초록 ▼

This document refers to multi-die micromechanical system (MEMS) packages. In an example, a multi-die MEMS package can include a controller integrated circuit (IC) configured to couple to a circuit board, a MEMS IC mounted to a first side of the controller IC, a through silicon via extending through

This document refers to multi-die micromechanical system (MEMS) packages. In an example, a multi-die MEMS package can include a controller integrated circuit (IC) configured to couple to a circuit board, a MEMS IC mounted to a first side of the controller IC, a through silicon via extending through the controller IC between the first side and a second side of the controller IC, the second side opposite the first side, and wherein the MEMS IC is coupled to the through silicon via.

대표청구항 ▼

1. An apparatus comprising: a microelectromechanical system (MEMS) integrated circuit (IC), the MEMS IC including: a device layer having a plurality of gaps, the plurality of gaps forming multiple moveable portions and a single anchor, the single anchor configured to support the multiple moveable po

1. An apparatus comprising: a microelectromechanical system (MEMS) integrated circuit (IC), the MEMS IC including: a device layer having a plurality of gaps, the plurality of gaps forming multiple moveable portions and a single anchor, the single anchor configured to support the multiple moveable portions; anda cap layer coupled to the device layer and configured to maintain a vacuum about the multiple moveable portions and to limit out-of-plane movement of the multiple moveable portions; anda controller IC having a first side coupled to the MEMS IC, the controller IC including a through silicon via extending through the controller IC from the first side to a second side of the controller IC, the through silicon via configured to electrically couple contacts located the first side of the controller IC with contacts located on the second side of the controller IC. 2. The apparatus of claim 1, wherein the MEMS IC includes a via wafer coupled to the device layer opposite the cap layer, the via layer configured to electrically couple the device layer and the controller IC. 3. The apparatus of claim 1, wherein the controller IC is directly coupled to the device layer at a perimeter of the device layer and at the single anchor. 4. The apparatus of claim 1, wherein the MEMS IC includes an inertial sensor. 5. The apparatus of claim 1, wherein the MEMS IC includes a three-axis gyroscope sensor and a three-axis accelerometer. 6. The apparatus of claim 5, wherein the three-axis gyroscope sensor and the three-axis accelerometer are mechanically integrated within the device layer. 7. The apparatus of claim 1, including a MEMS pressure sensor IC coupled to the first side of the controller IC. 8. The apparatus of claim 1, including a high voltage controller IC coupled to the first side of the controller IC proximate the MEMS IC, the high voltage controller IC configured to operate with higher voltages than the controller IC. 9. The apparatus of claim 1, wherein the controller IC includes an application-specific IC (ASIC).