprising: instructions, which when executed by a processor, perform the step of irradiating a semiconductor substrate with X-ray energy for a duration ranging from 120 seconds to 600 seconds. 16. The non-transitory computer-readable medium of claim 12, further comprising: instructions, which when executed by a processor, perform the steps of: recording predetermined limits for one or more constituents of the semiconductor substrate; andpresenting a warning if a concentration of one or more constituents of the semiconductor substrate are outside of the predetermined limits.