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Electronic apparatus and methods of forming the electronic apparatus include a gallium lanthanide oxide film for use in a variety of electronic systems. The gallium lanthanide oxide film may be structured as one or more monolayers. The gallium lanthanide oxide film may be formed using atomic layer d

Electronic apparatus and methods of forming the electronic apparatus include a gallium lanthanide oxide film for use in a variety of electronic systems. The gallium lanthanide oxide film may be structured as one or more monolayers. The gallium lanthanide oxide film may be formed using atomic layer deposition.

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1. An electronic device comprising: a substrate;a dielectric layer in an integrated circuit on the substrate, the dielectric layer containing a number of oxide films, including a gallium lanthanide oxide film, and a lanthanide oxide film, and an insulating metal oxide layer whose metal is different

1. An electronic device comprising: a substrate;a dielectric layer in an integrated circuit on the substrate, the dielectric layer containing a number of oxide films, including a gallium lanthanide oxide film, and a lanthanide oxide film, and an insulating metal oxide layer whose metal is different from lanthanides and gallium, the number of oxide films structured as monolayers; anda silicon oxide interface layer between the substrate and the dielectric layer. 2. The electronic device of claim 1, wherein the dielectric layer is disposed on a silicon germanium layer. 3. The electronic device of claim 2, wherein the silicon germanium layer includes a strained Si0.74Ge0.26 layer. 4. The electronic device of claim 1, wherein the dielectric layer is disposed on a silicon germanium layer with a silicon layer separating the dielectric layer from the silicon germanium layer. 5. The electronic device of claim 1, wherein the gallium lanthanide oxide film includes GaOx(LnOy) layer. 6. The electronic device of claim 1, wherein the gallium lanthanide oxide film includes a Ga2O3(Gd2O3) layer. 7. The electronic device of claim 1, wherein the gallium lanthanide oxide film includes a Gd3Ga5O12 layer. 8. The electronic device of claim 1, wherein the gallium lanthanide oxide film includes a composite of gallium, gadolinium, and oxygen. 9. The electronic device of claim 1, wherein the gallium lanthanide oxide film includes the gallium lanthanide oxide film in a nanolaminate. 10. The electronic device of claim 1, wherein the electronic device includes a transistor having the dielectric layer as a gate insulator of the transistor. 11. The electronic device of claim 1, wherein the electronic device includes a silicon CMOS transistor having the dielectric layer as a gate insulator. 12. The electronic device of claim 1, wherein the electronic device includes a silicon germanium CMOS transistor having the dielectric layer as a gate insulator. 13. The electronic device of claim 1, wherein the electronic device includes a floating gate transistor having the dielectric layer as a floating gate insulator of the floating gate transistor. 14. The electronic device of claim 1, wherein the electronic device includes a memory having the dielectric layer configured as a nanolaminate in the memory. 15. The electronic device of claim 1, wherein the electronic device includes a conductive path to a conductive layer on and contacting the dielectric layer to provide a signal to the conductive layer to operate in an electronic system. 16. An electronic device comprising: a source region and a drain region, separated by a channel;a gate located over the channel;a dielectric between the channel and the gate, the dielectric containing a number of oxide films, including a gallium lanthanide oxide film, and a lanthanide oxide film, and an insulating metal oxide layer whose metal is different from lanthanides and gallium, the number of oxide films structured as monolayers; anda silicon oxide interface layer between the channel and the dielectric layer. 17. The electronic device of claim 16, wherein the channel includes epitaxial strained SiGe. 18. The electronic device of claim 16, wherein the channel includes epitaxial SiGe formed over a substrate. 19. The electronic device of claim 18, wherein the channel includes epitaxial silicon formed over the epitaxial SiGe. 20. The electronic device of claim 19, wherein the epitaxial silicon is less than half a thickness the epitaxial SiGe. 21. The electronic device of claim 20, further including an interfacial oxide between the epitaxial SiGe and the dielectric. 22. The electronic device of claim 16, wherein the channel is a p-type channel. 23. The electronic device of claim 16, wherein the channel is an n-type channel. 24. An electronic device comprising: a source region and a drain region, separated by a channel;a floating gate located over the channel;a dielectric layer between the channel region and the floating gate, the dielectric layer containing a number of oxide films, including a gallium lanthanide oxide film, and a lanthanide oxide film, and an insulating metal oxide layer whose metal is different from lanthanides and gallium, the number of oxide films structured as monolayers;a silicon oxide interface layer between the channel region and the dielectric layer;a control gate; anda floating gate dielectric between the control gate and the floating gate. 25. The electronic device of claim 24, wherein the channel is a silicon channel. 26. The electronic device of claim 24, wherein the channel is a SiGe channel. 27. The electronic device of claim 24, wherein the channel includes epitaxial strained SiGe.