초록 ▼

A III-Nitride device has a back-gate disposed in a trench and under and in close proximity to the 2 DEG layer and in lateral alignment with the main gate of the device. A laterally disposed trench is also disposed in a trench and under and in close proximity to the drift region between the gate and

A III-Nitride device has a back-gate disposed in a trench and under and in close proximity to the 2 DEG layer and in lateral alignment with the main gate of the device. A laterally disposed trench is also disposed in a trench and under and in close proximity to the drift region between the gate and drain electrodes of the device. The back-gate is connected to the main gate and the field plate is connected to the source electrode. The back-gate can consist of a highly conductive silicon substrate.

대표청구항 ▼

1. A III-Nitride device having improved transconductance, said device comprising: a substrate;a first III-nitride layer supported by said substrate;a second III-Nitride layer atop said first III-Nitride layer and creating a 2 DEG conducting layer at the interface of said first and second III-Nitride

1. A III-Nitride device having improved transconductance, said device comprising: a substrate;a first III-nitride layer supported by said substrate;a second III-Nitride layer atop said first III-Nitride layer and creating a 2 DEG conducting layer at the interface of said first and second III-Nitride layers;first and second spaced main electrodes connected to said second III-Nitride layer;a main gate structure connected to said second III-Nitride layer and disposed laterally between said first and second main electrodes and adapted to adjustably change the conductivity of said 2 DEG layer beneath said main gate structure in response to a predetermined signal on said main gate structure; anda back-gate structure having a lateral position in alignment with a lateral position of said main gate structure and beneath said 2 DEG layer;said lateral position of said back-gate structure not overlapping with a lateral position of said first main electrode and a lateral position of said second main electrode; andsaid back-gate structure electrically connected to a potential of said main gate structure; andsaid back-gate structure disposed within a trench without exposing said first III-Nitride layer, wherein a web portion of said substrate is disposed between a bottom surface of said trench and said first III-Nitride layer. 2. The device of claim 1, which further includes a transition layer disposed between said substrate and said first III-Nitride layer. 3. The device of claim 1, wherein said first and second III-Nitride layers comprise a GaN layer and an AlGaN layer respectively. 4. The device of claim 2, wherein said first and second III-Nitride layers comprise a GaN layer and an AlGaN layer respectively. 5. The device of claim 1, wherein said first and second electrodes comprise source and drain electrodes respectively. 6. The device of claim 4, wherein said first and second electrodes comprise source and drain electrodes respectively. 7. The device of claim 1, wherein said main gate stricture comprises a gate dielectric layer on said second III-Nitride layer and a conductive gate layer atop said dielectric layer. 8. The device of claim 6, wherein said main gate structure comprises a Schottky gate on said second III-Nitride layer. 9. The device of claim 1, wherein a bottom of said trench is contained within said substrate. 10. The device of claim 1, wherein a bottom of said trench is contained in said transition layer. 11. The device of claim 9, wherein said main gate structure comprises a gate dielectric layer on said second III-Nitride layer and a conductive gate layer atop said dielectric layer. 12. The device of claim 10, wherein said main gate structure comprises a gate dielectric layer on said second III-Nitride layer and a conductive gate layer atop said dielectric layer. 13. The device of claim 1, which further includes a field plate structure having a lateral position in alignment with a lateral position of at least a portion of the drift region between said main gate structure and said second electrode and beneath said 2 DEG layer; said field plate connected to the potential of said first electrode. 14. The device of claim 5, which further includes a field plate structure having a lateral position in alignment with a lateral position of at least a portion of the drift region between said main gate structure and said second electrode and beneath said 2 DEG layer; said field plate connected to the potential of said source. 15. The device of claim 7, which further includes a field plate structure having a lateral position in alignment with a lateral position of at least a portion of the drift region between said main gate structure and said second electrode and beneath said 2 DEG layer; said field plate connected to the potential of said first electrode. 16. The device of claim 13, wherein said field plate comprises a dielectric layer and a conductive layer atop said field plate dielectric layer. 17. The device of claim 13, which further includes a second trench in the bottom of said substrate and having a given depth; said field plate structure disposed at the bottom of said second trench. 18. The device of claim 17, wherein said field plate comprises a dielectric layer and a conductive layer atop said field plate dielectric layer. 19. A III-Nitride device comprising a substrate; a first III-nitride layer supported by said substrate;a second III-Nitride layer atop said first III-Nitride layer and creating a 2 DEG conducting layer at the interface of said first and second III-Nitride layers;first and second spaced main electrodes connected to said second III-Nitride layers;a main gate structure connected to said second III-Nitride layer and disposed between said first and second main electrodes and adapted to adjustably change the conductivity of said 2 DEG layer beneath said main gate structure in response to a predetermined signal on said main gate structure; anda field plate structure having a lateral position in alignment with a lateral position of at least a portion of the drift region between said main gate structure and said second electrode and beneath said 2 DEG layer;said field plate structure not laterally extending beyond said drift region; andsaid field plate structure electrically connected to a potential of said first main electrode. 20. The device of claim 19, which further includes a transition layer disposed between said substrate and said first III-Nitride layer. 21. The device of claim 19, wherein said first and second III-Nitride layers comprise a GaN layer and an AlGaN layer respectively. 22. The device of claim 19, wherein said field plate comprises a dielectric layer beneath said 2 DEG layer and a conductive layer underneath said dielectric layer. 23. The device of claim 19, which further includes a trench in the bottom of said substrate and having a given depth; said field plate structure disposed at the bottom of said trench. 24. The device of claim 23, wherein said trench bottom is disposed within said substrate. 25. The device of claim 23, wherein the bottom of said trench is disposed in said transition layer.