초록

A copper interconnect includes a copper layer formed in a dielectric layer. A glue layer is formed between the copper layer and the dielectric layer. A barrier layer is formed at the boundary between the glue layer and the dielectric layer. The barrier layer is a metal oxide.

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1. A method comprising: etching a dielectric layer to form an opening;depositing a glue layer to a bottom and sidewalls of the opening, wherein the glue layer comprises a metal alloy;depositing a seed layer over the glue layer;after the depositing the seed layer, filling the opening with a metallic

1. A method comprising: etching a dielectric layer to form an opening;depositing a glue layer to a bottom and sidewalls of the opening, wherein the glue layer comprises a metal alloy;depositing a seed layer over the glue layer;after the depositing the seed layer, filling the opening with a metallic material; andperforming a thermal treatment to cause a metal in the seed layer to diffuse through the glue layer, wherein the metal reacts with the dielectric layer to form a barrier layer. 2. The method of claim 1, wherein the dielectric layer comprises an oxygen-containing dielectric, and wherein the barrier layer comprises an oxide of the metal. 3. The method of claim 1, wherein after the thermal treatment, the metal in the glue layer completely diffuses to the dielectric layer. 4. The method of claim 1, wherein the thermal treatment is performed at a temperature in a range between about 137° C. and about 600° C. 5. The method of claim 1 further comprising, before the thermal treatment, performing a chemical mechanical polish. 6. The method of claim 1 further comprising, after the thermal treatment, forming an etch stop layer over the dielectric layer. 7. The method of claim 1, wherein the metal in the seed layer comprises manganese (Mn). 8. The method of claim 1, wherein the metal in the seed layer comprises aluminum (Al). 9. The method of claim 1, wherein the metal alloy comprises a metal selected from the group consisting essentially of cobalt (Co), silver (Ag), aluminum (Al), zinc (Zn), calcium (Ca), gold (Au), magnesium (Mg), tungsten (W), molybdenum (Mo), nickel (Ni), chromium (Cr), and combinations thereof. 10. A method comprising: etching an oxygen-containing dielectric layer to form an opening;depositing a glue layer to a bottom and sidewalls of the opening, wherein the glue layer comprises a metal alloy;depositing a seed layer over the glue layer, wherein the seed layer comprises a main element and an additive metal element;filling the opening with a metallic material;performing a chemical mechanical polish (CMP) to remove portions of the glue layer, the seed layer, and the metallic material over the oxygen-containing dielectric layer;after the CMP, performing an annealing, wherein the annealing causes the additive metal element in the seed layer to diffuse through the glue layer, and the additive metal element reacts with the oxygen-containing dielectric layer to form a metal oxide, with the metal oxide comprising the additive metal element; andafter the annealing, forming an etch stop layer over the oxygen-containing dielectric layer, the glue layer, the seed layer, and the metallic material. 11. The method of claim 10, wherein the additive metal element comprises manganese (Mn), and wherein the metal oxide comprises a manganese oxide. 12. The method of claim 10, wherein the additive metal element comprises aluminum (Al), and wherein the metal oxide comprises an aluminum oxide. 13. The method of claim 10, wherein the forming the opening comprises forming a via-hole and an upper trench over the via-hole. 14. The method of claim 10, wherein the forming the glue layer comprises physical vapor deposition. 15. The method of claim 10, wherein the annealing is performed at a temperature in a range between about 137° C. and about 600° C. 16. A method comprising: etching an oxygen-containing dielectric layer to form an opening;depositing a glue layer into the opening, wherein the glue layer comprises a metal alloy, and wherein the glue layer is in physical contact with the oxygen-containing dielectric layer;depositing a seed layer over and contacting the glue layer, wherein the seed layer comprises copper and an additive metal element selected from the group consisting essentially of manganese (Mn) and aluminum (Al);filling the opening with copper;performing a chemical mechanical polish (CMP) to expose the oxygen-containing dielectric layer; andafter the CMP, performing an annealing, wherein the annealing results in the additive metal element to diffuse through the glue layer to reach the oxygen-containing dielectric layer to form a metal oxide. 17. The method of claim 16 further comprising, after the annealing, forming an etch stop layer over the oxygen-containing dielectric layer, the glue layer, and the seed layer. 18. The method of claim 16, wherein after the CMP, the additive metal element is completely diffused into the oxygen-containing dielectric layer. 19. The method of claim 16, wherein the annealing is performed at a temperature in a range between about 137° C. and about 600° C. 20. The method of claim 16, wherein the annealing is performed for a period of time in a range between about 10 minutes and about 600 minutes.