Photoelectric conversion device and manufacturing method thereof
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-031/0224
H01L-031/0216
H01L-031/0236
H01L-031/068
출원번호
US-0331664
(2014-07-15)
등록번호
US-9099579
(2015-08-04)
우선권정보
JP-2010-139799 (2010-06-18)
발명자
/ 주소
Yamazaki, Shunpei
Arai, Yasuyuki
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Husch Blackwell LLP
인용정보
피인용 횟수 :
0인용 특허 :
27
초록▼
A photoelectric conversion device with a novel anti-reflection structure. In the photoelectric conversion device, a front surface of a semiconductor substrate which serves as a light-receiving surface is covered with a group of whiskers (a group of nanowires) so that surface reflection is reduced. I
A photoelectric conversion device with a novel anti-reflection structure. In the photoelectric conversion device, a front surface of a semiconductor substrate which serves as a light-receiving surface is covered with a group of whiskers (a group of nanowires) so that surface reflection is reduced. In other words, a semiconductor layer which has a front surface where crystals grow so that whiskers are formed is provided on the light-receiving surface side of the semiconductor substrate. The semiconductor layer has a given uneven structure, and thus has effects of reducing reflection on the front surface of the semiconductor substrate and increasing conversion efficiency.
대표청구항▼
1. A method for manufacturing a photoelectric conversion device, comprising the steps of: forming a metal layer over a front surface of a semiconductor substrate;supplying a semiconductor gas to the metal layer at a temperature of higher than 550° C. to form a plurality of whiskers over the front su
1. A method for manufacturing a photoelectric conversion device, comprising the steps of: forming a metal layer over a front surface of a semiconductor substrate;supplying a semiconductor gas to the metal layer at a temperature of higher than 550° C. to form a plurality of whiskers over the front surface of the semiconductor substrate;irradiating a back surface of the semiconductor substrate with an n-type impurity gas to form an n-type impurity region on the back surface of the semiconductor substrate;irradiating the back surface of the semiconductor substrate with a p-type impurity gas to form a p-type impurity region on the back surface of the semiconductor substrate;forming a first electrode on the n-type impurity region; andforming a second electrode on the p-type impurity region. 2. The method for manufacturing the photoelectric conversion device according to claim 1, further comprising the steps of: forming an insulating film over the plurality of whiskers. 3. The method for manufacturing the photoelectric conversion device according to claim 1, wherein the n-type impurity region contains an n-type impurity element added by a doping method, andwherein the p-type impurity region contains a p-type impurity element added by a doping method. 4. The method for manufacturing the photoelectric conversion device according to claim 1, wherein the metal layer comprises an island structure. 5. The method for manufacturing the photoelectric conversion device according to claim 1, wherein the p-type impurity region comprises a first p-type impurity region and a second p-type impurity region, andwherein a first impurity concentration of the first p-type impurity region is different from a second impurity concentration of the second p-type impurity region. 6. The method for manufacturing the photoelectric conversion device according to claim 1, wherein each of the plurality of the whiskers comprises a protrusion with a diameter of greater than or equal to 500 nm and less than or equal to 3 μm, and a length of greater than or equal to 1 μm and less than or equal to 100 μm. 7. The method for manufacturing the photoelectric conversion device according to claim 1, wherein a reflectance of the plurality of the whiskers is less than or equal to 0.2%. 8. The method for manufacturing the photoelectric conversion device according to claim 1, wherein the metal layer is made of platinum, aluminum, copper, titanium, or an aluminum alloy including silicon, titanium, neodymium, scandium, or molybdenum. 9. A method for manufacturing a photoelectric conversion device, comprising the steps of: forming a metal layer over a front surface of a semiconductor substrate;supplying a semiconductor gas to the metal layer at a temperature of higher than 550° C. after forming the metal layer to form a plurality of whiskers over the front surface of the semiconductor substrate;irradiating a back surface of the semiconductor substrate with an n-type impurity gas to form an n-type impurity region on the back surface of the semiconductor substrate;irradiating the back surface of the semiconductor substrate with a p-type impurity gas to form a p-type impurity region on the back surface of the semiconductor substrate;forming an insulating layer on the n-type impurity region and the p-type impurity region;forming a first electrode on the n-type impurity region electrically connected to the n-type impurity region through a contact hole in the insulating layer; andforming a second electrode on the p-type impurity region electrically connected to the p-type impurity region through a contact hole in the insulating layer. 10. The method for manufacturing the photoelectric conversion device according to claim 9, further comprising: forming an insulating film over the plurality of whiskers. 11. The method for manufacturing the photoelectric conversion device according to claim 9, wherein the n-type impurity region contains an n-type impurity element added by a doping method, andwherein the p-type impurity region contains a p-type impurity element added by a doping method. 12. The method for manufacturing the photoelectric conversion device according to claim 9, wherein the metal layer comprises an island structure. 13. The method for manufacturing the photoelectric conversion device according to claim 9, wherein the p-type impurity region comprises a first p-type impurity region and a second p-type impurity region, andwherein a first impurity concentration of the first p-type impurity region is different from a second impurity concentration of the second p-type impurity region. 14. The method for manufacturing the photoelectric conversion device according to claim 9, wherein each of the plurality of the whiskers comprises a protrusion with a diameter of greater than or equal to 500 nm and less than or equal to 3 μm, and a length of greater than or equal to 1 μm and less than or equal to 100 μm. 15. The method for manufacturing the photoelectric conversion device according to claim 9, wherein a reflectance of the plurality of the whiskers is less than or equal to 0.2%. 16. The method for manufacturing the photoelectric conversion device according to claim 9, wherein the metal layer is made of platinum, aluminum, copper, titanium, or an aluminum alloy including silicon, titanium, neodymium, scandium, or molybdenum.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (27)
Hatta,Akitmitsu; Yoshimura,Hiroaki; Ishimoto,Keiichi; Kanakusa,Hiroaki; Kawagoe,Shinichi, Acicular silicon crystal and process for producing the same.
Ribeyron, Pierre Jean; Jaussaud, Claude; Roca I. Cabarrocas, Pere; Damon-Lacoste, Jerome, Semiconductor device with heterojunctions and an inter-finger structure.
Shibuya, Munehiro; Kitagawa, Masatoshi; Mukai, Yuuji; Yoshida, Akihisa, Silicon structure, method for producing the same, and solar battery using the silicon structure.
Mulligan,William P.; Cudzinovic,Michael J.; Pass,Thomas; Smith,David; Kaminar,Neil; McIntosh,Keith; Swanson,Richard M., Solar cell and method of manufacture.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.