Peeling apparatus and manufacturing apparatus of semiconductor device
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-031/18
H01L-033/00
H01L-027/15
출원번호
US-0540348
(2014-11-13)
등록번호
US-9087931
(2015-07-21)
우선권정보
JP-2006-266531 (2006-09-29)
발명자
/ 주소
Eguchi, Shingo
Monma, Yohei
Tani, Atsuhiro
Hirosue, Misako
Hashimoto, Kenichi
Hosaka, Yasuharu
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson, Eric J.
인용정보
피인용 횟수 :
1인용 특허 :
43
초록▼
To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap betw
To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.
대표청구항▼
1. A method for manufacturing a display module, comprising: forming a release layer over a substrate;forming an element layer over the release layer;removing part of the element layer by irradiating the part with laser, whereby peeling is caused at an interface between the release layer and the elem
1. A method for manufacturing a display module, comprising: forming a release layer over a substrate;forming an element layer over the release layer;removing part of the element layer by irradiating the part with laser, whereby peeling is caused at an interface between the release layer and the element layer;attaching a film over the element layer by a roller;supplying liquid to a portion where the peeling is caused; andseparating the element layer from the substrate, wherein the separated interface is supplied with the liquid as the separation proceeds. 2. The method according to claim 1, wherein the liquid is water. 3. The method according to claim 1, wherein the film is attached over the element layer after the peeling is caused. 4. The method according to claim 1, further comprising: oxidizing a surface of the release layer. 5. The method according to claim 1, wherein the release layer includes a metal film comprising a metal selected from tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, and iridium, or an alloy thereof. 6. The method according to claim 1, wherein the display module is an EL module. 7. A method for manufacturing a display module, comprising: forming a release layer over a substrate;forming an element layer over the release layer;removing part of the element layer, whereby peeling is caused at an interface between the release layer and the element layer;attaching a film over the element layer by a roller;supplying liquid to a portion where the peeling is caused;separating the element layer from the substrate, wherein the separated interface is supplied with the liquid as the separation proceeds; andblowing dry air at the separated element layer. 8. The method according to claim 7, wherein the part of the element layer is removed by laser irradiation. 9. The method according to claim 7, wherein the liquid is water. 10. The method according to claim 7, wherein the film is attached over the element layer after the peeling is caused. 11. The method according to claim 7, further comprising: oxidizing a surface of the release layer. 12. The method according to claim 7, wherein the release layer includes a metal film comprising a metal selected from tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, and iridium, or an alloy thereof. 13. The method according to claim 7, wherein the display module is an EL module. 14. A method for manufacturing a display module, comprising: forming a release layer over a substrate;forming an element layer over the release layer;removing part of the element layer, whereby peeling is caused at an interface between the release layer and the element layer;attaching a film over the element layer;supplying liquid to a portion where the peeling is caused;separating the element layer from the substrate by a roller, wherein the separation proceeds as the roller rolls, and the separated interface is supplied with the liquid as the separation proceeds. 15. The method according to claim 14, wherein the part of the element layer is removed by laser irradiation. 16. The method according to claim 14, wherein the liquid is water. 17. The method according to claim 14, wherein the film is attached over the element layer after the peeling is caused. 18. The method according to claim 14, further comprising: oxidizing a surface of the release layer. 19. The method according to claim 14, further comprising: blowing dry air at the separated element layer. 20. The method according to claim 14, wherein the display module is an EL module.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same.
Shimoda,Tatsuya; Inoue,Satoshi; Miyazawa,Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same.
Shimoda,Tatsuya; Inoue,Satoshi; Miyazawa,Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same.
Okuyama, Futoshi; Shinba, Yoichi; Hayashi, Tetsuya; Akamatsu, Takayoshi, Laminated member for circuit board, method and apparatus for manufacturing of circuit board.
Watanabe, Ryosuke; Takahashi, Hidekazu; Tsurume, Takuya; Arai, Yasuyuki; Watanabe, Yasuko; Higuchi, Miyuki, Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip.
Yamazaki,Shunpei; Takayama,Toru; Kanno,Yohei, Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device.
Yamazaki, Shunpei; Murakami, Masakazu; Takayama, Toru; Maruyama, Junya, Method for fabricating a semiconductor device by transferring a layer to a support with curvature.
Yamazaki,Shunpei; Murakami,Masakazu; Takayama,Toru; Maruyama,Junya, Method for fabricating a semiconductor device by transferring a layer to a support with curvature.
Yamazaki Shunpei,JPX ; Arai Yasuyuki,JPX ; Teramoto Satoshi,JPX, Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bo.
Sonoda, Yuichi; Arao, Kozo; Toyama, Noboru; Miyamoto, Yusuke, Process and apparatus for forming zinc oxide film, and process and apparatus for producing photovoltaic device.
Tatsuya Shimoda JP; Satoshi Inoue JP; Wakao Miyazawa JP, Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.