|국가/구분||United States(US) Patent 등록|
|우선권정보||TW-101100736 A (2012-01-06)|
|발명자 / 주소|
|출원인 / 주소|
|대리인 / 주소||
|인용정보||피인용 횟수 : 0 인용 특허 : 9|
The present invention is directed to a light-emitting diode (LED) device, which includes at least one LED unit. Each LED unit includes at least one LED, which includes a first doped layer, a second doped layer and a conductive defect layer. The conductive defect layer is formed on the first or second doped layer. The conductive defect layer may be deposited between two LEDs, or between the first/second doped layer and an electrode.
1. A light-emitting diode (LED) device, including one or more LED units, each of said one or more LED units comprising: a first LED and a second LED; anda conductive defect layer deposited between said first LED and said second LED, said conductive defect layer acting as a tunnel junction to stack said first LED and said second LED;wherein said conductive defect layer comprises a metal based compound, said metal based compound is non-stoichiometric, with excess metal element. 2. The LED device of claim 1, wherein said first LED and/or said second LED com...