$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Wafer support system and method for separating support substrate from solid-phase bonded wafer and method for manufacturing semiconductor device

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/30
  • H01L-021/762
  • H01L-021/18
  • H01L-021/78
  • H01L-029/66
  • H01L-021/84
  • H01L-021/683
출원번호 US-0249480 (2014-04-10)
등록번호 US-9147599 (2015-09-29)
우선권정보 JP-2011-228545 (2011-10-18)
발명자 / 주소
  • Nakajima, Tsunehiro
출원인 / 주소
  • FUJI ELECTRIC CO., LTD.
대리인 / 주소
    Rossi, Kimms & McDowell LLP
인용정보 피인용 횟수 : 1  인용 특허 : 26

초록

A method is disclosed for separating a support substrate from a solid-phase bonded wafer which includes a Si wafer and support substrate solid-phase bonded to back surface of the Si wafer. The method includes a step of irradiating the Si wafer with laser light with a wavelength which passes through

대표청구항

1. A method for separating a support substrate from a solid-phase bonded wafer which includes a Si wafer and the support substrate solid-phase bonded to a back surface of the Si wafer, the method comprising at least: a breaking layer forming step of irradiating the Si wafer with laser light which us

이 특허에 인용된 특허 (26)

  1. Inada, Teiichi; Mashino, Michio; Uruno, Michio, Adhesive sheet, dicing tape integrated type adhesive sheet, and method of producing semiconductor device.
  2. Chen, Haur-Ywh; Chan, Yi-Ling; Yang, Kuo-Nan; Yang, Fu-Liang; Hu, Chenming, Bonded SOI wafer with <100> device layer and <110> substrate for performance improvement.
  3. Inada, Teiichi; Mashino, Michio; Uruno, Michio, Dicing tape laminated with adhesive sheet of polymer, epoxy resin and filler.
  4. Inada, Teiichi; Mashino, Michio; Uruno, Michio, Dicing tape laminated with adhesive sheet of polymer, thermosetting resin and filler.
  5. Tomita,Shinichi; Yoshimaru,Kouji, Laminated substrate, method of manufacturing the substrate, and wafer outer periphery pressing jigs used for the method.
  6. Jakob,Andreas; Vissing,Klaus D.; Stenzel,Volkmar, Method and device for machining a wafer, in addition to a wafer comprising a separation layer and a support layer.
  7. Akiyama, Shoji; Ito, Atsuo, Method for fabricating SOI substrate.
  8. Usenko,Alexander Yuri, Method for forming a fragile layer inside of a single crystalline substrate preferably for making silicon-on-insulator wafers.
  9. Chang,Chich Shang; Lee,Chi Shen; Huang,Shun Fa; Chang,Jung Fang; Hu,Wen Chih; Wang,Liang Tang; Sheu,Chai Yuan, Method for forming a single-crystal silicon layer on a transparent substrate.
  10. Aspar, Bernard; Bruel, Michel; Moriceau, Hubert, Method for making a thin film using pressurization.
  11. Yamazaki, Shunpei; Ohnuma, Hideto; Iikubo, Yoichi; Yamamoto, Yoshiaki; Makino, Kenichiro, Method for manufacturing SOI substrate and semiconductor device.
  12. Kawai, Makoto; Kubota, Yoshihiro; Ito, Atsuo; Tanaka, Kouichi; Tobisaka, Yuji; Akiyama, Shoji; Tamura, Hiroshi, Method for producing SOI substrate.
  13. Jacquemin, Jean Philippe, Method of adhesion measurement at the interface between layers.
  14. Park, Jea-Gun; Lee, Gon-Sub; Lee, Sang-Hee, Method of fabricating nano SOI wafer and nano SOI wafer fabricated by the same.
  15. Adachi, Kazumasa; Takada, Motoo; Ono, Kozo, Method of manufacturing optical component and optical component.
  16. Cherekdjian, Sarko; Cites, Jeffrey Scott; Couillard, James Gregory; Maschmeyer, Richard Orr; Moore, Michael John; Usenko, Alex, Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation.
  17. Cherekdjian, Sarko; Cites, Jeffrey Scott; Couillard, James Gregory; Maschmeyer, Richard Orr; Moore, Michael John; Usenko, Alex, Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation.
  18. Tolchinsky, Peter; Yablok, Irwin; Hu, Chuan; Emery, Richard D., Methods and apparatuses for manufacturing ultra thin device layers for integrated circuit devices.
  19. Tolchinsky,Peter; Yablok,Irwin; Hu,Chuan; Emery,Richard D., Methods and apparatuses for manufacturing ultra thin device layers for integrated circuit devices.
  20. Usenko,Alexander, Process for forming a fragile layer inside of a single crystalline substrate.
  21. Ottaviani, Giampiero; Corni, Federico; Ferrari, Paolo; Villa, Flavio Francesco, Process for manufacturing wafers usable in the semiconductor industry.
  22. Cheng, Zhi-Yuan; Fitzgerald, Eugene A.; Antoniadis, Dimitri A.; Hoyt, Judy L., Process for producing semiconductor article using graded epitaxial growth.
  23. Tatsuya Shimoda JP; Satoshi Inoue JP; Wakao Miyazawa JP, Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method.
  24. Alexander Yuri Usenko ; William Ned Carr, Separation process for silicon-on-insulator wafer fabrication.
  25. Henley,Francois J.; Ong,Philip James; Malik,Igor J.; Kirk,Harry R., System for forming a strained layer of semiconductor material.
  26. Shimoda, Tatsuya; Inoue, Satoshi, Three-dimensional device.

이 특허를 인용한 특허 (1)

  1. Takeda, Noboru; Morikazu, Hiroshi, Wafer processing method.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트