Photodetector and image sensor including the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-027/14
H01L-027/146
H01L-031/0232
H01L-031/09
H04N-005/33
H04N-005/3745
출원번호
US-0092257
(2013-11-27)
등록번호
US-9142577
(2015-09-22)
우선권정보
KR-10-2012-0143715 (2012-12-11)
발명자
/ 주소
Lee, HyunSeok
Jung, Jung-Kyu
Park, Yoondong
Lee, Taeyon
출원인 / 주소
SAMSUNG ELECTRONICS CO., LTD.
대리인 / 주소
Lee & Morse, P.C.
인용정보
피인용 횟수 :
1인용 특허 :
9
초록▼
A photodetector may have a structure including conductive patterns and an intermediate layer interposed between the conductive patterns. A length L of at least one side of the second conductive pattern that overlaps the first conductive pattern and the intermediate layer satisfies the equation L=λ/2
A photodetector may have a structure including conductive patterns and an intermediate layer interposed between the conductive patterns. A length L of at least one side of the second conductive pattern that overlaps the first conductive pattern and the intermediate layer satisfies the equation L=λ/2neff, wherein the neff is an effective refractive index of a surface plasmon waveguide formed of the first conductive pattern, the intermediate layer, and the second conductive pattern during a surface plasmon resonance. Heat generated in the intermediate layer when the electromagnetic wave having the wavelength λ is incident thereon generates a current variation.
대표청구항▼
1. A photodetector, comprising: a first conductive pattern and a second conductive pattern sequentially stacked;an intermediate layer interposed between the first conductive pattern and the second conductive pattern, the intermediate layer detecting an electromagnetic wave having a wavelength λ inci
1. A photodetector, comprising: a first conductive pattern and a second conductive pattern sequentially stacked;an intermediate layer interposed between the first conductive pattern and the second conductive pattern, the intermediate layer detecting an electromagnetic wave having a wavelength λ incident thereon;a source electrode and a drain electrode adjacent to both sides of the intermediate layer, respectively, and spaced apart from the first and second conductive patterns; anda gate insulation film interposed between the first conductive pattern and the intermediate layer or between the second conductive pattern and the intermediate layer,wherein a length L of at least one side of the second conductive pattern that overlaps the first conductive pattern and the intermediate layer satisfies equation 1, L=λ/2neff (1)wherein the neff is an effective refractive index of a surface plasmon waveguide formed of the first conductive pattern, the intermediate layer, and the second conductive pattern during a surface plasmon resonance, andwherein heat generated in the intermediate layer by the electromagnetic wave through a surface plasmon focusing phenomenon causes a variation in the intermediate layer such that a varied current is detected. 2. The photodetector as claimed in claim 1, wherein the intermediate layer is one of silicon, germanium, poly silicon, poly germanium, amorphous silicon, amorphous germanium, silicon oxide, silicon nitride, silicon oxide nitride, and an amorphous or crystalline phase change film including a Chalcogenide element. 3. The photodetector as claimed in claim 1, wherein a real value of a dielectric constant of the first and second conductive patterns at the wavelength λ of the electromagnetic wave is a negative number. 4. The photodetector as claimed in claim 3, wherein the first and second conductive patterns are formed of at least one of gold, aluminum, silver, tungsten, copper, impurity-doped silicon, metal silicide, and crystalline alloy including a Chalcogenide element. 5. The photodetector as claimed in claim 1, further comprising: a substrate including a unit pixel area formed of a plurality of sub pixel areas,wherein the first conductive pattern, the intermediate layer, and the second conductive pattern are disposed at each of the sub pixel areas, andwherein a first length L1 of a first side and a first wavelength λ1 of the electromagnetic wave associated with a first sub pixel area are different from a second length L2 of a second side and a second wavelength λ2 of the electromagnetic wave associated with a second sub pixel area. 6. The photodetector as claimed in claim 5, wherein the first conductive pattern of the first sub pixel area is connected with the first conductive pattern of a second sub pixel area. 7. The photodetector as claimed in claim 5, wherein the first conductive pattern is common to all sub pixel areas. 8. The photodetector as claimed in claim 1, wherein the length L is shorter than the wavelength λ. 9. The photodetector as claimed in claim 1, wherein the electromagnetic wave is wave-guided along a surface between the first conductive pattern overlapping with the second conductive pattern and the intermediate layer and a surface between the second conductive pattern overlapping with the first conductive pattern and the intermediate layer by a surface plasmon phenomenon. 10. The photodetector as claimed in claim 1, wherein the variation in the intermediate layer is in electric resistance, conductivity, dielectric constant, or charge mobility. 11. The photodetector as claimed in claim 1, wherein the second conductive pattern is a polygonal where the second conductive pattern overlaps the first conductive layer and the intermediate layer. 12. The photodetector as claimed in claim 1, wherein the second conductive pattern is circular where the second conductive pattern overlaps the first conductive pattern and the intermediate layer. 13. The photodetector as claimed in claim 1, wherein the wavelength λ is a first wavelength λ1 to be detected, the second conductive pattern having another side that overlaps the first conductive pattern and the intermediate layer that has a second length L2 satisfying equation 1 for a second wavelength λ2 to be detected. 14. An image sensor, comprising: a photodetector in claim 1; anda reset transistor, a source follower transistor, a selection transistor and a transfer transistor electrically connected with the photodetector to transfer the varied current. 15. The image sensor as claimed in claim 14, further comprising: a micro lens disposed on the photodetector. 16. The image sensor as claimed in claim 14, wherein no color filter is between the micro lens and the photodetector. 17. A photodetector, comprising: a first conductive pattern;an intermediate layer on the first conductive pattern, the intermediate layer detecting an electromagnetic wave having a wavelength λ incident thereon;a second conductive pattern on the intermediate layer, the second conductive pattern covering a smaller surface area than the first conductive pattern and the intermediate layer;a source electrode and a drain electrode adjacent to both sides of the intermediate layer, respectively, and spaced apart from the first and second conductive patterns; anda gate insulation film interposed between the first conductive pattern and the intermediate layer or between the second conductive pattern and the intermediate layer,wherein a length L of at least one side of the second conductive pattern that overlaps the first conductive pattern and the intermediate layer satisfies equation 1, L=λ/2neff (1)wherein the neff is an effective refractive index of a surface plasmon waveguide formed of the first conductive pattern, the intermediate layer, and the second conductive pattern during a surface plasmon resonance, andwherein heat generated in the intermediate layer, when the electromagnetic wave having the wavelength λ is incident thereon, generates a current variation. 18. The photodetector as claimed in claim 17, wherein the wavelength λ is a first wavelength λ1 in a range of electromagnetic wavelengths to be detected, the second conductive pattern having another side having a second length L2 satisfying equation 1 for a second wavelength λ2 in the range of electromagnetic wavelengths to be detected.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (9)
Busta Heinz Hermann ; Amantea Robert, Direct view infrared MEMS structure.
Park, Yoon-dong; Miller, David Andrew Barclay; Jin, Young-gu; Joe, In-sung, Near-infrared photodetectors, image sensors employing the same, and methods of manufacturing the same.
Park, Young Sam; Jang, Moon Gyu; Hyun, Younghoon; Jun, Myungsim; Cheon, Sang Hoon; Zyung, Taehyoung, Thermoelectric device and method of forming the same, temperature sensing sensor, and heat-source image sensor using the same.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.