Process for purifying chlorosilanes by distillation
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IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B01D-003/14
C01B-033/107
C01B-033/037
C01B-033/04
출원번호
US-0358919
(2012-01-26)
등록번호
US-9089788
(2015-07-28)
우선권정보
DE-10 2011 003 453 (2011-02-01)
발명자
/ 주소
Paetzold, Uwe
Haeckl, Walter
Prochaska, Jan
출원인 / 주소
Wacker Chemie AG
대리인 / 주소
Caesar Rivise, PC
인용정보
피인용 횟수 :
2인용 특허 :
8
초록▼
The invention relates to a process for purifying chlorosilanes by distillation, which includes providing a boron-containing mixture of chlorosilanes containing TCS, DCS and STC and purifying the mixture of chlorosilanes by distillation in a plurality of distillation columns, wherein low-boiling boro
The invention relates to a process for purifying chlorosilanes by distillation, which includes providing a boron-containing mixture of chlorosilanes containing TCS, DCS and STC and purifying the mixture of chlorosilanes by distillation in a plurality of distillation columns, wherein low-boiling boron compounds are branched off from the distillation columns by overhead streams containing boron-enriched DCS and high-boiling boron compounds are branched off by a boron-enriched bottom stream containing high boilers.
대표청구항▼
1. A process for purifying chlorosilanes by distillation, which comprises providing a boron-containing mixture of chlorosilanes containing trichlorosilane (TCS), dichlorosilane (DCS) and silicon tetrachloride (STC) and purifying the mixture of chlorosilanes by distillation in a plurality of distilla
1. A process for purifying chlorosilanes by distillation, which comprises providing a boron-containing mixture of chlorosilanes containing trichlorosilane (TCS), dichlorosilane (DCS) and silicon tetrachloride (STC) and purifying the mixture of chlorosilanes by distillation in a plurality of distillation columns, wherein the mixture of chlorosilanes is fed to a separation column in which column parameters are selected so that less than 10 ppm of STC are present in a first fraction from the separation column and less than 10 ppm of TCS are present in a second fraction from the separation column, wherein the first fraction from the separation column is fed to a third column and separated by distillation into a bottom stream containing TCS and a boron-enriched overhead stream containing TCS together with low boilers such as DCS, wherein the second fraction from the separation column is fed to a second column and separated by distillation into an overhead stream containing STC and a boron-enriched bottom stream containing high boilers, in order to branch off low-boiling boron compounds from the distillation columns via overhead streams containing boron-enriched DCS and high-boiling boron compounds via a boron-enriched bottom stream containing high boilers. 2. The process as claimed in claim 1, wherein the mixture of chlorosilanes which is provided is produced by reaction of metallurgical silicon with HCl in a fluidized-bed reactor at 350-400° C. 3. The process as claimed in claim 1, wherein the overhead stream from the third column is fed into a fourth column into which inert gas is fed, with an overhead stream containing boron-enriched DCS from the fourth column being discharged, a bottom stream from the fourth column being recirculated to the separation column and a secondary stream containing offgas from the fourth column being disposed of. 4. The process as claimed in claim 2, wherein the overhead stream from the third column is fed into a fourth column into which inert gas is fed, with an overhead stream containing boron-enriched DCS from the fourth column being discharged, a bottom stream from the fourth column being recirculated to the separation column and a secondary stream containing offgas from the fourth column being disposed of. 5. The process as claimed in claim 3, wherein the fourth column is operated under superatmospheric pressure. 6. The process as claimed in claim 4, wherein the fourth column is operated under superatmospheric pressure. 7. The process as claimed in claim 3, wherein the overhead stream from the third column is liquefied before being fed into the fourth column. 8. The process as claimed in claim 4, wherein the overhead stream from the third column is liquefied before being fed into the fourth column. 9. The process as claimed in claim 5, wherein the overhead stream from the third column is liquefied before being fed into the fourth column. 10. The process as claimed in claim 6, wherein the overhead stream from the third column is liquefied before being fed into the fourth column. 11. The process as claimed in claim 7, wherein the overhead stream is cooled via a water cooler to a temperature of 10-30° C., a condensate formed is recirculated to the third column, uncondensed material is fed to a brine cooler which cools a product stream to −7° C., where a material which is not condensed in the brine cooler is fed to a low-temperature cooling stage and condensed there to form a condensate and the condensate and a condensate from the brine cooler are fed to the fourth column. 12. The process as claimed in claim 8, wherein the overhead stream is cooled via a water cooler to a temperature of 10-30° C., a condensate formed is recirculated to the third column, uncondensed material is fed to a brine cooler which cools a product stream to −7° C., where a material which is not condensed in the brine cooler is fed to a low-temperature cooling stage and condensed there to form a condensate and the condensate and a condensate from the brine cooler are fed to the fourth column. 13. The process as claimed in claim 9, wherein the overhead stream is cooled via a water cooler to a temperature of 10-30° C., a condensate formed is recirculated to the third column, uncondensed material is fed to a brine cooler which cools a product stream to −7° C., where a material which is not condensed in the brine cooler is fed to a low-temperature cooling stage and condensed there to form a condensate and the condensate and a condensate from the brine cooler are fed to the fourth column. 14. The process as claimed in claim 10, wherein the overhead stream is cooled via a water cooler to a temperature of 10-30° C., a condensate formed is recirculated to the third column, uncondensed material is fed to a brine cooler which cools a product stream to −7° C., where a material which is not condensed in the brine cooler is fed to a low-temperature cooling stage and condensed there to form a condensate and the condensate and a condensate from the brine cooler are fed to the fourth column.
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이 특허에 인용된 특허 (8)
Choi, Chul-Hwan; Lee, Jeong-Seok; Choi, Kwang-Wook; Shin, Joon-Ho; Kim, Dong-Kyu, Method and apparatus for purification of trichlorosilane.
Griesshammer Rudolf (Alttting DEX) Kppl Franz (Alttting DEX) Lorenz Helmut (Burghausen DEX) Steudten Friedrich (Burghausen DEX), Process for working up the residual gases obtained in the deposition of silicon and in the conversion of silicon tetrach.
Padovani ; Francois A. ; Miller ; Michael Brant ; Moore ; James A. ; Fo wler ; James H. ; June ; Malcolm Neville ; Matthews ; James D. ; Morton ; T. R. ; Stotko ; Norbert A. ; Palmer ; Lewis B., Process of refining impure silicon to produce purified electronic grade silicon.
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