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Rectified switching of two-terminal memory via real time filament formation

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-047/00
  • H01L-045/00
출원번호 US-0756518 (2013-01-31)
등록번호 US-9112145 (2015-08-18)
발명자 / 주소
  • Lu, Wei
  • Jo, Sung Hyun
출원인 / 주소
  • Crossbar, Inc.
대리인 / 주소
    Amin, Turocy & Watson, LLP
인용정보 피인용 횟수 : 0  인용 특허 : 122

초록

Providing for rectified-switching of a two-terminal solid state memory cell is described herein. By way of example, the subject disclosure provides a solid state device exhibiting rectified resistive switching characteristics that can be fabricated with semiconductor fabrication techniques. The soli

대표청구항

1. A solid state memory cell, comprising: a first electrical conductor that forms a layer of the solid state memory cell;an electrically resistive diffusive medium that forms a second layer of the solid state memory cell; anda second electrical conductor that forms a third layer of the solid state m

이 특허에 인용된 특허 (122)

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